PD - 97529A
IRLML6246TRPbF
V
DS
V
GS Max
R
DS(on) max
(@V
GS
= 4.5V)
HEXFET
®
Power MOSFET
20
± 12
46
66
V
V
m
m
G 1
3 D
S
2
:
:
R
DS(on) max
(@V
GS
= 2.5V)
Micro3
TM
(SOT-23)
IRLML6246TRPbF
Application(s)
•
Load/ System Switch
Features and Benefits
Features
Industry-standard SOT-23 Package
RoHS compliant containing no lead, no bromide and no halogen
results in
Benefits
Multi-vendor compatibility
Environmentally friendly
Absolute Maximum Ratings
Symbol
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
T
J,
T
STG
Parameter
Drain-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
20
4.1
3.3
16
1.3
0.8
0.01
± 12
-55 to + 150
Units
V
A
W
W/°C
V
°C
Thermal Resistance
Symbol
R
θJA
R
θJA
Parameter
Junction-to-Ambient
e
Typ.
–––
–––
Max.
100
99
Units
°C/W
Junction-to-Ambient (t<10s)
f
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes
through
are on page 10
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1
10/12/12
IRLML6246TRPbF
Electric Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
ΔV
(BR)DSS
/ΔT
J
R
DS(on)
V
GS(th)
I
DSS
Drain-to-Source Leakage Current
I
GSS
R
G
gfs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Min. Typ. Max. Units
20
–––
–––
–––
0.5
–––
–––
–––
–––
–––
–––
10
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.03
30
45
0.8
–––
–––
–––
–––
–––
4.0
–––
3.5
0.26
1.7
3.6
4.9
11
6.0
290
64
41
–––
–––
46
66
1.1
1.0
10
150
100
-100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
ns
nC
nA
Ω
S
μA
V
Conditions
V
GS
= 0V, I
D
= 250μA
V
GS
= 4.5V, I
D
= 4.1A
V
GS
= 2.5V, I
D
V
DS
= V
GS
, I
D
= 5μA
V
DS
=16V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V, T
J
= 55°C
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
V
GS
= 12V
V
GS
= -12V
V
DS
= 10V, I
D
= 4.1A
I
D
= 4.1A
V
DS
=10V
V
GS
= 4.5V
V
DD
=10V
I
D
= 1.0A
R
G
= 6.8Ω
V
GS
= 4.5V
V
GS
= 0V
V
DS
= 16V
ƒ = 1.0MHz
V/°C Reference to 25°C, I
D
= 1mA
mΩ
V
d
= 3.3A
d
d
d
Source - Drain Ratings and Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
8.6
2.8
1.3
A
16
1.2
13
4.2
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 4.1A, V
GS
= 0V
T
J
= 25°C, V
R
= 15V, I
F
=1.3A
di/dt = 100A/μs
G
S
D
Ã
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
d
d
2
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IRLML6246TRPbF
100
≤
60μs PULSE WIDTH
Tj = 25°C
ID, Drain-to-Source Current (A)
100
≤
60μs PULSE WIDTH
Tj = 150°C
ID, Drain-to-Source Current (A)
10
10
1
1.5V
0.1
TOP
VGS
10V
4.5V
3.0V
2.5V
2.3V
2.0V
1.8V
1.5V
1
TOP
1.5V
BOTTOM
BOTTOM
VGS
10V
4.5V
3.0V
2.5V
2.3V
2.0V
1.8V
1.5V
0.01
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
ID = 4.1A
VGS = 4.5V
1.5
10
TJ = 150°C
1
TJ = 25°C
V DS = 15V
0.1
1.0
1.5
2.0
≤
60μs PULSE WIDTH
2.5
3.0
3.5
1.0
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
V GS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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IRLML6246TRPbF
10000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
14.0
ID= 4.1A
V GS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
V DS= 16V
V DS= 10V
V DS= 4.0V
C, Capacitance (pF)
1000
Ciss
Coss
Crss
100
10
1
10
V DS, Drain-to-Source Voltage (V)
100
0.0
2.0
4.0
6.0
8.0
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100μsec
1msec
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
10
10
1
TJ = 150°C
1
TJ = 25°C
0
V GS = 0V
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V SD, Source-to-Drain Voltage (V)
0.1
10msec
TA = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
100
0.01
V DS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRLML6246TRPbF
5.0
V
DS
4.0
R
D
V
GS
R
G
D.U.T.
+
ID , Drain Current (A)
3.0
-
V
DD
V
GS
2.0
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
1.0
Fig 10a.
Switching Time Test Circuit
V
DS
0.0
25
50
75
100
125
150
90%
TA , Ambient Temperature (°C)
Fig 9.
Maximum Drain Current Vs.
Ambient Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
1000
Thermal Response ( Z thJA )
100
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
1
0.1
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
10
0.01
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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