FDS6982
June 1999
FDS6982
Dual N-Channel, Notebook Power Supply MOSFET
General Description
This part is designed to replace two single SO-8 MOSFETs
in synchronous DC:DC power supplies that provide the
various peripheral voltage rails required in notebook
computers and other battery powered electronic devices.
FDS6982 contains two unique 30V, N-channel, logic level,
PowerTrench® MOSFETs designed to maximize power
conversion efficiency.
The high-side switch (Q1) is designed with specific
emphasis on reducing switching losses while the low-side
switch (Q2) is optimized for low conduction losses (less
than 20mΩ at V
GS
= 4.5V).
Features
•
•
Q2: 8.6A, 30V. R
DS(on)
= 0.015
Ω
@ V
GS
= 10V
R
DS(on)
= 0.020
Ω
@ V
GS
= 4.5V
Q1: 6.3A, 30V. R
DS(on)
= 0.028
Ω
@ V
GS
= 10V
R
DS(on)
= 0.035
Ω
@ V
GS
= 4.5V
•
•
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
Applications
•
Battery powered synchronous DC:DC converters.
•
Embedded DC:DC conversion.
D1
D1
D2
D2
G1
6
7
Q2
5
Q1
4
3
2
1
SO-8
pin
1
G2
S2
S1
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
A
= 25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
Q2
30
±
20
8.6
30
2
1.6
1
0.9
-55 to +150
Q1
30
±
20
6.3
20
Units
V
V
A
W
T
J
, T
stg
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
°
C/W
°
C/W
Package Marking and Ordering Information
Device Marking
FDS6982
1999
Fairchild Semiconductor Corporation
Device
FDS6982
Reel Size
13”
Tape Width
12mm
Quantity
2500 units
FDS6982, Rev. D1
FDS6982
Electrical Characteristics
Symbol
Parameter
T
A
= 25°C unless otherwise noted
Test Conditions
Type Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
V
GS
= 0 V, I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
Q2
Q1
Q2
Q1
All
All
All
30
30
27
26
1
100
-100
V
mV/°C
µA
nA
nA
Zero Gate Voltage Drain
V
DS
= 24 V, V
GS
= 0 V
Current
Gate-Body Leakage, Forward V
GS
= 20 V, V
DS
= 0 V
Gate-Body Leakage, Reverse V
GS
= -20 V, V
DS
= 0 V
(Note 2)
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
GS
= 10 V, I
D
= 8.6 A
V
GS
= 10 V, I
D
= 8.6 A, T
J
= 125°C
V
GS
= 4.5 V, I
D
= 7.5 A
V
GS
= 10 V, I
D
= 6.3 A
V
GS
= 10 V, I
D
= 6.3 A, T
J
= 125°C
V
GS
= 4.5 V, I
D
= 5.6 A
V
GS
= 10 V, V
DS
= 5 V
V
DS
= 5 V, I
D
= 8.6 A
V
DS
= 5 V, I
D
= 6.3 A
Q2
Q1
Q2
Q1
Q2
1
1
2.2
1.6
-5
-4
0.012
0.018
0.016
0.021
0.038
0.028
3
3
V
mV/°C
Q1
0.015
0.024
0.020
0.028
0.047
0.035
Ω
Ω
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
Q2
Q1
Q2
Q1
30
20
50
40
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
Q2
Q1
Q2
Q1
Q2
Q1
2085
760
420
160
160
70
pF
pF
pF
FDS6982, Rev. D1
FDS6982
Electrical Characteristics
Symbol
Parameter
(continued)
T
A
= 25°C unless otherwise noted
Test Conditions
(Note 2)
Type Min
Typ
Max Units
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 10V, R
GEN
= 6
Ω
Q2
V
DS
= 15 V, I
D
= 8.6 A, V
GS
= 5 V
Q1
V
DS
= 15 V, I
D
= 6.3 A,V
GS
= 5 V
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
15
10
11
14
36
21
18
7
18.5
8.5
7.3
2.4
6.2
3.1
27
18
20
25
58
34
29
14
26
12
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward V
GS
= 0 V, I
S
= 1.3 A
V
GS
= 0 V, I
S
= 1.3 A
Voltage
(Note 2)
(Note 2)
Q2
Q1
Q2
Q1
0.72
0.74
1.3
1.3
1.2
1.2
A
V
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.Thermal rating based on independant
single device opperation.
a) 78° C/W when
mounted on a 0.5 in
2
pad of 2 oz. copper.
b) 125° C/W when
mounted on a 0.02 in
2
pad of 2 oz. copper.
c) 135° C/W when
mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
FDS6982, Rev. D1
FDS6982
Typical Characteristics: Q2
50
V
GS
= 10V
40
5.0V
4.5V
2
1.8
1.6
1.4
V
GS
= 4.0V
4.5V
5.0V
1.2
6.0V
7.0V
1
10V
30
4.0V
20
3.5V
10
3.0V
0
1
2
3
4
0
0.8
0
10
20
30
40
50
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
1.6
I
D
= 8.6A
V
GS
= 10V
0.04
I
D
= 4.5A
0.03
1.4
1.2
0.02
T
A
= 125 C
o
1
0.01
T
A
= 25 C
o
0.8
0.6
-50
-25
0
25
50
75
100
o
0
125
150
2
4
6
8
10
T
J
, JUNCTION TEMPERATURE ( C)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
50
V
DS
= 5V
40
100
T
A
= -55 C
o
25 C
125 C
o
o
V
GS
= 0V
10
T
A
= 125 C
1
o
30
0.1
25 C
-55 C
o
o
20
0.01
0.001
0.0001
10
0
1
2
3
4
5
6
0
0.4
0.8
1.2
1.6
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDS6982, Rev. D1
FDS6982
Typical Characteristics: Q2
(continued)
10
I
D
= 8.6A
8
15V
V
DS
= 5V
10V
3000
2500
C
ISS
2000
f = 1MHz
V
GS
= 0 V
6
1500
4
1000
2
500
0
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
C
OSS
C
RSS
0
Q
g
, GATE CHARGE (nC)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
R
DS(ON)
LIMIT
10
100
µ
s
1ms
10ms
100ms
1s
10s
DC
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 135 C/W
T
A
= 25 C
0.01
0.1
1
10
100
o
o
30
SINGLE PULSE
25
20
15
10
5
0
0.01
0.1
1
10
100
1000
R
θ
JA
= 135 C/W
TA = 25 C
o
o
1
0.1
V
DS
, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
FDS6982, Rev. D1
