FFP20UP20DN Ultrafast Recovery Power Rectifier
FFP20UP20DN
Ultrafast Recovery Power Rectifier
Features
• Ultrafast with Soft Recovery : < 45ns
• High Reverse Voltage : V
RRM
= 200V
• Avalanche Energy Rated
• Planar Construction
Applications
• Output Rectifiers
• Switching Mode Power Supply
• Free-wheeling diode for motor application
• Power switching circuits
1
TO-220
1
2
3
1. Anode 2. Cathode 3. Anode
1.Anode 2.Cathode 3.Anode
Absolute Maximum Ratings
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FSM
T
J,
T
STG
(per diode) T
a
= 25°C unless otherwise noted
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Operating Junction and Storage Temperature
= 25°C unless otherwise noted
Value
200
200
200
@ T
C
= 120°C
10
100
- 65 to +150
Units
V
V
V
A
A
°C
Thermal Characteristics
T
Symbol
R
θJC
a
Parameter
Maximum Thermal Resistance, Junction to Case
Max
3.0
Units
°C/W
©2005 Fairchild Semiconductor Corporation
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FFP20UP20DN Rev. A
FFP20UP20DN Ultrafast Recovery Power Rectifier
Electrical Characteristics
Symbol
V
FM
I
RM
t
rr
t
a
t
b
Q
rr
W
AVL
*
(per diode) T
a
= 25°C unless otherwise noted
Parameter
I
F
= 10A
I
F
= 10A
V
R
= 200V
V
R
= 200V
I
F
=1A, di/dt = 100A/µs, V
CC
= 30V
I
F
=10A, di/dt = 200A/µs, V
CC
= 130V
I
F
=10A, di/dt = 200A/µs, V
CC
= 130V
T
C
= 25
°C
T
C
= 150
°C
T
C
= 25
°C
T
C
= 150
°C
T
C
= 25
°C
T
C
= 25
°C
T
C
= 25
°C
T
C
= 25
°C
T
C
= 25
°C
Min.
-
-
-
-
-
-
-
-
-
10
Typ.
-
-
-
-
-
-
15
12
36
-
Max.
1.15
1.0
100
500
35
45
-
-
-
-
Units
V
V
µA
µA
ns
ns
ns
ns
nC
mJ
*
Avalanche Energy (L = 20mH)
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
FFP20UP20DN Rev. A
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FFP20UP20DN Ultrafast Recovery Power Rectifier
Typical Performance Characteristics
Figure 1. Typical Forward Voltage Drop
50
100
Figure 2. Typical Reverse Current
Forward Current , I
F
[A]
10
T
C
= 100 C
Reverse Current , I
R
[
µ
A]
o
10
T
C
= 100 C
1
o
1
T
C
= 25 C
o
0.1
0.01
T
C
= 25 C
o
0.1
0.0
0.5
1.0
1.5
2.0
0.001
0
50
100
150
200
Forward Voltage , V
F
[V]
Reverse Voltage , V
R
[V]
Figure 3. Typical Junction Capacitance
400
Figure 4. Typical Reverse Recovery Time
60
f = 1 MHz
Reverse Recovery Time , t
rr
[ns]
I
F
=10A
50
Capacitance , Cj [pF]
100
T
C
=125 C
40
o
30
T
C
=25 C
20
100
200
300
400
500
o
10
0.1
1
10
100
Reverse Voltage , V
R
[V]
di/dt [A/
µ
s]
Figure 5. Typical Reverse Recovery Current
12
Figure 6. Forward Current Deration Curve
Average Rectified Forward Current, I
F(AV)
[A]
14
12
10
Reverse Recovery Current , I
rr
[A]
I
F
= 10A
10
8
DC
8
6
4
2
0
100
6
T
C
=125 C
o
4
T
C
=25 C
2
o
0
100
200
300
400
500
110
120
130
o
140
150
di/dt [A/
µ
s]
Case Temperature, T
C
[ C]
FFP20UP20DN Rev. A
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Package Demensions
FFP20UP20DN Ultrafast Recovery Power Rectifier
TO-220
9.90
±0.20
1.30
±0.10
2.80
±0.10
4.50
±0.20
(8.70)
ø3.60
±0.10
(1.70)
1.30
–0.05
+0.10
9.20
±0.20
(1.46)
13.08
±0.20
(1.00)
(3.00)
15.90
±0.20
1.27
±0.10
1.52
±0.10
0.80
±0.10
2.54TYP
[2.54
±0.20
]
2.54TYP
[2.54
±0.20
]
10.08
±0.30
18.95MAX.
(3.70)
)
(45
°
0.50
–0.05
+0.10
2.40
±0.20
10.00
±0.20
Dimensions in Millimeters
©
Ultrafast Recovery Power Rectifier
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Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
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Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I16