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BSS159

SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)

器件类别:分立半导体    晶体管   

厂商名称:SIEMENS

厂商官网:http://www.infineon.com/

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器件参数
参数名称
属性值
厂商名称
SIEMENS
零件包装代码
SOT-23
包装说明
SMALL OUTLINE, R-PDSO-G3
针数
3
Reach Compliance Code
unknow
ECCN代码
EAR99
配置
SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压
50 V
最大漏极电流 (ID)
0.16 A
最大漏源导通电阻
8 Ω
FET 技术
METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)
9 pF
JESD-30 代码
R-PDSO-G3
元件数量
1
端子数量
3
工作模式
DEPLETION MODE
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
极性/信道类型
N-CHANNEL
认证状态
Not Qualified
表面贴装
YES
端子形式
GULL WING
端子位置
DUAL
晶体管元件材料
SILICON
文档预览
BSS 159
Preliminary data
SIPMOS
®
Small-Signal Transistor
• N channel
• Depletion mode
• High dynamic resistance
Pin 1
G
Type
BSS 159
Pin 2
S
Pin 3
D
V
DS
50 V
I
D
0.16 A
R
DS(on)
8
Package
SOT-23
Ordering Code
Q67050-T6
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
Symbol
Values
50
50
Unit
V
V
DS
V
DGR
V
GS
V
gs
I
D
R
GS
= 20 kΩ
Gate source voltage
Gate-source peak voltage, aperiodic
Continuous drain current
±
14
±
20
A
0.16
T
A
= 25 °C
DC drain current, pulsed
I
Dpuls
0.48
T
A
= 25 °C
Power dissipation
P
tot
0.36
W
-55 ... + 150 °C
-55 ... + 150
350
285
T
A
= 25 °C
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air
Therminal resistance, chip-substrate - reverse side
1)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
T
j
T
stg
R
thJA
R
thJSR
K/W
E
55 / 150 / 56
1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm.
Semiconductor Group
1
May-30-1996
BSS 159
Preliminary data
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Static Characteristics
Drain-source breakdown voltage
Values
typ.
max.
Unit
V
(BR)DSV
V
50
-
-2.5
-
-
200
10
4
-
-1.5
µA
-
-
1
-
mA
70
-
nA
-
100
-
8
V
GS
= -10 V,
I
D
= 250 µA
Gate threshold voltage
V
GS(th)
-3
V
DS
= 3 V,
I
D
= 10 µA
Drain-source cutoff current
I
DSV
V
DS
= 50 V,
V
GS
= -10 V,
T
j
= 25 °C
V
DS
= 50 V,
V
GS
= -10 V,
T
j
= 125 °C
On-state drain current
I
D(on)
I
GSS
R
DS(on)
V
GS
= 0 V,
V
DS
= 10 V
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
Drain-Source on-resistance
V
GS
= 0 V,
I
D
= 0.07 A
Semiconductor Group
2
May-30-1996
BSS 159
Preliminary data
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Dynamic Characteristics
Transconductance
Values
typ.
max.
Unit
g
fs
0.1
0.16
70
15
6
-
S
pF
-
100
25
9
ns
-
7
11
V
DS
2
*
I
D *
R
DS(on)max,
I
D
= 0.16 A
Input capacitance
C
iss
C
oss
-
V
GS
= -4.5 V,
V
DS
= 25 V,
f
= 1 MHz
Output capacitance
V
GS
= -4.5 V,
V
DS
= 25 V,
f
= 1 MHz
Reverse transfer capacitance
C
rss
-
V
GS
= -4.5 V,
V
DS
= 25 V,
f
= 1 MHz
Turn-on delay time
t
d(on)
V
DD
= 30 V,
V
GS
= -5... + 5 V,
I
D
= 0.28 A
R
GS
= 50
Rise time
t
r
-
11
17
V
DD
= 30 V,
V
GS
= -5... + 5 V,
I
D
= 0.28 A
R
GS
= 50
Turn-off delay time
t
d(off)
-
13
17
V
DD
= 30 V,
V
GS
= -5... + 5 V,
I
D
= 0.28 A
R
GS
= 50
Fall time
t
f
-
14
19
V
DD
= 30 V,
V
GS
= -5... + 5 V,
I
D
= 0.28 A
R
GS
= 50
Semiconductor Group
3
May-30-1996
BSS 159
Preliminary data
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Reverse Diode
Inverse diode continuous forward current
I
S
T
A
= 25 °C
Inverse diode direct current,pulsed
A
-
-
-
-
0.8
0.1
0.3
V
-
1.3
Values
typ.
max.
Unit
I
SM
V
SD
T
A
= 25 °C
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 0.3 A
Semiconductor Group
4
May-30-1996
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参数对比
与BSS159相近的元器件有:Q67050-T6。描述及对比如下:
型号 BSS159 Q67050-T6
描述 SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance) SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)
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