®
BUL128
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
s
s
s
s
s
STMicroelectronics PREFERRED
SALESTYPE
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
3
1
2
APPLICATIONS:
s
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
t ot
T
stg
T
j
Parameter
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Base Current
Base Peak Current (t
p
< 5 ms)
Total Dissipation at T
c
= 25 C
St orage Temperature
Max. Operating Junction Temperature
o
Value
700
400
9
4
8
2
4
70
-65 to 150
150
Uni t
V
V
V
A
A
A
A
W
o
o
C
C
November 2001
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BUL128
THERMAL DATA
R
t hj-ca se
R
t hj- amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
1.78
62.5
o
o
C/W
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symb ol
I
CES
V
EBO
Parameter
Collector Cut-off
Current (V
BE
= -1.5 V)
Emitter-Base Voltage
(I
C
= 0)
Test Cond ition s
V
CE
= 700 V
V
CE
= 700 V
I
E
= 10 mA
I
C
= 100 mA
L = 25 mH
T
j
= 125 C
9
400
o
Min.
Typ .
Max.
100
500
Un it
µA
µA
V
V
V
CEO(sus )
∗
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
CEO
V
CE(sat )
∗
Collector Cut-Off
Current (I
B
= 0)
Collector-Emitter
Saturation Voltage
V
CE
= 400 V
I
C
I
C
I
C
I
C
=
=
=
=
0.5 A
1 A
2.5 A
4 A
I
B
I
B
I
B
I
B
=
=
=
=
0.1 A
0.2 A
0.5 A
1 A
250
0.7
1
1.5
0.5
1.1
1.2
1.3
10
14
25
I
C
= 2 A
I
B2
= -0.4 A
(see fig.2)
I
B1
= 0.4 A
R
BB
= 0
Ω
(see fig.1)
1.5
0.2
0.6
0.1
28
40
3
0.4
1
0.2
µA
V
V
V
V
V
V
V
V
BE(s at)
∗
Base-Emitt er
Saturation Voltage
DC Current Gain
I
C
= 0.5 A
I
C
= 1 A
I
C
= 2.5 A
I
C
= 10 mA
I
C
= 2 A
Group A
Group B
V
CC
= 125 V
I
B1
= 0.4 A
T
p
= 30
µs
I
C
= 2 A
V
BE(of f)
= -5 V
V
c la mp
= 200 V
I
B
= 0.1 A
I
B
= 0.2 A
I
B
= 0.5 A
V
CE
= 5 V
V
CE
= 5 V
h
F E
∗
t
s
t
f
t
s
t
f
RESISTIVE LO AD
Storage Time
Fall Time
INDUCTIVE LO AD
Storage Time
Fall Time
µs
µs
µs
µs
∗
Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %
Note : Product is pre-selected in DC current gain (GROUP A and GROUP B). STMicroelectronics reserves the right to ship either groups
according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.
2/7
BUL128
Safe Operating Areas
Derating Curve
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
3/7
BUL128
Inductive Load Fall Time
Inductive Load Storage Time
Resistive Load Fall Time
Resistive Load Storage Time
Reverse Biased SOA
4/7
BUL128
Figure 1:
Inductive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
Figure 2:
Resistive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
5/7
