HiPerFAST
TM
IGBT
IXGH39N60B
IXGH39N60BD1
IXGT39N60B
IXGT39N60BD1
V
CES
I
C25
V
CE(sat)
t
fi
=
=
=
=
600 V
76 A
1.7 V
200 ns
Preliminary data
(D1)
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 22
Ω
Clamped inductive load
T
C
= 25°C
Maximum Ratings
600
600
±20
±30
76
39
152
I
CM
= 76
@ 0.8 V
CES
200
-55 ... +150
150
-55 ... +150
300
V
V
V
V
A
A
A
A
W
°C
°C
°C
°C
TO-268
(IXGT)
G
E
C (TAB)
TO-247 AD
(IXGH)
G
C (TAB)
C
E
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
International standard packages
JEDEC TO-247 AD & TO-268
High current handling capability
Newest generation HDMOS
TM
process
MOS Gate turn-on
- drive simplicity
Applications
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M
d
Weight
Mounting torque (M3)
TO-247
1.13/10Nm/lb.in.
TO-247 AD
TO-268
6
4
g
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Min. Typ. Max.
39N60B
39N60BD1
39N60B
39N60BD1
39N60B
39N60B
39N60BD1
600
600
2.5
2.5
5.0
5.0
200
1
3
±100
1.7
V
V
V
µA
mA
mA
nA
V
BV
CES
V
GE(th)
I
CES
I
C
I
C
I
C
I
C
= 250
µA,
V
GE
= 0 V
= 750
µA
= 250
µA,
V
CE
= V
GE
= 500
µA
PFC circuits
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
Advantages
High power density
Very fast switching speeds for high
frequency applications
V
CE
=
0.8 • V
CES
T
J
= 25°C
T
J
= 125°C
V
GE
= 0 V
T
J
= 125°C
I
GES
V
CE(sat)
V
CE
= 0 V, V
GE
=
±20
V
I
C
=
I
90
,
V
GE
= 15 V
© 2003 IXYS All rights reserved
DS97548A(02/03)
IXGH39N60B
IXGT39N60B
IXGH39N60BD1 IXGT39N60BD1
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
19
28
2750
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
39N60B
39N60BD1
200
240
50
110
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
Inductive load, T
J
= 25°C
°
I
C
= I
C90
, V
GE
= 15 V
V
CE
= 0.8 V
CES
, R
G
= R
off
= 4.7
Ω
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 • V
CES
,
higher T
J
or increased R
G
Inductive load, T
J
= 125°C
°
I
C
= I
C90
, V
GE
= 15 V
V
CE
= 0.8 V
CES
, R
G
= R
off
= 4.7
Ω
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 • V
CES
,
higher T
J
or increased R
G
25
40
25
30
250
200
4.0
25
30
0.3
360
350
6.0
500
360
150
35
75
S
∅
P
TO-247 AD Outline
g
fs
C
ies
C
oes
C
res
Q
G
Q
GE
Q
GC
t
d(on)
t
ri
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
I
C
= I
C90
; V
CE
= 10 V,
Pulse test, t
≤
300
µs,
duty cycle
≤
2 %
pF
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
Dim.
e
6.0 mJ
ns
ns
mJ
ns
ns
mJ
0.62 K/W
Millimeter
Min. Max.
A
4.7
5.3
A
1
2.2
2.54
A
2
2.2
2.6
b
1.0
1.4
1.65
2.13
b
1
b
2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P
3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
0.25
K/W
Reverse Diode (FRED)
Symbol
V
F
I
RM
t
rr
R
thJC
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
T
J
=150°C
T
J
= 25°C
typ.
max.
