IRLR2908TR,IRLR2908TR pdf中文资料,IRLR2908TR引脚图,IRLR2908TR电路-Datasheet-电子工程世界

文档预览

PD - 95552B

Features

HEXFET

Power MOSFET

IRLR2908PbF

IRLU2908PbF

DSS

= 80V

DS(on)

= 28mΩ

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

= 30A

Description

This HEXFET ® Power MOSFET utilizes the latest processing techniques

to achieve extremely low on-resistance per silicon area. Additional features

of this HEXFET power MOSFET are a 175°C junction operating temperature,

low RθJC, fast switching speed and improved repetitive avalanche rating.

These features combine to make this design an extremely efficient and

reliable device for use in a wide variety of applications.

The D-Pak is designed for surface mounting using vapor phase, infrared,

or wave soldering techniques. The straight lead version (IRFU series) is

for through-hole mounting applications. Power dissipation levels up to 1.5

watts are possible in typical surface mount applications.

I-Pak

D-Pak

IRLU2908PbF

IRLR2908PbF

Absolute Maximum Ratings

Parameter

@ T

= 25°C

@ T

= 100°C

@ T

= 25°C

(tested)

dv/dt

STG

Continuous Drain Current, V

@ 10V (Silicon Limited)

Continuous Drain Current, V

@ 10V (See Fig. 9)

Continuous Drain Current, V

@ 10V

(Package Limited)

Pulsed Drain Current

Max.

150

120

0.77

± 16

180

250

See Fig.12a,12b,15,16

2.3

-55 to + 175

300 (1.6mm from case )

Units

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

W/°C

V/ns

°C

Peak Diode Recovery dv/dt

Repetitive Avalanche Energy

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Avalanche Current

Thermal Resistance

θJC

θJA

Parameter

Junction-to-Case

Junction-to-Ambient (PCB Mount)

Junction-to-Ambient

Typ.

Max.

1.3

110

Units

°C/W

jÃ

–––

www.irf.com

10/01/10

IRLR/U2908PbF

Static @ T

= 25°C (unless otherwise specified)

Parameter

(BR)DSS

∆ΒV

DSS

/∆T

DS(on)

GS(th)

gfs

DSS

GSS

d(on)

d(off)

iss

oss

rss

oss

eff.

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Forward Transconductance

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Internal Drain Inductance

Internal Source Inductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Output Capacitance

Effective Output Capacitance

Min. Typ. Max. Units

–––

1.0

–––

0.085

22.5

–––

6.0

4.5

7.5

1890

260

1920

170

310

–––

2.5

–––

250

200

-200

9.1

–––

µA

mΩ

Conditions

= 0V, I

= 250µA

= 10V, I

= 23A

= 4.5V, I

V/°C Reference to 25°C, I

= 1mA

= V

, I

= 250µA

= 25V, I

= 23A

= 80V, V

= 0V

= 20A

= 80V, V

= 0V, T

= 125°C

= 16V

= -16V

= 23A

= 64V

= 4.5V

= 40V

= 23A

= 8.3Ω

= 4.5V

Between lead,

6mm (0.25in.)

from package

and center of die contact

= 0V

= 25V

ƒ = 1.0MHz, See Fig. 5

= 0V, V

= 1.0V, ƒ = 1.0MHz

= 0V, V

= 64V, ƒ = 1.0MHz

= 0V, V

= 0V to 64V

Diode Characteristics

Parameter

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode)

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn-On Time

Min. Typ. Max. Units

–––

210

150

1.3

110

310

Conditions

MOSFET symbol

showing the

integral reverse

p-n junction diode.

= 25°C, I

= 23A, V

= 0V

= 25°C, I

= 23A, V

= 25V

di/dt = 100A/µs

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes

through

are on page 11

HEXFET

is a registered trademark of International Rectifier.

www.irf.com

IRLR/U2908PbF

1000

TOP

VGS

15V

10V

4.5V

4.0V

3.5V

3.0V

2.7V

2.5V

1000

TOP

VGS

15V

10V

4.5V

4.0V

3.5V

3.0V

2.7V

2.5V

ID, Drain-to-Source Current (A)

100

ID, Drain-to-Source Current (A)

100

BOTTOM

2.5V

0.1

20µs PULSE WIDTH

Tj = 25°C

0.01

0.1

100

0.1

0.01

0.1

20µs PULSE WIDTH

Tj = 175°C

100

VDS, Drain-to-Source Voltage (V)

Fig 1.

Typical Output Characteristics

Fig 2.

Typical Output Characteristics

1000

G FS , Forward Transconductance (S)

ID, Drain-to-Source Current

(Α

)

TJ = 25°C

100

T J = 175°C

T J = 25°C

T J = 175°C

VDS = 25V

20µs PULSE WIDTH

VDS = 10V

20µs PULSE WIDTH

VGS , Gate-to-Source Voltage (V)

ID, Drain-to-Source Current (A)

Fig 3.

