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FDD10AN06A0_F085 N-Channel PowerTrench
®
MOSFET
Dec 2012
FDD10AN06A0_F085
N-Channel PowerTrench
®
MOSFET
60V, 50A, 10.5mΩ
Features
• r
DS(ON)
= 9.4mΩ (Typ.), V
GS
= 10V, I
D
= 50A
• Q
g
(tot) = 28nC (Typ.), V
GS
= 10V
• Low Miller Charge
• Low Qrr Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
• RoHS Compliant
Formerly developmental type 82560
Applications
• Motor / Body Load Control
• ABS Systems
• Powertrain Management
• Injection Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 12V and 24V systems
DRAIN
(FLANGE)
GATE
SOURCE
D
G
S
TO-252AA
FDD SERIES
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
I
D
Continuous (T
C
< 115
o
C, V
GS
= 10V)
Continuous (T
amb
= 25 C, V
GS
= 10V, with R
θJA
= 52 C/W)
Pulsed
E
AS
P
D
T
J
, T
STG
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25 C
Operating and Storage Temperature
o
o
o
Parameter
Ratings
60
±20
50
11
Figure 4
429
135
0.9
-55 to 175
Units
V
V
A
A
A
mJ
W
W/
o
C
o
C
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in
2
copper pad area
1.11
100
52
o
o
o
C/W
C/W
C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
