型号
- 型号
- 关键词
Power Field-Effect Transistor, 4.6A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, FULL PACK-3
厂商名称：Vishay(威世)
下载文档| 型号 | IRFI840G-105 | IRFI840G-110PBF |
|---|---|---|
| 描述 | Power Field-Effect Transistor, 4.6A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, FULL PACK-3 | Power Field-Effect Transistor, 4.6A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, FULL PACK-3 |
| 厂商名称 | Vishay(威世) | Vishay(威世) |
| 零件包装代码 | TO-220AB | TO-220AB |
| 包装说明 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
| 针数 | 3 | 3 |
| Reach Compliance Code | unknown | unknown |
| 雪崩能效等级（Eas） | 370 mJ | 370 mJ |
| 外壳连接 | ISOLATED | ISOLATED |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 500 V | 500 V |
| 最大漏极电流 (ID) | 4.6 A | 4.6 A |
| 最大漏源导通电阻 | 0.85 Ω | 0.85 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-220AB | TO-220AB |
| JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 |
| 元件数量 | 1 | 1 |
| 端子数量 | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 18 A | 18 A |
| 认证状态 | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | SINGLE | SINGLE |
| 晶体管应用 | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON |
| Base Number Matches | 1 | 1 |