IRF7413APbF
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PD - 95303
Generation V Technology
Ultra Low On-Resistance
N-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
Lead-Free
HEXFET
®
Power MOSFET
S
S
S
G
1
2
3
4
8
7
A
A
D
D
D
D
V
DSS
= 30V
R
DS(on)
= 0.0135Ω
6
5
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infra red, or wave soldering techniques. Power dissipation
of greater than 0.8W is possible in a typical PCB mount
application.
Top View
SO-8
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
V
GS
E
AS
dv/dt
T
J,
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
12
8.4
58
2.5
0.02
± 20
260
5.0
-55 to + 150
Units
A
W
mW/°C
V
mJ
V/ns
°C
Thermal Resistance Ratings
Parameter
R
θJA
Maximum Junction-to-Ambient
Typ.
Max.
50
Units
°C/W
9/30/04
IRF7413APbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Min.
30
1.0
10
Typ. Max. Units
Conditions
V
V
GS
= 0V, I
D
= 250µA
0.034 V/°C Reference to 25°C, I
D
= 1mA
0.0135
V
GS
= 10V, I
D
= 6.6A
Ω
0.020
V
GS
= 4.5V, I
D
= 3.3A
V
V
DS
= V
GS
, I
D
= 250µA
S
V
DS
= 10V, I
D
= 3.7A
1.0
V
DS
= 24V, V
GS
= 0V
µA
25
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
-100
V
GS
= -20V
nA
100
V
GS
= 20V
52
79
I
D
= 7.3A
6.1 9.2
nC V
DS
= 24V
16
23
V
GS
= 10 V, See Fig. 6 and 9
8.6
V
DD
= 15V
50
I
D
= 7.3A
ns
52
R
G
= 6.2Ω
46
R
D
= 2.0Ω, See Fig. 10
1800
V
GS
= 0V
680
pF
V
DS
= 25V
240
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
74
200
3.1
58
1.0
110
300
V
ns
nC
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 6.6A, V
GS
= 0V
T
J
= 25°C, I
F
= 7.3A
di/dt = 100A/µs
D
G
S
Notes:
Repetitive rating; pulse width limited by
Starting T
J
= 25°C, L =9.8mH
T
J
≤
150°C
max. junction temperature. ( See fig. 11 )
Pulse width
≤
300µs; duty cycle
≤
2%.
Use IRF7413 data and test conditions
Surface mounted on FR-4 board, t
≤
10sec.
R
G
= 25Ω, I
AS
=7.3A. (See Figure 12)
I
SD
≤
7.3A, di/dt
≤
100A/µs, V
DD
≤
V
(BR)DSS
,
IRF7413APbF
100
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
100
I D , Drain-to-Source Current (A)
I D, Drain-to-Source Current (A)
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
10
10
3.0V
3.0V
1
0.1
1
20µs PULSE WIDTH
T
J
= 25°C
A
10
1
0.1
1
20µs PULSE WIDTH
T
J
= 150°C
A
10
V DS , Drain-to-Source Voltage (V)
V DS Drain-to-Source Voltage (V)
,
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 7.3A
I
D
, Drain-to-Source Current (A)
1.5
T
J
= 150°C
T
J
= 25°C
10
1.0
0.5
1
3.0
3.5
V
DS
= 10V
20µs PULSE WIDTH
4.0
4.5
A
0.0
-60
-40
-20
0
20
40
60
80
V
GS
= 10V
100 120 140 160
A
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
IRF7413APbF
3200
2800
2400
2000
1600
1200
800
400
0
1
10
100
C
oss
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
iss
C
oss
= C
ds
+ C
gd
20
I
D
= 7.3A
V
DS
= 24V
V
DS
= 15V
16
C, Capacitance (pF)
12
8
C
rss
4
A
0
0
10
20
30
FOR TEST CIRCUIT
SEE FIGURE 9
40
50
60
A
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T
J
= 150°C
10
I
D
, Drain Current (A)
T
J
= 25°C
100
100us
10
1ms
1
0.4
1.2
2.0
2.8
V
GS
= 0V
A
3.6
1
0.1
T
A
= 25 ° C
T
J
= 150 ° C
Single Pulse
1
10
10ms
100
V
SD
, Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
IRF7413APbF
Q
G
V
DS
V
GS
R
G
10V
R
D
10V
V
G
Q
GS
Q
GD
D.U.T.
+
-
V
DD
Charge
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 9a.
Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
Fig 10a.
Switching Time Test Circuit
V
DS
50KΩ
12V
.2µF
.3µF
90%
+
V
-
DS
D.U.T.
V
GS
3mA
10%
V
GS
t
d(on)
I
G
I
D
t
r
t
d(off)
t
f
Current Sampling Resistors
Fig 9b.
Gate Charge Test Circuit
100
Fig 10b.
Switching Time Waveforms
Thermal Response (Z
thJA
)
D = 0.50
0.20
0.10
0.05
0.02
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.1
1
10
100
10
0.1
0.0001
0.001
0.01
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
