APTGT400U120D4G
Single switch
Trench + Field Stop IGBT3
Power Module
1
V
CES
= 1200V
I
C
= 400A @ Tc = 80°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Trench + Field Stop IGBT3 Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
M6 connectors for power
M4 connectors for signal
High level of integration
3
5
2
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive T
C
of V
CEsat
RoHS Compliant
Absolute maximum ratings
Symbol
V
CES
I
C
I
CM
V
GE
P
D
RBSOA
Parameter
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
j
= 125°C
Max ratings
1200
650
400
800
±20
1785
800A@1050V
Unit
V
A
V
W
APTGT400U120D4G – Rev 3 October, 2012
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
www.microsemi.com
1-6
APTGT400U120D4G
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
I
CES
V
CE(sat)
V
GE(th)
I
GES
Zero Gate Voltage Collector Current
Collector Emitter saturation Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
V
GE
= 0V, V
CE
= 1200V
T
j
= 25°C
V
GE
= 15V
I
C
= 400A
T
j
= 125°C
V
GE
= V
CE
, I
C
= 12mA
V
GE
= 20V, V
CE
= 0V
Min
1.4
5.0
Typ
1.7
2.0
5.8
Max
750
2.1
6.5
600
Unit
µA
V
V
nA
Dynamic Characteristics
Symbol
C
ies
C
oes
C
res
Q
G
T
d(on)
T
r
T
d(off)
T
f
T
d(on)
T
r
T
d(off)
T
f
E
on
E
off
I
sc
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn on Energy
Turn off Energy
Short Circuit data
Test Conditions
V
GE
= 0V
V
CE
= 25V
f = 1MHz
V
GE
=±15V, I
C
=400A
V
CE
=600V
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 400A
R
G
= 1.8
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 400A
R
G
= 1.8
V
GE
= ±15V
T
j
= 125°C
V
Bus
= 600V
I
C
= 400A
T
j
= 125°C
R
G
= 1.8
V
GE
≤15V
; V
Bus
= 900V
t
p
≤
10µs ; T
j
= 125°C
Min
Typ
28
1.6
1.2
3.7
280
90
550
130
300
100
650
180
33
mJ
59
1600
A
ns
Max
Unit
nF
µC
ns
Reverse diode ratings and characteristics
Symbol Characteristic
V
RRM
Maximum Peak Repetitive Reverse Voltage
I
RRM
I
F
V
F
t
rr
Q
rr
E
rr
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
I
F
= 400A
V
R
= 600V
I
F
= 400A
V
GE
= 0V
Test Conditions
V
R
=1200V
T
j
= 25°C
T
j
= 125°C
Tc = 80°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
Min
1200
Typ
Max
750
1000
400
1.6
1.6
250
350
40
75
18
34
2.1
Unit
V
µA
A
V
ns
µC
mJ
APTGT400U120D4G – Rev 3 October, 2012
di/dt =4000A/µs
www.microsemi.com
2-6
APTGT400U120D4G
Thermal and package characteristics
Symbol Characteristic
R
thJC
V
ISOL
T
J
T
STG
T
C
Torque
Wt
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Min
IGBT
Diode
4000
-40
-40
-40
3
1
Typ
Max
0.07
0.13
150
125
125
5
2
350
Unit
°C/W
V
°C
N.m
g
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
M6
M4
D4 Package outline
(dimensions in mm)
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3-6
APTGT400U120D4G – Rev 3 October, 2012
APTGT400U120D4G
Typical Performance Curve
Output Characteristics (V
GE
=15V)
Output Characteristics
800
T
J
= 125°C
V
GE
=17V
V
GE
=13V
V
GE
=15V
800
T
J
=25°C
T
J
=125°C
600
I
C
(A)
600
I
C
(A)
400
400
V
GE
=9V
200
200
0
0
1
2
V
CE
(V)
3
4
0
0
1
2
V
CE
(V)
Energy losses vs Collector Current
140
T
J
=25°C
3
4
800
Transfert Characteristics
120
T
J
=125°C
600
I
C
(A)
100
E (mJ)
80
60
40
20
V
CE
= 600V
V
GE
= 15V
R
G
= 1.8
Ω
T
J
= 125°C
Eoff
Eon
400
Er
200
T
J
=125°C
Eon
0
5
6
7
8
9
10
11
12
V
GE
(V)
Switching Energy Losses vs Gate Resistance
200
175
150
E (mJ)
125
100
75
50
25
0
0
2
4
6
8
10
12
Gate Resistance (ohms)
14
Er
V
CE
= 600V
V
GE
=15V
I
C
= 400A
T
J
= 125°C
0
0
100 200 300 400 500 600 700 800
I
C
(A)
Reverse Bias Safe Operating Area
1000
Eon
800
I
C
(A)
600
400
200
0
0
400
800
V
CE
(V)
1200
1600
Eoff
Eoff
V
GE
=15V
T
J
=125°C
R
G
=1.8
Ω
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.08
Thermal Impedance (°C/W)
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.9
0.7
0.5
0.3
0.1
0.05
0.0001
0.001
Single Pulse
0.01
0.1
1
10
IGBT
0
0.00001
rectangular Pulse Duration (Seconds)
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4-6
APTGT400U120D4G – Rev 3 October, 2012
APTGT400U120D4G
Operating Frequency vs Collector Current
Fmax, Operating Frequency (kHz)
50
40
30
20
10
0
0
100
200
300
I
C
(A)
400
500
Hard
switching
ZVS
ZCS
V
CE
=600V
D=50%
R
G
=1.8
Ω
T
J
=125°C
Tc=75°C
Forward Characteristic of diode
800
T
J
=25°C
600
I
F
(A)
400
200
T
J
=125°C
T
J
=25°C
0
0
0.4
0.8
1.2
V
F
(V)
1.6
2
2.4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.15
Thermal Impedance (°C/W)
Diode
0.125
0.1
0.075
0.05
0.025
0.9
0.7
0.5
0.3
0.1
0.05
0
0.00001
0.0001
0.001
Single Pulse
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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5-6
APTGT400U120D4G – Rev 3 October, 2012
