DISCRETE SEMICONDUCTORS
DATA SHEET
BLW86
HF/VHF power transistor
Product specification
August 1986
Philips Semiconductors
Product specification
HF/VHF power transistor
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
AB and B operated h.f. and v.h.f.
transmitters with a nominal supply
voltage of 28 V. The transistor is
resistance stabilized and is
guaranteed to withstand severe load
mismatch conditions. Matched
h
FE
groups are available on request.
It has a 3/8" flange envelope with a
ceramic cap. All leads are isolated
from the flange.
BLW86
QUICK REFERENCE DATA
R.F. performance up to T
h
= 25
°C
MODE OF
OPERATION
c.w. (class-B)
s.s.b. (class-AB)
s.s.b. (class-A)
V
CE
V
28
28
26
f
MHz
175
1,6
−
28
1,6
−
28
P
L
W
45
5−47,5 (P.E.P.)
17 (P.E.P.)
>
G
p
dB
7,5
>
−
typ. 19
typ. 22
η
%
70
typ. 45
z
i
Ω
−
−
Y
L
mS
−
−
d
3
dB
−
typ.
−30
typ.
−42
0,7
+
j1,3 110
−
j62
PIN CONFIGURATION
halfpage
PINNING - SOT123
PIN
1
DESCRIPTION
collector
emitter
base
emitter
1
4
c
handbook, halfpage
2
3
4
e
b
MBB012
2
3
MSB057
Fig.1 Simplified outline and symbol.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
HF/VHF power transistor
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (V
BE
= 0)
peak value
Collector-emitter voltage (open base)
Emitter-base voltage (open-collector)
Collector current (average)
Collector current (peak value); f
>
1 MHz
R.F. power dissipation (f
>
1 MHz); T
mb
= 25
°C
Storage temperature
Operating junction temperature
V
CESM
V
CEO
V
EBO
I
C(AV)
I
CM
P
rf
T
stg
T
j
max.
max.
max.
max.
max.
max.
max.
BLW86
65 V
36 V
4 V
4 A
12 A
105 W
200
°C
−65
to
+
150
°C
handbook, halfpage
10
MGP630
handbook, halfpage
150
MGP631
IC
(A)
Prf
(W)
100
ΙΙΙ
derate by 0.58 W/K
ΙΙ
0.43 W/K
Th = 70
°C
Tmb = 25
°C
50
Ι
1
10
VCE (V)
10
2
0
0
50
Th (°C)
100
I Continuous d.c. operation
II Continuous r.f. operation
III Short-time operation during mismatch
Fig.2 D.C. SOAR.
Fig.3 R.F. power dissipation; V
CE
≤
28 V; f
>
1 MHz.
THERMAL RESISTANCE
(dissipation = 45 W; T
mb
= 83,5
°C,
i.e. T
h
= 70
°C)
From junction to mounting base (d.c. dissipation)
From junction to mounting base (r.f. dissipation)
From mounting base to heatsink
R
th j-mb(dc)
R
th j-mb(rf)
R
th mb-h
=
=
=
2,65 K/W
1,95 K/W
0,3 K/W
August 1986
3
Philips Semiconductors
Product specification
HF/VHF power transistor
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified
Collector-emitter breakdown voltage
V
BE
= 0; I
C
= 25 mA
Collector-emitter breakdown voltage
open base; I
C
= 100 mA
Emitter-base breakdown voltage
open collector; I
E
= 10 mA
Collector cut-off current
V
BE
= 0; V
CE
= 36 V
Second breakdown energy; L = 25 mH; f = 50 Hz
open base
R
BE
= 10
Ω
D.C. current gain
(1)
I
C
= 2,5 A; V
CE
= 5 V
D.C. current gain ratio of matched devices
(1)
I
C
= 2,5 A; V
CE
= 5 V
Collector-emitter saturation voltage
(1)
I
C
= 7,5 A; I
B
= 1,5 A
Transition frequency at f = 100 MHz
(1)
−I
E
= 2,5 A; V
CB
= 28 V
−I
E
= 7,5 A; V
CB
= 28 V
Collector capacitance at f = 1 MHz
I
E
= I
e
= 0; V
CB
= 28 V
Feedback capacitance at f = 1 MHz
I
C
= 100 mA; V
CE
= 28 V
Collector-flange capacitance
Note
1. Measured under pulse
conditions: t
p
≤
200
µs; δ ≤
0,02.
handbook, halfpage
BLW86
V
(BR)CES
V
(BR)CEO
V
(BR)EBO
I
CES
E
SBO
E
SBR
>
>
>
<
>
>
typ.
65 V
36 V
4 V
10 mA
8 mJ
8 mJ
45
h
FE
10 to 80
<
typ.
typ.
typ.
typ.
typ.
typ.
1,2
1,5 V
570 MHz
570 MHz
82 pF
54 pF
2 pF
h
FE1
/h
FE2
V
CEsat
f
T
f
T
C
c
C
re
C
cf
4
MGP632
IC
(A)
2
Th = 70
°C
25
°C
Fig.4
Typical values;
V
CE
= 28 V.
0
0.5
1
VBE (V)
1.5
August 1986
4
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW86
MGP633
handbook, halfpage
100
handbook, halfpage
300
MGP634
Cc
(pF)
hFE
VCE = 28 V
200
50
5V
100
typ
0
0
5
10
IC (A)
15
0
0
20
VCB (V)
40
Fig.5 Typical values; T
j
= 25
°C.
Fig.6 I
E
= I
e
= 0; f = 1 MHz; T
j
= 25
°C.
handbook, full pagewidth
1000
MGP635
fT
(MHz)
VCB = 28 V
500
15 V
0
0
5
10
−I
E (A)
15
Fig.7 Typical values; f = 100 MHz; T
j
= 25
°C.
August 1986
5
