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IMH9AFRAT110

Small Signal Bipolar Transistor,

器件类别:分立半导体    晶体管   

厂商名称:ROHM(罗姆半导体)

厂商官网:https://www.rohm.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
ROHM(罗姆半导体)
包装说明
,
Reach Compliance Code
compliant
峰值回流温度(摄氏度)
NOT SPECIFIED
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
IMH9A FRA
General purpose (Dual digital transistors)
Datasheet
AEC-Q101 Qualified
l
Outline
Parameter
V
CC
I
C(MAX.)
R
1
R
2
DTr1 and DTr2
50V
100mA
10kΩ
47kΩ
SOT-457
SC-74
 
 
 
l
Features
1)Two DTC114Y chips in a SMT6 package.
2)Mounting possible with SMT3 automatic
 
mounting machines.
3)Transistor elements are independent,
 
eliminating interference.
4)Mounting cost and area can be cut in half.
l
Application
INVERTER, INTERFACE, DRIVER
ot
N
l
Packaging specifications
Part No.
ec
N
ew om
m
D
es en
ig de
ns d
f
SMT6
 
     
               
l
Inner circuit
R
                                           
Package
SOT-457
(SMT6)
Package
size
2928
Taping
code
T110
Reel size Tape width
(mm)
(mm)
180
8
IMH9A FRA
                                                                                         
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/5
or
 
 
 
Basic
ordering
unit.(pcs)
3000
Marking
H9
20161012 - Rev.001
IMH9A FRA
 
        
Datasheet
l
Absolute maximum ratings
(T
a
= 25°C)
<For DTr1 and DTr2 in common>
Parameter
Supply voltage
Input voltage
Output current
Collector current
Power dissipation
Symbol
V
CC
V
IN
I
O
I
C(MAX)*1
P
D*2*3
T
j
Values
50
-6 to 40
70
Unit
V
V
mA
mA
ec
N
ew om
m
D
es en
ig de
ns d
f
300
150
T
stg
-55 to +150
Values
Typ.
-
-
Symbol
V
I(off)
Conditions
Min.
-
V
CC
= 5V, I
O
= 100μA
V
O
= 0.3V, I
O
= 1mA
V
I(on)
1.4
-
-
-
V
O(on)
I
I
I
O
= 5mA, I
I
= 0.25mA
V
I
= 5V
100
-
-
-
I
O(off)
G
I
V
CC
= 50V, V
I
= 0V
V
O
= 5V, I
O
= 5mA
-
-
68
7
R
1
10
R
2
/R
1
f
T*1
3.7
-
4.7
V
CE
= 10V, I
E
= -5mA,
f = 100MHz
250
 
Junction temperature
Range of storage temperature
l
Electrical characteristics
(T
a
= 25°C)
<For DTr1 and DTr2 in common>
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
R
or
100
Max.
0.3
-
300
880
500
-
13
5.7
-
mW/TOTAL
Unit
V
mV
μA
nA
-
-
MHz
N
ot
Resistance ratio
Input resistance
Transition frequency
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land
*3 200mW per element must not be exceeded.
                                            
                                        
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
2/5
20161012 - Rev.001
IMH9A FRA
 
 
        
Datasheet
l
Electrical characteristic curves
(T
a
= 25°C)
<For DTr1 and DTr2 in common>
Fig.1 Input Voltage vs. Output Current
    
(ON Characteristics)
Fig.2 Output Current vs. Input Voltage
    
(OFF Characteristics)
Fig.3 Output Current vs. Output Voltage
N
ot
                                                                                           
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
ec
N
ew om
m
D
es en
ig de
ns d
f
3/5
Fig.4 DC Current Gain vs. Output Current
R
or
20161012 - Rev.001
IMH9A FRA
 
 
        
Datasheet
l
Electrical characteristic curves
(T
a
= 25°C)
<For DTr1 and DTr2 in common>
Fig.5 Output Voltage vs. Output Current
N
ot
                                                                                           
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
ec
N
ew om
m
D
es en
ig de
ns d
f
4/5
R
or
20161012 - Rev.001
IMH9A FRA
l
Dimensions
 
        
Datasheet
N
ot
                                                                                           
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
ec
N
ew om
m
D
es en
ig de
ns d
f
5/5
R
or
20161012 - Rev.001
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