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B772B

Small Signal Bipolar Transistor, 30V V(BR)CEO, 1-Element, PNP, Silicon, DIE-2

器件类别:分立半导体    晶体管   

厂商名称:BCD Semi(Diodes)

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器件参数
参数名称
属性值
零件包装代码
DIE
包装说明
UNCASED CHIP, S-XUUC-N2
针数
2
Reach Compliance Code
compliant
ECCN代码
EAR99
集电极-发射极最大电压
30 V
配置
SINGLE
最小直流电流增益 (hFE)
100
JESD-30 代码
S-XUUC-N2
元件数量
1
端子数量
2
封装主体材料
UNSPECIFIED
封装形状
SQUARE
封装形式
UNCASED CHIP
极性/信道类型
PNP
表面贴装
YES
端子形式
NO LEAD
端子位置
UPPER
晶体管应用
SWITCHING
晶体管元件材料
SILICON
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B772B
B772B Silicon PNP Epitaxial Transistor
Description :The B772B is designed for use in output stage of 1w audio amplifier,
voltage regulator, DC-DC converter and relay driver.
Features:
●Excellent
h
FE
Linearity
●Complementary
to D882B
Chip Appearance
Chip Size
Chip Thickness
Bonding Pad Size
Front Metal
Backside Metal
Scribe line width
Wafer Size
Base
1100um×1100um
210±20um
240um×240um
Emitter 330um×260um
Al
Au/TiNiAg
60um
6 inch
Electrical Characteristics( Ta=25℃)
Characteristic
Collector Cutoff Current
Emitter Cutoff Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector Saturation Voltage
Symbol
I
CBO
I
EBO
BV
CBO
BV
CEO
BV
EBO
h
FE
V
CE
(sat)
Test Condition
V
CB
=-35V, I
E
=0
V
EB
=-5V, I
C
=0
I
C
=-0.1mA
I
C
=-1mA
I
E
=-0.1mA
V
CE
=-2V, I
C
=-1A
I
C
=-2A, I
B
=-200mA
-40
-30
-5.0
100
400
-0.5
V
Min
Max
-0.1
-0.1
Unit
uA
uA
V
V
V
May.2004
Version :0.0
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