CZT5551EBK,CZT5551EBK pdf中文资料,CZT5551EBK引脚图,CZT5551EBK电路-Datasheet-电子工程世界

器件参数

参数名称

属性值

是否Rohs认证

符合

包装说明

ROHS COMPLIANT PACKAGE-4

针数

Reach Compliance Code

compliant

ECCN代码

EAR99

外壳连接

COLLECTOR

最大集电极电流 (IC)

0.6 A

集电极-发射极最大电压

220 V

配置

SINGLE

最小直流电流增益 (hFE)

JESD-30 代码

R-PDSO-G4

JESD-609代码

湿度敏感等级

元件数量

端子数量

最高工作温度

150 °C

封装主体材料

PLASTIC/EPOXY

封装形状

RECTANGULAR

封装形式

SMALL OUTLINE

峰值回流温度（摄氏度）

260

极性/信道类型

NPN

最大功率耗散 (Abs)

2 W

认证状态

Not Qualified

表面贴装

YES

端子面层

Matte Tin (Sn)

端子形式

GULL WING

端子位置

DUAL

处于峰值回流温度下的最长时间

晶体管应用

SWITCHING

晶体管元件材料

SILICON

标称过渡频率 (fT)

100 MHz

Base Number Matches

文档预览

CZT5551E

ENHANCED SPECIFICATION

SURFACE MOUNT

NPN SILICON TRANSISTOR

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CZT5551E is an

NPN Silicon Transistor, packaged in an SOT-223 case,

designed for general purpose amplifier applications

requiring high breakdown voltage.

MARKING: FULL PART NUMBER

FEATURES:

SOT-223 CASE

APPLICATIONS:

•

General purpose switching and amplification

•

Telephone applications

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

•

High Collector Breakdown Voltage 250V

•

Low Leakage Current 50nA MAX

•

Low Saturation Voltage 100mV MAX @ 50mA

•

Complementary Device: CZT5401E

•

SOT-223 Surface Mount Package

SYMBOL

VCBO

VCEO

VEBO

TJ, Tstg

250

220

6.0

600

2.0

-65 to +150

62.5

UNITS

°C

°C/W

♦

Collector-Emitter Voltage

Emitter-Base Voltage

Power Dissipation

Continuous Collector Current

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

ICBO

TEST CONDITIONS

VCB=120V

VCB=120V, TA=100°C

VEB=4.0V

IC=100µA

IC=1.0mA

IE=10μA

IC=10mA, IB=1.0mA

IC=50mA, IB=5.0mA

IC=10mA, IB=1.0mA

IC=50mA, IB=5.0mA

250

220

6.0

100

1.00

MIN

MAX

UNITS

μA

♦

BVCBO

♦

BVCEO

♦

VCE(SAT)

♦

VCE(SAT)

VBE(SAT)

BVEBO

IEBO

♦

Enhanced specification

R1 (1-March 2010)

CZT5551E

ENHANCED SPECIFICATION

SURFACE MOUNT

NPN SILICON TRANSISTOR

ELECTRICAL CHARACTERISTICS - Continued:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

♦

hFE

♦

hFE

♦

hFE

♦

hFE

Cob

Cib

hfe

VCE=5.0V, IC=1.0mA

VCE=5.0V, IC=10mA

VCE=5.0V, IC=50mA

VCE=10V, IC=150mA

VCE=10V, IC=10mA, f=100MHz

VCB=10V, IE=0, f=1.0MHz

VEB=0.5V, IC=0, f=1.0MHz

VCE=10V, IC=1.0mA, f=1.0kHz

VCE=5.0V, IC=200μA, RS=10Ω,

f=10Hz to 15.7kHz

120

100

300

6.0

200

8.0

MHz

300

♦

Enhanced specification

SOT-223 CASE - MECHANICAL OUTLINE

LEAD CODE:

1) Base

2) Collector

3) Emitter

4) Collector

MARKING:

FULL PART NUMBER

R1 (1-March 2010)

w w w. c e n t r a l s e m i . c o m

参数对比

与CZT5551EBK相近的元器件有：CZT5551EBKLEADFREE、CZT5551ETR、CZT5551ETR13、CZT5551ETR13LEADFREE、CZT5551ETRLEADFREE。描述及对比如下：

型号	CZT5551EBK	CZT5551EBKLEADFREE	CZT5551ETR	CZT5551ETR13	CZT5551ETR13LEADFREE	CZT5551ETRLEADFREE
描述	Power Bipolar Transistor, 0.6A I(C), 220V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, ROHS COMPLIANT PACKAGE-4	Transistor	Power Bipolar Transistor, 0.6A I(C), 220V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, ROHS COMPLIANT PACKAGE-4	Transistor	Transistor	Transistor
是否Rohs认证	符合	符合	符合	符合	符合	符合
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
最大集电极电流 (IC)	0.6 A	0.6 A	0.6 A	0.6 A	0.6 A	0.6 A
配置	SINGLE	Single	SINGLE	Single	Single	Single
最小直流电流增益 (hFE)	25	120	25	25	120	120
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
极性/信道类型	NPN	NPN	NPN	NPN	NPN	NPN
最大功率耗散 (Abs)	2 W	2 W	2 W	2 W	2 W	2 W
表面贴装	YES	YES	YES	YES	YES	YES
标称过渡频率 (fT)	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz
厂商名称	-	-	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor