UTC BC846/BC847/BC848/BC849/BC850
NPN EPITAXIAL SILICON TRANSISTOR
SWITCHING AND AMPLIFIER
APPLICATION
FEATURES
*Suitable for automatic insertion in thick and thin-film
circuits.
*Complement to BC856 … BC860
1
2
3
SOT-323
1: EMITTER
2: BASE
3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C, unless otherwise noted)
PARAMETER
Collector-Base Voltage
BC846
BC847 / BC850
BC848 / BC849
Collector-Emitter Voltage
BC846
BC847 / BC850
BC848 / BC849
Emitter-Base Voltage
BC846 / BC847
BC848 / BC849 / BC850
Collector Current (DC)
Collector Dissipation
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
RATINGS
80
50
30
65
45
30
6
5
100
200
150
-65 ~ +150
UNIT
V
V
CEO
V
V
EBO
Ic
Pc
Tj
T
stg
V
mA
mW
°C
°C
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R220-002,A
UTC BC846/BC847/BC848/BC849/BC850
NPN EPITAXIAL SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise noted)
PARAMETER
Collector Cut-Off Current
DC Current Gain
Collector-Emitter Saturation
Voltage
Collector-Base Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Input Capacitance
Noise Figure:
BC846/BC847/BC848
BC849/BC850
BC849
BC850
SYMBOL
I
CBO
h
FE
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
f
T
Cob
Cib
TEST CONDITIONS
V
CB
=30V, I
E
=0
V
CE
=5.0V, Ic=2.0mA
Ic=10mA, I
B
=0.5mA
Ic=100mA, I
B
=5.0mA
Ic=10mA, I
B
=0.5mA
Ic=100mA, I
B
=5.0mA
V
CE
=5.0V, Ic=2.0mA
V
CE
=5.0V, Ic=10mA
V
CE
=5.0V, Ic=10mA, f=100MHz
V
CB
=10V, I
E
=0, f=1.0MHz
V
EB
=0.5V, I
C
=0, f=1.0MHz
V
CE
=5V, Ic=200µA,
f=1KHz, R
G
=2KΩ
V
CE
=5V, I
C
=200µA,
R
G
=2KΩ, f=30 ~ 15000Hz
MIN
110
TYP
MAX
15
800
250
600
UNIT
nA
mV
mV
580
90
200
700
900
660
300
3.5
9
2
1.2
1.4
1.4
700
720
6
mV
MHz
pF
pF
NF
10
4
4
3
dB
Classification of h
FE
RANK
RANGE
A
110-220
B
200-450
C
420-800
Marking Code
P/N
BC846
BC847
BC848
BC849
BC850
RANK
A
A
A
A
A
MARK
8AA
8BA
8CA
8DA
8EA
RANK
B
B
B
B
B
MARK
8AB
8BB
8CB
8DB
8EB
RANK
C
C
C
C
C
MARK
8AC
8BC
8CC
8DC
8EC
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
QW-R220-002,A
UTC BC846/BC847/BC848/BC849/BC850
NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UTC
UNISONIC TECHNOLOGIES CO. LTD
3
QW-R220-002,A
UTC BC846/BC847/BC848/BC849/BC850
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO. LTD
4
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