BUP 410D
IGBT With Antiparallel Diode
Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Including fast free-wheel diode
Pin 1
G
Type
BUP 410D
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
Symbol
Values
600
600
Unit
V
Pin 2
C
Ordering Code
Q67040-A4425-A2
Pin 3
E
V
CE
600V
I
C
13A
Package
TO-220 AB
V
CE
V
CGR
V
GE
I
C
R
GE
= 20 kΩ
Gate-emitter voltage
DC collector current
± 20
A
13
8
T
C
= 25 °C
T
C
= 90 °C
Pulsed collector current,
t
p
= 1 ms
I
Cpuls
26
16
T
C
= 25 °C
T
C
= 90 °C
Diode forward current
I
F
11
T
C
= 90 °C
Pulsed diode current,
t
p
= 1 ms
I
Fpuls
72
T
C
= 25 °C
Power dissipation
P
tot
50
W
-55 ... + 150
-55 ... + 150
°C
T
C
= 25 °C
Chip or operating temperature
Storage temperature
T
j
T
stg
Semiconductor Group
1
Dec-12-1996
BUP 410D
Maximum Ratings
Parameter
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Thermal Resistance
Thermal resistance, chip case
Diode thermal resistance, chip case
Symbol
-
-
Values
E
55 / 150 / 56
Unit
-
R
thJC
R
thJC
D
≤
2.5
3.1
K/W
Electrical Characteristics,
at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
min.
Static Characteristics
Gate threshold voltage
Values
typ.
max.
Unit
V
GE(th)
4.5
5.5
2.1
2.2
3
3.3
-
-
6.5
2.7
2.8
-
-
V
V
GE
=
V
CE,
I
C
= 0.35 mA,
T
j
= 25 °C
Collector-emitter saturation voltage
V
CE(sat)
-
-
-
-
V
GE
= 15 V,
I
C
= 6 A,
T
j
= 25 °C
V
GE
= 15 V,
I
C
= 6 A,
T
j
= 125 °C
V
GE
= 15 V,
I
C
= 12 A,
T
j
= 25 °C
V
GE
= 15 V,
I
C
= 12 A,
T
j
= 125 °C
Zero gate voltage collector current
I
CES
-
80
µA
nA
-
100
V
CE
= 600 V,
V
GE
= 0 V,
T
j
= 25 °C
Gate-emitter leakage current
I
GES
V
GE
= 25 V,
V
CE
= 0 V
Semiconductor Group
2
Dec-12-1996
BUP 410D
AC Characteristics
Transconductance
g
fs
2
-
320
40
25
-
S
pF
-
430
60
40
V
CE
= 20 V,
I
C
= 6 A
Input capacitance
C
iss
C
oss
-
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
Output capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
Reverse transfer capacitance
C
rss
-
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
Electrical Characteristics,
at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
min.
Switching Characteristics, Inductive Load at
T
j
= 125 °C
Turn-on delay time
Values
typ.
max.
Unit
t
d(on)
-
20
35
ns
V
CC
= 300 V,
V
GE
= 15 V,
I
C
= 6 A
R
Gon
= 100
Ω
Rise time
t
r
-
60
90
V
CC
= 300 V,
V
GE
= 15 V,
I
C
= 6 A
R
Gon
= 100
Ω
Turn-off delay time
t
d(off)
-
175
240
V
CC
= 300 V,
V
GE
= -15 V,
I
C
= 6 A
R
Goff
= 100
Ω
Fall time
t
f
-
160
220
V
CC
= 300 V,
V
GE
= -15 V,
I
C
= 6 A
R
Goff
= 100
Ω
Semiconductor Group
3
Dec-12-1996
BUP 410D
Free-Wheel Diode
Diode forward voltage
V
F
-
1.65
-
V
ns
-
-
-
-
60
100
-
100
150
µC
I
F
= 10 A,
V
GE
= 0 V,
T
j
= 25 °C
Reverse recovery time
t
rr
I
F
= 10 A,
V
R
= -300 V,
V
GE
= 0 V
di
F
/dt = -100 A/µs
T
j
= 25 °C
T
j
= 125 °C
Reverse recovery charge
Q
rr
I
F
= 10 A,
V
R
= -300 V,
V
GE
= 0 V
di
F
/dt = -100 A/µs
T
j
= 25 °C
T
j
= 125 °C
-
-
0.2
0.4
0.37
0.74
Semiconductor Group
4
Dec-12-1996
BUP 410D
Power dissipation
P
tot
=
ƒ
(T
C
)
parameter:
T
j
≤
150 °C
55
W
Collector current
I
C
=
ƒ
(T
C
)
parameter:
V
GE
≥
15 V ,
T
j
≤
150 °C
12
A
10
P
tot
45
40
35
I
C
9
8
7
30
6
25
5
20
15
10
5
0
0
20
40
60
80
100
120
°C
160
4
3
2
1
0
0
20
40
60
80
100
120
°C
160
T
C
T
C
Safe operating area
I
C
=
ƒ
(V
CE
)
parameter:
D
= 0,
T
C
= 25°C ,
T
j
≤
150 °C
10
2
tp
= 1.4µs
Transient thermal impedance
Z
th JC
=
ƒ
(t
p
)
parameter:
D = t
p
/
T
10
1
IGBT
A
K/W
I
C
10
1
10 µs
Z
thJC
10
0
100 µs
10
0
1 ms
D = 0.50
10 ms
0.20
10
-1
0.10
0.05
10
-1
DC
single pulse
0.02
0.01
10
-2
0
10
10
1
10
2
V 10
3
10
-2
-5
10
10
-4
10
-3
10
-2
10
-1
s 10
0
V
CE
t
p
Semiconductor Group
5
Dec-12-1996