Typical Transfer Characteristics

Fig 4.

Typical Forward Transconductance

vs. Drain Current

www.irf.com

IRLR/U2908PbF

100000

VGS = 0V,

f = 1 MHZ

Ciss = C gs + Cgd, C ds SHORTED

Crss = Cgd

Coss = Cds + Cgd

5.0

ID= 23A

VGS , Gate-to-Source Voltage (V)

4.0

VDS= 64V

VDS= 40V

VDS= 16V

10000

C, Capacitance(pF)

Ciss

1000

3.0

Coss

100

2.0

Crss

1.0

100

0.0

VDS, Drain-to-Source Voltage (V)

Q G Total Gate Charge (nC)

Fig 5.

Typical Capacitance vs.

Drain-to-Source Voltage

Fig 6.

Typical Gate Charge vs.

Gate-to-Source Voltage

1000.00

1000

OPERATION IN THIS AREA

LIMITED BY R DS(on)

100.00

T J = 175°C

ID, Drain-to-Source Current (A)

ISD, Reverse Drain Current (A)

100

100µsec

1msec

Tc = 25°C

Tj = 175°C

Single Pulse

0.1

100

1000

VDS, Drain-to-Source Voltage (V)

10.00

1.00

T J = 25°C

10msec

0.10

0.2

0.4

0.6

0.8

1.0

1.2

VGS = 0V

1.4

1.6

1.8

VSD, Source-to-Drain Voltage (V)

Fig 7.

Typical Source-Drain Diode

Forward Voltage

Fig 8.

Maximum Safe Operating Area

www.irf.com

IRLR/U2908PbF

ID, Drain Current (A)

RDS(on) , Drain-to-Source On Resistance

3.0

ID = 38A

2.5

VGS = 4.5V

100

125

150

175

T C , Case Temperature (°C)

2.0

(Normalized)

1.5

1.0

0.5

0.0

-60 -40 -20 0

20 40 60 80 100 120 140 160 180

T J , Junction Temperature (°C)

Fig 9.

Maximum Drain Current vs.

Case Temperature

Fig 10.

Normalized On-Resistance

vs. Temperature

Thermal Response ( Z thJC )

D = 0.50

0.20

0.10

0.1

0.05

0.02

0.01

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty factor D =

2. Peak T

/ t

= P

x Z

thJC

0.001

1E-006

1E-005

0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

Fig 11.

Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com

参数对比

与IRLR2908TR相近的元器件有：IRLR2908、IRLR2908TRL、IRLR2908TRRPBF、IRLR2908TRR。描述及对比如下：

型号	IRLR2908TR	IRLR2908	IRLR2908TRL	IRLR2908TRRPBF	IRLR2908TRR
描述	Power Field-Effect Transistor, 30A I(D), 80V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3	AUTOMOTIVE MOSFET	Power Field-Effect Transistor, 30A I(D), 80V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3	Power Field-Effect Transistor, 30A I(D), 80V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3	Power Field-Effect Transistor, 30A I(D), 80V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
是否Rohs认证	不符合	不符合	不符合	符合	不符合
厂商名称	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
零件包装代码	TO-252AA	TO-252AA	TO-252AA	TO-252AA	TO-252AA
包装说明	SMALL OUTLINE, R-PSSO-G2	PLASTIC, DPAK-3	SMALL OUTLINE, R-PSSO-G2	LEAD FREE, PLASTIC, DPAK-3	SMALL OUTLINE, R-PSSO-G2
针数	3	3	3	3	3
Reach Compliance Code	compliant	unknow	compliant	unknown	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99
其他特性	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
雪崩能效等级（Eas）	250 mJ	250 mJ	250 mJ	250 mJ	250 mJ
外壳连接	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	80 V	80 V	80 V	80 V	80 V
最大漏极电流 (Abs) (ID)	30 A	30 A	30 A	30 A	30 A
最大漏极电流 (ID)	30 A	30 A	30 A	30 A	30 A
最大漏源导通电阻	0.028 Ω	0.028 Ω	0.028 Ω	0.028 Ω	0.028 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-252AA	TO-252AA	TO-252AA	TO-252AA	TO-252AA
JESD-30 代码	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2
JESD-609代码	e0	e0	e0	e3	e0
湿度敏感等级	1	1	1	1	1
元件数量	1	1	1	1	1
端子数量	2	2	2	2	2
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	175 °C	175 °C	175 °C	175 °C	175 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
峰值回流温度（摄氏度）	245	245	260	260	260
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大功率耗散 (Abs)	120 W	120 W	120 W	120 W	120 W
最大脉冲漏极电流 (IDM)	150 A	150 A	150 A	150 A	150 A
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES	YES
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	MATTE TIN OVER NICKEL	Tin/Lead (Sn/Pb)
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
处于峰值回流温度下的最长时间	30	30	NOT SPECIFIED	30	NOT SPECIFIED
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	-	1	1	1
是否无铅	-	-	含铅	不含铅	含铅