Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8
厂商名称:International Rectifier ( Infineon )
厂商官网:http://www.irf.com/
下载文档型号 | IRF7805Q | IRF7805HR |
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描述 | Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | Power Field-Effect Transistor, 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 |
厂商名称 | International Rectifier ( Infineon ) | International Rectifier ( Infineon ) |
零件包装代码 | SOIC | SOIC |
包装说明 | SMALL OUTLINE, R-PDSO-G8 | SOP-8 |
针数 | 8 | 8 |
Reach Compliance Code | unknow | compliant |
ECCN代码 | EAR99 | EAR99 |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 30 V | 30 V |
最大漏源导通电阻 | 0.011 Ω | 0.011 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | MS-012AA | MS-012AA |
JESD-30 代码 | R-PDSO-G8 | R-PDSO-G8 |
元件数量 | 1 | 1 |
端子数量 | 8 | 8 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | SMALL OUTLINE |
极性/信道类型 | N-CHANNEL | N-CHANNEL |
最大脉冲漏极电流 (IDM) | 100 A | 100 A |
表面贴装 | YES | YES |
端子形式 | GULL WING | GULL WING |
端子位置 | DUAL | DUAL |
晶体管应用 | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON |