Smart Low Side Power Switch
Power HITFET BTS 3142D
Features
·
Logic Level Input
·
Input Protection (ESD)
·
Thermal shutdown
•
Green product (RoHS compliant)
·
Overload protection
·
Short circuit protection
·
Overvoltage protection
·
Current limitation
·
Analog driving possible
Product Summary
Drain source voltage
On-state resistance
Nominal load current
Clamping energy
V
DS
R
DS(on)
I
D(Nom)
E
AS
42
28
4.6
3.5
V
mΩ
A
J
P / PG-TO252-3-11
Application
•
All kinds of resistive, inductive and capacitive loads in switching
or linear applications
•
μC compatible power switch for 12 V DC applications
•
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS
®
technology. Fully protected by embedded
protection functions.
V
bb
M
HITFET
®
Current
Limitation
In
Pin 1
Drain
Pin 2 and 4 (TAB)
Overvoltage-
Protection
Gate-Driving
Unit
ESD
Overload
Protection
Over-
temperature
Protection
Short circuit
Protection
Pin 3
Source
Datasheet
1
Rev. 1.4, 2013-03-07
Smart Low Side Power Switch
Power HITFET BTS 3142D
Maximum Ratings at T
j
= 25 °C, unless otherwise specified
1)
Parameter
Drain source voltage
Drain source voltage for short circuit protection
T
j
= -40 ... +150 °C
Continuous input current
-0.2V
≤
V
IN
≤
10V
V
IN
< -0.2V or
V
IN
> 10V
Operating temperature
Storage temperature
Power dissipation
4)
T
C
= 85 °C
6cm
2
cooling area ,
T
A
= 85 °C
Unclamped single pulse inductive energy
1)
Load dump protection
V
LoadDump2)
=
V
A
+
V
S
V
IN
= 0 and 10 V, t
d
= 400 ms,
R
I
= 2
Ω,
R
L
= 3
Ω,
V
A
= 13.5 V
Electrostatic discharge
voltage
(Human Body Model)
according to ANSI/ESDA/JEDEC JS-001
(1.5 kΩ, 100 pF)
V
ESD
2
kV
E
AS
V
LD
T
j
T
stg
P
tot
59
1.1
3.5
67.5
J
V
I
IN
no limit
|
I
IN
|
≤
2
-40 ... +150
-55 ... +150
W
°C
mA
Symbol
V
DS
V
DS(SC)
Value
42
28
Unit
V
Thermal resistance
junction - case:
SMD: junction - ambient
@ min. footprint
@ 6 cm
2
cooling area
3)
R
thJC
R
thJA
115
55
1.1
K/W
1 Not subject to production test, specified by design.
2
V
Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70μm thick) copper area for drain
connection. PCB mounted vertical without blown air.
4 Not subject to production test, calculated by R
/R
and maximum allowed junction temperature
thJA
thJC
Datasheet
2
Rev. 1.4, 2013-03-07
Smart Low Side Power Switch
Power HITFET BTS 3142D
Electrical Characteristics
Parameter
at
T
j
= 25 °C, unless otherwise specified
Characteristics
Drain source clamp voltage
T
j
= - 40 ... +150 °C,
I
D
= 10 mA
Off-state drain current
T
j
= -40 ... +150 °C
V
DS
= 32 V,
V
IN
= 0 V
Input threshold voltage
I
D
= 2.4 mA,
T
j
= 25 °C
I
D
= 2.4 mA,
T
j
= 150 °C
On state input current
On-state resistance
V
IN
= 5 V,
I
D
= 4.6 A,
T
j
= 25 °C
V
IN
= 5 V,
I
D
= 4.6 A,
T
j
= 150 °C
On-state resistance
V
IN
= 10 V,
I
D
= 4.6 A,
T
j
= 25 °C
V
IN
= 10 V,
I
D
= 4.6 A,
T
j
= 150 °C
Nominal load current
1)
T
j
< 150 °C,
V
IN
= 10 V,
T
A
= 85 °C, SMD
2)
Nominal load current
1)
V
IN
= 10 V,
V
DS
= 0.5 V,
T
C
= 85 °C,
T
j
< 150°C
Current limit (active if
V
DS
> 2.5 V)
3)
V
IN
= 10 V,
V
DS
= 12 V,
t
m
= 200 μs
1 Not subject to production test, calculated by R
2 @ 6 cm
2
3
cooling area
thJA
/R
thJC
Symbol
min.
V
DS(AZ)
I
DSS
V
IN(th)
1.3
0.8
I
IN(on)
R
DS(on)
-
-
R
DS(on)
-
-
I
D(Nom)
4.6
I
D(ISO)
I
D(lim)
and R
DS(on)
Values
typ.
-
1.5
max.
55
20
Unit
42
-
V
μA
V
1.7
-
10
27
54
23
46
-
-
45
2.2
-
30
34
68
28
56
A
-
-
55
μA
mΩ
-
12.6
30
Device switched on into existing short circuit (see diagram Determination of I
D(lim)
). If the device is in on condition
and a short circuit occurs, these values might be exceeded for max. 50 μs.
Datasheet
3
Rev. 1.4, 2013-03-07
Smart Low Side Power Switch
Power HITFET BTS 3142D
Electrical Characteristics
Parameter
at
T
j
= 25 °C, unless otherwise specified
Symbol
min.
Values
typ.
max.
Unit
Dynamic Characteristics
Turn-on time
Turn-off time
Slew rate on
Slew rate off
V
IN
to 90%
I
D
:
V
IN
to 10%
I
D
:
70 to 50%
V
bb
:
50 to 70%
V
bb
:
t
on
t
off
-dV
DS
/dt
on
dV
DS
/dt
off
-
-
-
-
60
60
0.3
0.3
120
120
1.5
1.5
μs
R
L
= 4.7
Ω,
V
IN
= 0 to 10 V,
V
bb
= 12 V
R
L
= 4.7
Ω,
V
IN
= 10 to 0 V,
V
bb
= 12 V
V/μs
R
L
= 4.7
Ω,
V
IN
= 0 to 10 V,
V
bb
= 12 V
R
L
= 4.7
Ω,
V
IN
= 10 to 0 V,
V
bb
= 12 V
Protection Functions
1)
Thermal overload trip temperature
Input current protection mode
Input current protection mode
T
j
= 150 °C
Unclamped single pulse inductive energy
2)
I
D
= 4.6 A,
T
j
= 25 °C,
V
bb
= 12 V
E
AS
3.5
-
-
J
T
jt
I
IN(Prot)
I
IN(Prot)
150
-
-
175
220
180
-
400
400
°C
μA
Inverse Diode
Inverse diode forward voltage
I
F
= 51 A,
t
m
= 250 μs,
V
IN
= 0 V,
t
P
= 300 μs
1Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
2 Not tested, specified by design.
V
SD
-
1.0
-
V
Datasheet
4
Rev. 1.4, 2013-03-07
Smart Low Side Power Switch
Power HITFET BTS 3142D
Block diagram
Terms
Inductive and overvoltage
output clamp
RL
V
I IN
1
IN
HITFET
S
VIN
3
2
D
ID
VDS
Vbb
Z
D
S
HITFET
Input circuit (ESD protection)
V
Gate Drive
Input
Short circuit behaviour
IN
I
IN
t
Source/
Ground
I
D
t
T
t
j
t
Datasheet
5
Rev. 1.4, 2013-03-07
