型号
- 型号
- 关键词
TRANSISTOR 100 mA, 120 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, SM6, 2-3N1B, 6 PIN, BIP General Purpose Small Signal
厂商名称：Toshiba(东芝)
厂商官网：http://toshiba-semicon-storage.com/
下载文档| 型号 | HN3C51FGR | HN3C51F-GR | HN3C51F-BL | HN3C51FBL |
|---|---|---|---|---|
| 描述 | TRANSISTOR 100 mA, 120 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, SM6, 2-3N1B, 6 PIN, BIP General Purpose Small Signal | TRANSISTOR 100 mA, 120 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3N1B, SM6, 6 PIN, BIP General Purpose Small Signal | TRANSISTOR 100 mA, 120 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3N1B, SM6, 6 PIN, BIP General Purpose Small Signal | TRANSISTOR 100 mA, 120 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, SM6, 2-3N1B, 6 PIN, BIP General Purpose Small Signal |
| 包装说明 | SMALL OUTLINE, R-PDSO-G6 | SMALL OUTLINE, R-PDSO-G6 | 2-3N1B, SM6, 6 PIN | SMALL OUTLINE, R-PDSO-G6 |
| 针数 | 6 | 6 | 6 | 6 |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| 最大集电极电流 (IC) | 0.1 A | 0.1 A | 0.1 A | 0.1 A |
| 集电极-发射极最大电压 | 120 V | 120 V | 120 V | 120 V |
| 配置 | SEPARATE, 2 ELEMENTS | SEPARATE, 2 ELEMENTS | SEPARATE, 2 ELEMENTS | SEPARATE, 2 ELEMENTS |
| 最小直流电流增益 (hFE) | 200 | 200 | 350 | 350 |
| JESD-30 代码 | R-PDSO-G6 | R-PDSO-G6 | R-PDSO-G6 | R-PDSO-G6 |
| 元件数量 | 2 | 2 | 2 | 2 |
| 端子数量 | 6 | 6 | 6 | 6 |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 极性/信道类型 | NPN | NPN | NPN | NPN |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES |
| 端子形式 | GULL WING | GULL WING | GULL WING | GULL WING |
| 端子位置 | DUAL | DUAL | DUAL | DUAL |
| 晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
| 标称过渡频率 (fT) | 100 MHz | 100 MHz | 100 MHz | 100 MHz |
| Base Number Matches | 1 | 1 | 1 | 1 |