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BC846G-A-AE3-R

SWITCHING AND AMPLIFIER APPLICATION

器件类别:分立半导体    晶体管   

厂商名称:UNISONIC TECHNOLOGIES CO.,LTD

厂商官网:http://www.unisonic.com.tw/

下载文档
器件参数
参数名称
属性值
厂商名称
UNISONIC TECHNOLOGIES CO.,LTD
包装说明
SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code
compli
最大集电极电流 (IC)
0.1 A
集电极-发射极最大电压
65 V
配置
SINGLE
最小直流电流增益 (hFE)
110
JESD-30 代码
R-PDSO-G3
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
极性/信道类型
NPN
表面贴装
YES
端子形式
GULL WING
端子位置
DUAL
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
300 MHz
文档预览
UNISONIC TECHNOLOGIES CO., LTD
BC846-BC850
SWITCHING AND AMPLIFIER
APPLICATION
FEATURES
* Suitable for automatic insertion in thick and thin-film circuits.
* Complement to BC856 … BC860
NPN SILICON TRANSISTOR
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
BC846L-x-AE3-R
BC846G-x-AE3-R
BC847L-x-AE3-R
BC847G-x-AE3-R
BC848L-x-AE3-R
BC848G-x-AE3-R
BC849L-x-AE3-R
BC849G-x-AE3-R
BC850L-x-AE3-R
BC850G-x-AE3-R
BC846L-x-AL3-R
BC846G-x-AL3-R
BC847L-x-AL3-R
BC847G-x-AL3-R
BC848L-x-AL3-R
BC848G-x-AL3-R
BC849L-x-AL3-R
BC849G-x-AL3-R
BC850L-x-AL3-R
BC850G-x-AL3-R
BC846L-x-AN3-R
BC846G-x-AN3-R
BC847L-x-AN3-R
BC847G-x-AN3-R
BC848L-x-AN3-R
BC848G-x-AN3-R
BC849L-x-AN3-R
BC849G-x-AN3-R
BC850L-x-AN3-R
BC850G-x-AN3-R
Package
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-323
SOT-323
SOT-323
SOT-323
SOT-323
SOT-523
SOT-523
SOT-523
SOT-523
SOT-523
Pin Assignment
1
2
3
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
Packing
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
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QW-R206-027,G
BC846-BC850
MARKING
BC846
BC847
BC848
NPN SILICON TRANSISTOR
BC849
BC850
X:
□:
Rank Code, refer to Classification of h
FE
L: Lead Free, G: Halogen Free
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R206-027,G
BC846-BC850
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(T
A
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VALUE
UNIT
BC846
80
V
Collector-Base Voltage
BC847 / BC850
V
CBO
50
V
BC848 / BC849
30
V
BC846
65
V
Collector-Emitter Voltage
BC847 / BC850
V
CEO
45
V
BC848 / BC849
30
V
BC846 / BC847
6
V
Emitter-Base Voltage
V
EBO
BC848 / BC849 / BC850
5
V
Collector Current (DC)
I
C
100
mA
SOT-23
310
mW
Collector Dissipation
SOT-323
P
D
200
mW
SOT-523
150
mW
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
PARAMETER
Collector Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Base Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Input Capacitance
BC846/BC847/BC848
BC849/BC850
Noise Figure
BC849
BC850
SYMBOL
TEST CONDITIONS
I
CBO
V
CB
=30V, I
E
=0
h
FE
V
CE
=5.0V, I
C
=2.0mA
I
C
=10mA, I
B
=0.5mA
V
CE(SAT)
I
C
=100mA,I
B
=5.0mA
I
C
=10mA, I
B
=0.5mA
V
BE(SAT)
I
C
=100mA,I
B
=5.0mA
V
CE
=5.0V, I
C
=2.0mA
V
BE(ON)
V
CE
=5.0V, I
C
=10mA
f
T
V
CE
=5.0V, I
C
=10mA, f=100MHz
C
OB
V
CB
=10V, I
E
=0, f=1.0MHz
C
IB
V
EB
=0.5V, I
C
=0, f=1.0MHz
V
CE
=5V, I
C
=200μA,
f=1KHz, R
G
=2KΩ
NF
V
CE
=5V, I
C
=200μA,
R
G
=2KΩ, f=30~15000Hz
MIN
110
90
200
700
900
660
300
3.5
9
2
1.2
1.4
1.4
TYP
MAX UNIT
15
nA
800
250
mV
600
mV
mV
mV
700
mV
720
mV
MHz
6
pF
pF
10
dB
4
dB
4
dB
3
dB
580
CLASSIFICATION OF h
FE
RANK
RANGE
A
110-220
B
200-450
C
420-800
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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BC846-BC850
TYPICAL CHARACTERISTICS
NPN SILICON TRANSISTOR
Collector Current , I
C
(mA)
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10000
I
C
=10I
B
1000
V
BE(SAT)
DC Current Gain, h
FE
Base-Emitter on Voltage
100
V
CE
=2V
10
100
V
CE(sat)
1
10
1
10
100
1000
0.1
0.1 0.2 0.4
0.6
0.8 1.0
1.2
Collector Current, I
C
(mA)
Base-Emitter Voltage, V
BE
(V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Current Gain-Bandwidth
Product, f
T
(MHz)
Capacitance, C
ob
(pF)
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BC846-BC850
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-027,G
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