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BC32725TFR

Bipolar Transistors - BJT PNP Si Transistor Epitaxial

器件类别：分立半导体    晶体管   

厂商名称：Fairchild

厂商官网：http://www.fairchildsemi.com/

器件标准：

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器件参数
参数名称
属性值
Brand Name
Fairchild Semiconductor
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Fairchild
零件包装代码
TO-92
包装说明
CYLINDRICAL, O-PBCY-T3
针数
3
制造商包装代码
3 LD, TO92 MOLDED TO-5 STANDARD LD FORM ( JO5Z OPTION)
Reach Compliance Code
unknown
ECCN代码
EAR99
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Is Now Part of
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www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at
www.onsemi.com.
Please
email any questions regarding the system integration to
Fairchild_questions@onsemi.com.
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BC327 — PNP Epitaxial Silicon Transistor
October 2014
BC327
PNP Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications
• Suitable for AF-Driver Stages and Low-Power Output Stages
• Complement to BC337 / BC338
1
TO-92
1. Collector 2. Base 3. Emitter
Ordering Information
Part Number
BC327BU
BC32716BU
BC32716TA
BC32725BU
BC32725TA
BC32740BU
BC32740TA
Top Mark
BC327
BC32716
BC32716
BC32725
BC32725
BC32740
BC32740
Package
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
Packing Method
Bulk
Bulk
Ammo
Bulk
Ammo
Bulk
Ammo
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CES
V
CEO
V
EBO
I
C
T
J
T
STG
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Junction Temperature
Storage Temperature
Parameter
Value
-50
-45
-5
-800
150
-55 to 150
Unit
V
V
V
mA
°C
°C
© 2002 Fairchild Semiconductor Corporation
BC327 Rev. 1.1.0
www.fairchildsemi.com
BC327 — PNP Epitaxial Silicon Transistor
Thermal Characteristics
(1)
Values are at T
A
= 25°C unless otherwise noted.
Symbol
P
D
R
θJA
Power Dissipation
Derate Above 25°C
Parameter
Value
625
5.0
200
Unit
mW
mW/°C
°C/W
Thermal Resistance, Junction-to-Ambient
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol
BV
CEO
BV
CES
BV
EBO
I
CES
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
f
T
C
ob
Parameter
Conditions
Min.
-45
-50
-5
Typ.
Max.
Unit
V
V
V
Collector-Emitter Breakdown Voltage I
C
= -10 mA, I
B
= 0
Collector-Emitter Breakdown Voltage I
C
= -0.1 mA, V
BE
= 0
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
I
E
= -10
μA,
I
C
= 0
V
CE
= -45 V, I
B
= 0
V
CE
= -1 V, I
C
= -100 mA
V
CE
= -1 V, I
C
= -300 mA
I
C
= -500 mA, I
B
= -50 mA
V
CE
= -1 V, I
C
= -300 mA
V
CE
= -5 V, I
C
= -10 mA,
f = 20 MHz
V
CB
= -10 V, I
E
= 0,
f = 1 MHz
-2
100
60
-100
630
-0.7
-1.2
nA
V
V
MHz
pF
100
12
h
FE
Classification
Classification
h
FE1
h
FE2
16
100 ~ 250
60 ~
25
160 ~ 400
100 ~
40
250 ~ 630
170 ~
© 2002 Fairchild Semiconductor Corporation
BC327 Rev. 1.1.0
www.fairchildsemi.com
2
BC327 — PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
-500
-20
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
-400
-300
mA
- 5.0 A
I
B
= - 4.5m
I
B
= 4.0mA
-
A
I
B
= - 3.5m A
I
B
= - 3.0m A
I
B
= - 2.5m
mA
I
B
=
- 2.0
I
B
=
I
B
= -
I
B
=
-16
- 80
μ
A
I
B
=
- 70
μ
A
- 60
I
B
=
μ
A
- 50
P
T
I
B
=
-12
μ
A
μ
A
- 40
30
μ
A
=6
00
mW
A
1.5m
P
T
= 60
0mW
I
B
=
-8
-200
I
B
= -
I
B
= - 1.0mA
I
B
= - 0.5mA
I
B
= - 20
-4
μ
A
-100
I
B
= - 10
μ
A
I
B
= 0
-0
-1
-2
-3
-4
-5
-10
-20
-30
I
B
= 0
-40
-50
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. Static Characteristic
1000
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
-10
PULSE
V
CE
= - 2.0V
I
C
= 10 I
B
PULSE
V
CE
(sat)
h
FE
, DC CURRENT GAIN
100
-1
- 1.0V
10
-0.1
V
BE
(sat)
1
-0.1
-1
-10
-100
-1000
-0.01
-0.1
-1
-10
-100
-1000
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
-1000
1000
-100
-10
f
T
[MHz], GAIN-BANDWIDTH PRODUCT
I
C
[mA], COLLECTOR CURRENT
V
CE
= -1V
PULSE
V
CE
= -5.0V
100
-1
-0.1
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
10
-1
-10
-100
V
BE
[V], BASE-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 5. Base-Emitter On Voltage
Figure 6. Gain Bandwidth Product
© 2002 Fairchild Semiconductor Corporation
BC327 Rev. 1.1.0
www.fairchildsemi.com
3
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