30V N-Channel Enhancement Mode MOSFET
Product Description
The GSM4972 is the Dual N-Channel logic
enhancement mode power field effect transistors
are produced using high cell density , DMOS
trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low
voltage application , notebook computer power
management and other battery powered circuits
where high-side switching .
Features
30V/8.5A,R
DS(ON)
= 14mΩ@V
GS
= 10V
30V/7.8A,R
DS(ON)
= 18mΩ@V
GS
= 4.5V
Super high density cell design for extremely
low R
DS (ON)
Exceptional on-resistance and maximum DC
current capability
SOP – 8P package design
Applications
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
Packages & Pin Assignments
GSM4972SF (SOP-8P)
1
2
3
4
5
6
7
8
S1
G1
S2
Source 1
Gate 1
G2
D2
D2
D1
D1
Gate 2
Drain 2
Drain 2
Drain 1
Drain 1
www.gs-power.com
GSM4972
1
Source 2
Ordering Information
Part Number
GSM4972SF
Package
SOP- 8P
Quantity Reel
2500 PCS
Marking Information
GS P/N
4972
AAAAAA
BBBBBB
Lot Code
Date Code
Absolute Maximum Ratings
T
A
=25ºC Unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
I
DM
I
S
P
D
T
J
T
STG
R
θJA
Drain-Source Voltage
Gate –Source Voltage
Parameter
Typical
30
±20
T
A
=25 ºC
T
A
=70 ºC
8.5
7.5
20
2.3
2.5
1.6
-55/150
-55/150
80
Unit
V
V
A
A
A
W
ºC
ºC
ºC/W
Continuous Drain Current(T
J
=150ºC)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
T
A
=25 ºC
T
A
=70 ºC
Electrical Characteristics
T
A
=25ºC Unless otherwise noted
www.gs-power.com
GSM4972
2
Symbol
Parameter
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Conditions
Static
Min
Typ
Max
Unit
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
V
GS
=0V,I
D
=250uA
V
DS
=V
GS
,I
D
=250uA
V
DS
=0V,V
GS
=±20V
V
DS
=24V,V
GS
=0V
V
DS
=24V,V
GS
=0V
T
J
=85℃
V
DS
≥5V,V
GS
=10V
V
GS
= 10V,I
D
=8.5A
V
GS
=4.5V,I
D
=7.8A
V
DS
=15V,I
D
=6.2A
I
S
=2.3A,V
GS
=0V
Dynamic
30
1.0
3.0
±100
1
5
25
12
15
13
0.8
1.2
14
18
V
nA
uA
A
mΩ
S
V
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
V
DS
=15,V
GS
=0V
f=1MHz
V
DS
=15V,V
GS
=10V
I
D
= 2A
16
4.2
2.5
1350
258
150
15
V
DD
=15V,R
L
=15Ω
I
D
≡5.0A,V
GEN
=10V
R
G
=1Ω
6
20
12
24
nC
pF
20
16
40
20
ns
Turn-Off Time
Typical Performance Characteristics
www.gs-power.com
GSM4972
3
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current and
Gate Voltage
Capacitance
Gate Charge
On-Resistance vs. Junction Temperature
Typical Performance Characteristics
(Continue)
www.gs-power.com
GSM4972
4
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
Current Derating
Normalized Thermal Transient Impedance, Junction-to-Case
Package Dimension
www.gs-power.com
GSM4972
5
