Green
DMP45H4D9HJ3
450V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BV
DSS
-450V
R
DS(ON) Max
4.9Ω @ V
GS
= -10V
I
D
T
C
= +25°
C
-4.6A
Features
Low Input Capacitance
High BV
DSS
Rating for Power Application
Low Input/Output Leakage
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description
This MOSFET is designed to minimize the on-state resistance and yet
maintain superior switching performance, making it ideal for high
efficiency power management applications.
Mechanical Data
Case: TO251 (Type TH)
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (Approximate)
Applications
Motor Control
DC-DC Converters
Power Management Functions
Uninterrupted Power Supply
TO251 (Type TH)
Top View
Bottom View
G
D
S
Internal Schematic
Top View
Ordering Information
(Note 4)
Part Number
DMP45H4D9HJ3
Notes:
Case
TO251 (Type TH)
Packaging
75 pieces / tube
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
45H4D9
YYWW
= Manufacturer’s Marking
45H4D9 = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Last Two Digits of Year (ex: 17 = 2017)
WW or WW = Week Code (01 to 53)
DMP45H4D9HJ3
Document number: DS39244 Rev. 2 - 2
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June 2017
© Diodes Incorporated
DMP45H4D9HJ3
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) V
GS
= -10V
Maximum Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L = 60mH (Note 7)
Avalanche Energy, L = 60mH (Note 7)
Peak Diode Recovery dv/dt (V
DD
= -400V, I
D
= -2.0A)
Steady
State
T
C
= +25°
C
T
C
= +100°
C
Symbol
V
DSS
V
GSS
I
D
I
S
I
DM
I
AS
E
AS
dv/dt
Value
-450
±30
Unit
V
V
A
A
A
A
mJ
V/ns
Thermal Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
T
C
= +25°
C
T
C
= +100°
C
Symbol
P
D
R
JA
R
JC
T
J,
T
STG
Value
Unit
W
°
C/W
-55 to +150
°
C
Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (V
GS
= -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
t
RR
Q
RR
Min
-450
-3.0
Typ
-4.0
3.1
547
74
3.1
13.7
3.4
6.0
19
40
32
31
164
1.3
Max
-1
±100
-5.0
4.9
-1.3
Unit
V
µA
nA
V
Ω
V
Test Condition
V
GS
= 0V, I
D
= -250µA
V
DS
= -450V, V
GS
= 0V
V
GS
= ±30V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -10V, I
D
= -1.05A
V
GS
= 0V, I
S
= -2.1A
pF
V
DS
= -25V, V
GS
= 0V, f = 1.0MHz
nC
V
DS
= -360V, I
D
= -2.7A, V
GS
= -10V
ns
V
DD
= -225V, R
G
= 3.0Ω, I
D
= -2.7A
ns
nC
V
GS
= 0V, V
DD
= -200V, I
S
= -2.7A,
dI/dt = 100A/μs
5. Device mounted on infinite heatsink.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.
7. Guaranteed by design. Not subject to production testing.
8. Short duration pulse test used to minimize self-heating effect.
DMP45H4D9HJ3
Document number: DS39244 Rev. 2 - 2
2 of 7
www.diodes.com
June 2017
© Diodes Incorporated
DMP45H4D9HJ3
3.0
V
GS
= -8.0V
2.5
I
D
, DRAIN CURRENT (A)
V
GS
= -10V
I
D
, DRAIN CURRENT (A)
V
GS
= -15V
2.0
V
GS
= -20V
V
GS
= -7.0V
1.5
2
1.8
1.6
1.4
1.2
1
0.8
0.6
150
o
C
0.4
V
GS
= -4.5V
0.0
0
2
4
6
8
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
10
V
GS
= -5.0V
0.2
0
0
1
2
3
4
5
6
7
8
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE ()
10
125
o
C
85
o
C
25
o
C
-55
o
C
V
DS
= -20V
1.0
V
GS
= -6.0V
0.5
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE ()
4
3.8
3.6
3.4
3.2
3
2.8
2.6
2.4
2.2
2
0
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
V
GS
= -10V
8
I
D
= -1.05A
6
4
2
0
0
5
10
15
20
25
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
3
30
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE ()
8
V
GS
= -10V
7
6
150
o
C
5
85
o
C
4
3
2
1
0
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current
and Temperature
-55
o
C
25
o
C
125
o
C
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
2.5
2
V
GS
= -10V, I
D
= -1.05A
1.5
1
0.5
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
DMP45H4D9HJ3
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DMP45H4D9HJ3
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE ()
10
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
5
8
4.5
I
D
= -1mA
4
I
D
= -250µA
6
V
GS
= -10V, I
D
= -1.05A
3.5
4
3
2
2.5
0
-50
-25
0
25
50
75 100 125
T
J
, JUNCTION TEMPERATURE (℃)
150
2
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
Figure 7. On-Resistance Variation with Temperature
2
10000
C
T
, JUNCTION CAPACITANCE (pF)
1.8
I
S
, SOURCE CURRENT (A)
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
V
GS
= 0V
f = 1MHz
1000
C
iss
100
C
oss
10
T
A
= 150
o
C
T
A
= 125
o
C
T
A
= 85
o
C
T
A
= 25
o
C
T
A
= -55
o
C
1
C
rss
0
0.3
0.6
0.9
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
1.5
0
5
10
15
20
25
30
35
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
P
W
= 10µs
40
10
10
R
DS(ON)
Limited
8
I
D
, DRAIN CURRENT (A)
V
GS
(V)
6
V
DS
= -360V, I
D
= -2.7A
1
P
W
= 1s
P
W
= 100ms
T
J(Max)
= 150℃
T
C
= 25℃
P
W
= 10ms
Single Pulse
P
W
= 1ms
DUT on Infinite
Heatsink
P
W
= 100µs
V
GS
= -10V
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
1000
4
2
0
0
2
6
8
10
Q
g
(nC)
Figure 11. Gate Charge
4
12
14
0.1
DMP45H4D9HJ3
Document number: DS39244 Rev. 2 - 2
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© Diodes Incorporated
DMP45H4D9HJ3
1
D=0.9
r(t), TRANSIENT THERMAL RESISTANCE
D=0.5
D=0.3
0.1
D=0.1
D=0.05
D=0.7
0.01
D=0.02
D=0.01
D=0.005
D=Single Pulse
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
R
θJC
(t) = r(t) * R
θJC
R
θJC
= 1.2℃/W
Duty Cycle, D = t1/t2
DMP45H4D9HJ3
Document number: DS39244 Rev. 2 - 2
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June 2017
© Diodes Incorporated
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