HMC608
v01.0707
GaAs PHEMT MEDIUM
POWER AMPLIFIER, 9.5 - 11.5 GHz
Typical Applications
The HMC608 is ideal for:
• Point-to-Point Radios
Features
Output IP3: +33 dBm
Saturated Power: +27.5 dBm @ 23% PAE
Gain: 32 dB
Supply: +5V @ 310 mA
50 Ohm Matched Input/Output
3
LINEAR & POWER AMPLIFIERS - CHIP
• Point-to-Multi-Point Radios
• Military End-Use
Die Size: 2.1 x 1.2 x 0.1 mm
Functional Diagram
General Description
The HMC608 is a high dynamic range GaAs PHEMT
MMIC Medium Power Amplifier chip. The amplifier
has two modes of operation: high gain mode (Vpd pin
shorted to ground); and low gain mode (Vpd pin left
open). The electrical specifications in the table below
are shown for the amplifier operating in high gain
mode. Operating from 9.5 to 11.5 GHz, the amplifier
provides 32 dB of gain, +27.5 dBm of saturated power
and 23% PAE from a +5V supply voltage. Noise
figure is 5.5 dB while output IP3 is +33 dBm. The RF
I/Os are DC blocked and matched to 50 Ohms for
ease of use.
Electrical Specifi cations,
T
A
= +25° C, Vdd1, 2, 3 = 5V, Idd = 310 mA
[1]
, Vpd = GND
[2]
Parameter
Frequency Range
Gain
[3]
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Idd = Idd1 +Idd2 +Idd3)(Vdd = +5V, Vgg = -2.6V Typ.)
[3]
[1] Adjust Vgg between -3 to 0V to achieve Idd = 310 mA typical.
[2] Vpd= ground for high gain mode, Vpd = open for low gain mode.
[3] In low gain mode, typical gain is 22 dB and typical current is 67 mA.
23
28
Min.
Typ.
9.5 - 11.5
32
0.02
12
20
27
27.5
33
5.5
310
350
0.03
Max.
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
3 - 106
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC608
v01.0707
GaAs PHEMT MEDIUM
POWER AMPLIFIER, 9.5 - 11.5 GHz
Broadband Gain & Return Loss
35
30
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
7
8
9
10
Gain vs. Temperature
38
34
S21
S11
S22
RESPONSE (dB)
GAIN (dB)
30
+25C
+85C
-55C
3
LINEAR & POWER AMPLIFIERS - CHIP
26
22
18
11
12
13
14
9
9.5
10
10.5
11
11.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
-5
RETURN LOSS (dB)
Output Return Loss vs. Temperature
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
-35
+25C
+85C
-55C
-10
-15
-20
-25
-30
9
9.5
10
10.5
11
11.5
FREQUENCY (GHz)
+25C
+85C
-55C
9
9.5
10
10.5
11
11.5
FREQUENCY (GHz)
P1dB vs. Temperature
35
30
25
P1dB (dBm)
20
15
10
5
0
9
9.5
10
10.5
11
11.5
FREQUENCY (GHz)
Psat vs. Temperature
35
30
25
Psat (dBm)
20
15
10
5
0
9
9.5
10
10.5
11
11.5
FREQUENCY (GHz)
+25C
+85C
-40C
+25C
+85C
-40C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 10
HMC608
v01.0707
GaAs PHEMT MEDIUM
POWER AMPLIFIER, 9.5 - 11.5 GHz
Output IP3 vs. Temperature
40
35
Noise Figure vs. Temperature
10
9
8
NOISE FIGURE (dB)
OIP3 (dBm)
3
LINEAR & POWER AMPLIFIERS - CHIP
30
25
20
15
10
5
0
9
9.5
10
10.5
11
11.5
FREQUENCY (GHz)
+25C
+85C
-40C
7
6
5
4
3
2
1
0
9
9.5
10
10.5
11
11.5
FREQUENCY (GHz)
+25C
+85C
-55C
Gain, Power & OIP3
vs. Supply Voltage @ 10.3 GHz
GAIN (dB), P1dB(dBm), Psat (dBm), IP3 (dBm)
35
33
Reverse Isolation vs. Temperature
0
-10
ISOLATION (dB)
-20
-30
-40
-50
31
Gain
P1dB
Psat
IP3
+25C
+85C
-55C
29
27
-60
25
4.5
-70
9
9.5
10
10.5
11
11.5
FREQUENCY (GHz)
5
Vdd Supply Voltage (V)
5.5
Power Compression @ 10.3 GHz
35
Pout (dBm), GAIN (dB), PAE (%)
30
25
20
15
10
5
0
-20
Power Dissipation
4
3.5
3
2.5
2
1.5
1
-30
9 GHz
9.5 GHz
10 GHz
10.5 GHz
11.0 GHz
11.5 GHz
Pout
Gain
PAE
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
2
POWER DISSIPATION (W)
-25
-20
-15
-10
-5
0
Pin (dBm)
INPUT POWER (dBm)
3 - 108
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC608
v01.0707
GaAs PHEMT MEDIUM
POWER AMPLIFIER, 9.5 - 11.5 GHz
Low Gain Mode,
Broadband Gain & Return Loss
25
20
15
RESPONSE (dBm)
10
5
0
-5
-10
-15
-20
-25
-30
-35
7
8
9
10
11
12
13
14
FREQUENCY (GHz)
S21
S11
S22
Low Gain Mode, Gain vs. Temperature
28
26
24
22
GAIN (dB)
20
18
16
14
12
10
8
9
9.5
10
10.5
11
11.5
FREQUENCY (GHz)
+25C
+85C
-55C
3
LINEAR & POWER AMPLIFIERS - CHIP
Low Gain Mode,
Input Return Loss vs. Temperature
0
-5
RETURN LOSS (dB)
Low Gain Mode,
Output Return Loss vs. Temperature
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
-35
+25C
+85C
-55C
-10
-15
-20
-25
-30
9
9.5
10
10.5
11
11.5
FREQUENCY (GHz)
+25C
+85C
-55C
9
9.5
10
10.5
11
11.5
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 10
HMC608
v01.0707
GaAs PHEMT MEDIUM
POWER AMPLIFIER, 9.5 - 11.5 GHz
Typical Supply Current vs. Vdd
Vdd (Vdc)
+4.5
+5.0
+5.5
Idd (mA)
300
310
325
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2, Vdd3)
Gate Bias Voltage (Vgg)
7 Vdc
-4.0 to -1.0 Vdc
+10 dBm
175 °C
2.33W
38.6 °C/W
-65 to +150 °C
-55 to +85 °C
3
LINEAR & POWER AMPLIFIERS - CHIP
RF Input Power (RFIN)(Vdd = +5.0 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 25.89 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
Note: Amplifi er will operate over full voltage ranges shown
above. Vgg adjusted to achieve Idd= 310 mA at +5.0V.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Die Packaging Information
[1]
Standard
GP-2
Alternate
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
3. DIE THICKNESS IS 0.004 (0.100)
4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE
5. BACKSIDE METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. BOND PAD METALIZATION: GOLD
3 - 110
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
