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HN1B04FEY

TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2N1G, ES6, 6 PIN, BIP General Purpose Small Signal

器件类别：分立半导体    晶体管   

厂商名称：Toshiba(东芝)

厂商官网：http://toshiba-semicon-storage.com/

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参数 预览 参数对比
器件参数
参数名称
属性值
厂商名称
Toshiba(东芝)
包装说明
SMALL OUTLINE, R-PDSO-F6
针数
6
Reach Compliance Code
unknown
ECCN代码
EAR99
最大集电极电流 (IC)
0.15 A
集电极-发射极最大电压
50 V
配置
SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE)
120
JESD-30 代码
R-PDSO-F6
元件数量
2
端子数量
6
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
极性/信道类型
NPN AND PNP
最大功率耗散 (Abs)
0.1 W
认证状态
Not Qualified
表面贴装
YES
端子形式
FLAT
端子位置
DUAL
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
标称过渡频率 (fT)
80 MHz
文档预览
HN1B04FE
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
HN1B04FE
Audio Frequency General Purpose Amplifier Applications
Q1:
High voltage and high current
: V
CEO
= 50V, I
C
= 150mA (max)
High h
FE
: h
FE
= 120 to 400
Excellent h
FE
linearity
: h
FE
(I
C
= 0.1mA) / h
FE
(I
C
= 2mA) = 0.95 (typ.)
Unit: mm
Q2:
High voltage and high current
: V
CEO
=
−50V,
I
C
=
−150mA
(max)
High h
FE
: h
FE
= 120 to 400
Excellent h
FE
linearity
: h
FE
(I
C
=
−0.1mA)
/ h
FE
(I
C
=
−2mA)
= 0.95 (typ.)
Q1 Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
Rating
60
50
5
150
30
Unit
V
V
V
mA
mA
JEDEC
―
JEITA
―
TOSHIBA
2-2N1G
Weight: 3.0mg (typ.)
Marking
6
Unit
V
V
V
mA
mA
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
Rating
−50
−50
−5
−150
−30
Type Name
5
4
hFE Rank
1D
1
2
3
Equivalent Circuit (Top View)
Q1, Q2 Common Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
P
C
*
T
j
T
stg
Rating
100
150
−55
to 150
Unit
mW
°C
°C
6
5
4
Q1
Q2
1
2
3
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
* Total rating
2000-05
1
2014-03-01
HN1B04FE
Q1
Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE (Note)
V
CE (sat)
f
T
C
ob
Test
Circuit
―
―
―
―
―
―
Test Condition
V
CB
= 60V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 6V, I
C
= 2mA
I
C
= 100mA, I
B
= 10mA
V
CE
= 10V, I
C
= 1mA
V
CB
= 10V, I
E
= 0, f = 1MHz
Min
―
―
120
―
80
―
Typ.
―
―
―
0.1
―
2
Max
0.1
0.1
400
0.25
―
―
V
MHz
pF
Unit
μA
μA
Q2
Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE (Note)
V
CE (sat)
f
T
C
ob
Test
Circuit
―
―
―
―
―
―
Test Condition
V
CB
=
−50V,
I
E
= 0
V
EB
=
−5V,
I
C
= 0
V
CE
=
−6V,
I
C
=
−2mA
I
C
=
−100mA,
I
B
=
−10mA
V
CE
=
−10V,
I
C
=
−1mA
V
CB
=
−10V,
I
E
= 0, f = 1MHz
Min
―
―
120
―
80
―
Typ.
―
―
―
−0.1
―
4
Max
−0.1
−0.1
400
−0.3
―
―
V
MHz
pF
Unit
μA
μA
Note: h
FE
Classification Y (Y): 120 to 240, GR (G): 200 to 400
( ) Marking Symbol
2
2014-03-01
HN1B04FE
Q1 (NPN transistor)
3
2014-03-01
HN1B04FE
Q2 (PNP transistor)
4
2014-03-01
HN1B04FE
(Q1, Q2 Common)
P
C
*
– Ta
(mW)
COLLECTOR POWER DISSIPATION P
C
200
150
100
50
0
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE
Ta (°C)
*:Total Rating
5
2014-03-01
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参数对比
与HN1B04FEY相近的元器件有：HN1B04FE-GR,LF(T、HN1B04FE-Y,LF、HN1B04FE-GR,LF、HN1B04FE-GR、HN1B04FE-Y、HN1B04FE-Y(T5LUPTF。描述及对比如下：
型号 HN1B04FEY HN1B04FE-GR,LF(T HN1B04FE-Y,LF HN1B04FE-GR,LF HN1B04FE-GR HN1B04FE-Y HN1B04FE-Y(T5LUPTF
描述 TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2N1G, ES6, 6 PIN, BIP General Purpose Small Signal tran pnp/npn -50v -0.15a es6 TRANS NPN/PNP 50V 0.15A ES6 额定功率：100mW 集电极电流Ic：150mA 集射极击穿电压Vce：50V 晶体管类型：NPN,PNP NPN/PNP，Vceo=±50V,Ic=±0.15A TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2N1G, ES6, 6 PIN, BIP General Purpose Small Signal TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2N1G, ES6, 6 PIN, BIP General Purpose Small Signal Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
厂商名称 Toshiba(东芝) - - - Toshiba(东芝) Toshiba(东芝) Toshiba(东芝)
包装说明 SMALL OUTLINE, R-PDSO-F6 - SMALL OUTLINE, R-PDSO-F6 - SMALL OUTLINE, R-PDSO-F6 SMALL OUTLINE, R-PDSO-F6 SMALL OUTLINE, R-PDSO-F6
Reach Compliance Code unknown - unknown - unknown unknown unknown
最大集电极电流 (IC) 0.15 A - 0.15 A - 0.15 A 0.15 A 0.15 A
集电极-发射极最大电压 50 V - 50 V - 50 V 50 V 50 V
配置 SEPARATE, 2 ELEMENTS - SEPARATE, 2 ELEMENTS - SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE) 120 - 120 - 200 120 120
JESD-30 代码 R-PDSO-F6 - R-PDSO-F6 - R-PDSO-F6 R-PDSO-F6 R-PDSO-F6
元件数量 2 - 2 - 2 2 2
端子数量 6 - 6 - 6 6 6
最高工作温度 150 °C - 150 °C - 150 °C 150 °C -
封装主体材料 PLASTIC/EPOXY - PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR - RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE - SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 NPN AND PNP - NPN AND PNP - NPN AND PNP NPN AND PNP NPN AND PNP
表面贴装 YES - YES - YES YES YES
端子形式 FLAT - FLAT - FLAT FLAT FLAT
端子位置 DUAL - DUAL - DUAL DUAL DUAL
晶体管应用 AMPLIFIER - AMPLIFIER - AMPLIFIER AMPLIFIER AMPLIFIER
晶体管元件材料 SILICON - SILICON - SILICON SILICON SILICON
标称过渡频率 (fT) 80 MHz - 80 MHz - 80 MHz 80 MHz 80 MHz
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器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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