型号
- 型号
- 关键词
Power Bipolar Transistor, 8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
厂商名称：SAMSUNG(三星)
厂商官网：http://www.samsung.com/Products/Semiconductor/
下载文档| 型号 | BDX54 | BDX54A | BDX54C |
|---|---|---|---|
| 描述 | Power Bipolar Transistor, 8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) |
| 零件包装代码 | SFM | SFM | SFM |
| 包装说明 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
| 针数 | 3 | 3 | 3 |
| Reach Compliance Code | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 |
| 最大集电极电流 (IC) | 8 A | 8 A | 8 A |
| 集电极-发射极最大电压 | 45 V | 60 V | 100 V |
| 配置 | DARLINGTON | DARLINGTON | DARLINGTON |
| 最小直流电流增益 (hFE) | 750 | 750 | 750 |
| JEDEC-95代码 | TO-220AB | TO-220AB | TO-220AB |
| JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
| JESD-609代码 | e0 | e0 | e0 |
| 元件数量 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 |
| 最高工作温度 | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| 极性/信道类型 | PNP | PNP | PNP |
| 最大功率耗散 (Abs) | 60 W | 60 W | 60 W |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | SINGLE | SINGLE | SINGLE |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON |
| 标称过渡频率 (fT) | 20 MHz | 20 MHz | 20 MHz |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | - |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | - |
