CZT5551E
ENHANCED SPECIFICATION
SURFACE MOUNT
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT5551E is an
NPN Silicon Transistor, packaged in an SOT-223 case,
designed for general purpose amplifier applications
requiring high breakdown voltage.
MARKING: FULL PART NUMBER
FEATURES:
SOT-223 CASE
APPLICATIONS:
•
General purpose switching and amplification
•
Telephone applications
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
•
High Collector Breakdown Voltage 250V
•
Low Leakage Current 50nA MAX
•
Low Saturation Voltage 100mV MAX @ 50mA
•
Complementary Device: CZT5401E
•
SOT-223 Surface Mount Package
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ
JA
250
220
6.0
600
2.0
-65 to +150
62.5
UNITS
V
V
V
mA
W
°C
°C/W
♦
♦
Collector-Emitter Voltage
Emitter-Base Voltage
Power Dissipation
Continuous Collector Current
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
ICBO
ICBO
TEST CONDITIONS
VCB=120V
VCB=120V, TA=100°C
VEB=4.0V
IC=100µA
IC=1.0mA
IE=10μA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
250
220
6.0
75
100
1.00
1.00
MIN
MAX
50
50
50
UNITS
nA
μA
nA
V
V
V
mV
mV
V
V
♦
BVCBO
♦
BVCEO
♦
VCE(SAT)
♦
VCE(SAT)
VBE(SAT)
VBE(SAT)
BVEBO
IEBO
♦
Enhanced specification
R1 (1-March 2010)
CZT5551E
ENHANCED SPECIFICATION
SURFACE MOUNT
NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS - Continued:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
♦
hFE
♦
hFE
♦
hFE
♦
hFE
fT
Cob
Cib
hfe
NF
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=50mA
VCE=10V, IC=150mA
VCE=10V, IC=10mA, f=100MHz
VCB=10V, IE=0, f=1.0MHz
VEB=0.5V, IC=0, f=1.0MHz
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=5.0V, IC=200μA, RS=10Ω,
f=10Hz to 15.7kHz
120
120
75
25
100
300
6.0
20
50
200
8.0
dB
MHz
pF
pF
300
♦
Enhanced specification
SOT-223 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Collector
3) Emitter
4) Collector
MARKING:
FULL PART NUMBER
R1 (1-March 2010)
w w w. c e n t r a l s e m i . c o m
