HWF1686YC
L-Band Power FET Via Hole Chip
Autumn 2002 V1
Features
Output Power:
P
1dB
=30dBm(typ.)
High Gain:
G
L
=16dB(typ.)
High Efficiency:
PAE=45%(typ.)
High Linearity:
IP
3
=45dBm(typ.)
Outline Dimensions
650
Description
Designed for various RF and Microwave
applications,
the
HWF1686YC
is
a
medium power GaAs MESFET chip with 2
mm gate width and 0.7
µm
gate length.
Unit :
m
Thickness: 53 5
All Bond Pads:
60 x 60
±
Absolute Maximum Ratings
V
DS
V
GS
I
D
I
G
T
CH
T
STG
P
T
*
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Channel Temperature
Storage Temperature
Power Dissipation
+15V
-5V
I
DSS
2mA
175
°
C
-65 to +175
°
C
5.4W
0 .0
0 .0
5 8 .5
* mounted on an infinite heat sink
Electrical Specifications
(T
A
=25
°
C)
Symbol
I
DSS
V
P
Parameters
Saturated Drain Current
Pinch-off Voltage
Transconductance
Thermal Resistance
Output Power @1dB Gain
Linear Power Gain
Power-added Efficiency (P
out
= P
1dB
)
Third-order Intercept Point
*
V
DS
=3V, V
GS
=0V
V
DS
=3V, I
DS
=20mA
V
DS
=3V, I
DS
=200mA
Channel to Case
V
DS
=10V
I
DS
=0.5I
DSS
f=2.4GHz
g
m
R
th
P
1dB
G
L
PAE
IP
3
*: Single carrier level 15dBm, 1 MHz apart between 2 tones, current adjusted for best IP
3
Bonding Manner
Gate, drain, pad: 1 wire on each pad
Source pad: 2 wires on each side
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
Email:
sales@hw.com.tw
All specifications are subject to change without notice.
μ
S o u rce
435
1
3
215
2
4
S o u rce
3 4 4 .5
400
Bond Pads:
1 to 2: Gate
3 to 4: Drain
Source electrodes are connected
to the bottom of the chip by
via-holes
Conditions
Units
mA
V
mS
°
C/W
dBm
dB
%
dBm
Min.
300
-3.5
-
-
29.0
15
-
-
Typ.
400
-2.0
200
20
30.0
16
45
45
Max.
600
-1.5
-
28
-
-
-
-
HWF1686YC
L-Band Power FET Via Hole Chip
Autumn 2002 V1
Typical Performance (T
A
=25
°
C)
Output Power, Efficiency & Gain vs. Input Power
V
DS
=10V, I
DS
=0.5I
DSS
f=2.4GHz
40
35
50
η
add
40
P
out
(dBm)
30
25
20
Gain (dB)
15
10
20
10
5
0
0
2
4
6
8
10
12
14
16
18
20
0
Power Derating Curve
6
5
4
3
2
1
0
0
25
50
75
100
125
150
175
200
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
Email:
sales@hw.com.tw
All specifications are subject to change without notice.
η
add
P
out
30
(%)
HWF1686YC
L-Band Power FET Via Hole Chip
Autumn 2002 V1
S-Parameters
(Common Source, T
A
=25
°
C, V
DS
=10V, I
DS
=0.5I
DSS
)
Freq
(GHz)
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
S
11
Mag.
0.954
0.951
0.961
0.948
0.952
0.935
0.919
0.923
0.912
0.910
0.906
0.897
0.895
0.891
0.890
0.885
0.881
0.882
0.877
0.875
0.872
0.872
0.871
0.868
0.868
0.866
0.864
0.868
0.875
0.885
0.893
0.900
0.906
S
21
Ang.
Mag.
7.226
6.984
6.840
6.627
6.439
6.249
6.062
5.877
5.683
5.500
5.323
5.155
4.985
4.828
4.675
4.527
4.377
4.247
4.127
4.004
3.884
3.770
3.667
3.563
3.468
3.376
2.637
2.131
1.762
1.482
1.256
1.076
0.929
S
12
Ang.
Mag.
0.014
0.017
0.019
0.021
0.022
0.024
0.026
0.027
0.028
0.029
0.030
0.032
0.032
0.033
0.033
0.034
0.034
0.035
0.035
0.035
0.035
0.036
0.036
0.036
0.036
0.036
0.035
0.034
0.034
0.035
0.037
0.039
0.042
S
22
Ang.
Mag.
0.447
0.437
0.429
0.419
0.413
0.410
0.402
0.396
0.392
0.386
0.384
0.382
0.376
0.372
0.369
0.368
0.363
0.363
0.361
0.359
0.356
0.354
0.354
0.352
0.354
0.351
0.360
0.387
0.429
0.479
0.533
0.587
0.632
Ang.
-19.70
-18.31
-21.07
-21.92
-23.65
-25.63
-27.73
-29.80
-32.16
-33.77
-35.69
-37.44
-39.23
-40.59
-42.16
-43.84
-45.32
-47.31
-48.47
-50.11
-51.75
-53.12
-54.99
-56.45
-58.18
-59.75
-76.06
-91.99
-106.97
-120.20
-131.61
-141.27
-149.91
-34.67
-43.74
-49.94
-56.83
-62.89
-68.75
-74.49
-79.55
-84.11
-88.83
-93.24
-97.51
-101.56
-105.51
-109.19
-112.59
-115.71
-119.35
-122.09
-124.98
-127.84
-130.32
-132.93
-135.21
-137.65
-139.91
-158.30
-171.82
177.44
168.64
161.14
154.58
148.43
155.21
150.54
146.64
142.25
138.64
134.81
130.93
127.63
124.29
121.14
118.15
115.23
112.39
109.72
107.11
104.59
102.10
99.79
97.46
95.30
93.16
91.12
88.97
87.05
85.04
83.18
65.91
50.92
37.01
24.35
12.37
1.23
-9.39
69.81
67.23
64.68
61.63
58.12
56.88
53.94
51.75
49.51
47.65
45.96
44.48
42.75
40.58
39.47
38.99
37.41
36.06
35.40
34.21
33.53
32.95
32.08
31.42
30.69
30.10
28.12
29.66
33.69
37.70
40.81
41.73
40.54
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
Email:
sales@hw.com.tw
All specifications are subject to change without notice.