1.6
2.5
V
V
A
ns
ns
0.9 K/W
I
F
= I
C90
, V
GE
= 0 V, Pulse test
t
≤
300
µs,
duty cycle d
≤
2 %
I
F
= I
C90
, V
GE
= 0 V, -di
F
/dt = 100 A/µs
6
V
R
= 100 V
T
J
= 100°C 100
I
F
= 1 A; -di/dt = 100 A/µs; V
R
= 30 V T
J
= 25°C
25
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
IXGH39N60B
IXGT39N60B
IXGH39N60BD1 IXGT39N60BD1
Fig. 1. Saturation Voltage
Characteristics @ 25 Deg. C
40
35
30
I
C
- Amperes
25
20
15
10
5
0
0.4
0.8
1.2
1.6
V
CE
- Volts
2
2.4
5V
V
GE
=15V
13V
11V
9V
Fig. 2. Extended Output
Characteristics @ 25 Deg. C
160
140
120
I
C
- Amperes
V
GE
=15V
13V
11V
7V
100
80
60
40
20
0
0
1
2
3
9V
7V
5V
4
5
V
CE
- Volts
Fig. 3. Saturation Voltage
Characteristics @ 125 Deg. C
100
80
I
C
- Amperes
60
40
20
5V
V
GE
=15V
13V
11V
9V
V
CE(SAT)
- Normalized
Fig. 4. Temperature Dependence of
V
CE(SAT)
1.45
1.3
1.15
1
0.85
I
C
=19.5A
I
C
=39A
I
C
=78A
7V
0
0.7
0
1
2
3
4
5
-50
-25
0
25
50
75
100 125 150
V
CE
- Volts
T
J
- Degrees Centigrade
Fig. 5. BV
CES
& V
(GE)TH
vs. Junction
Temperature
1.2
BV
CES
& V
(GE)TH
- Normalized
Fig. 6. Admittance
100
1.1
1
0.9
0.8
0.7
-50
-25
V
GE(TH)
BV
CES
80
I
C
- Amperes
60
40
20
0
T
J
= 125
°
C
25
°
C
-40
°
C
0
25
50
75
100 125 150
4
5
6
7
8
9
T
J
- Degrees Centigrade
V
GE
- Volts
© 2003 IXYS All rights reserved
IXGH39N60B
IXGT39N60B
IXGH39N60BD1 IXGT39N60BD1
Fig. 7. Transconductance
50
40
G
FS
- Siemens
30
20
10
0
0
20
40
60
80
I
C
- Amperes
100
120
T
J
= -40
º
C
25ºC
125ºC
Fig. 8. Dependence of E
OFF
on I
C
16
14
E
OFF
- millijoules
12
10
8
6
4
2
10
30
50
I
C
- Amperes
70
90
R
G
= 5 Ohms
T
J
= 125
º
C
V
GE
= 15V
V
CE
= 480V
R
G
= 56 Ohms
Fig. 9. Dependence of E
OFF
on R
G
16
14
E
OFF
- milliJoules
12
E
OFF
- millijoules
10
8
6
4
2
0
0
10
20
30
R
G
- Ohm s
40
50
60
I
C
= 19.5A
T
J
= 125ºC
V
GE
= 15V
V
CE
= 480V
I
C
= 39A
I
C
= 78A
12
9
6
3
0
18
15
Fig. 10. Dependence of E
OFF
on
Temperature
Solid lines - R
G
= 5 Ohms
Dashed lines - R
G
= 56 Ohms
V
GE
= 15V
V
CE
= 480V
I
C
=
78A
I
C
=
39A
I
C
=
19.5A
0
25
50
75
100
125
150
T
J
- Degrees Centigrades
Fig. 11. Gate Charge
15
12
V
CE
- Volts
9
6
3
0
0
20
40
60
80
Q
G
- nanocoulombs
100
120
V
CE
=300V
I
C
=20A
Fig. 12. Transient Thermal Response
1
R
(TH)JC
(C/W)
I
G
=10mA
0.1
0.01
1
10
100
Pulse Width - milliseconds
1000
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
IXGH39N60B
IXGT39N60B
IXGH39N60BD1 IXGT39N60BD1
60
A
50
I
F
40
1000
T = 100°C
VJ
V
R
= 300V
nC
Q
r
800
30
A
25
I
RM
20
15
400
20
10
T
VJ
= 100°C
V
R
= 300V
I
F
= 60A
I
F
= 30A
I
F
= 15A
I
F
= 60A
I
F
= 30A
I
F
= 15A
T
VJ
=150°C
30
600
T
VJ
=100°C
T
VJ
=25°C
10
0
0
1
2
V
F
3 V
200
5
0
A/µs 1000
-di
F
/dt
0
200
400
600 A/µs 1000
800
-di
F
/dt
0
100
Fig. 12 Forward current I
F
versus V
F
Fig. 13 Reverse recovery charge Q
r
versus -di
F
/dt
90
ns
Fig. 14 Peak reverse current I
RM
versus -di
F
/dt
20
T
VJ
= 100°C
I
F
= 30A
V
V
FR
15
1.00
2.0
T
VJ
= 100°C
V
R
= 300V
V
FR
µs
t
fr
0.75
1.5
K
f
1.0
t
rr
80
t
fr
I
RM
70
I
F
= 60A
I
F
= 30A
I
F
= 15A
10
0.50
0.5
Q
r
5
0.25
0.0
0
40
80
120 °C 160
T
VJ
60
0
200
400
600
-di
F
/dt
800
A/µs 1000
0
0
200
400
0.00
600 A/µs 1000
800
di
F
/dt
Fig. 15 Dynamic parameters Q
r
, I
RM
versus T
VJ
1
K/W
Fig. 16 Recovery time t
rr
versus -di
F
/dt
Fig. 17 Peak forward voltage V
FR
and
t
fr
versus di
F
/dt
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
0.502
0.193
0.205
t
i
(s)
0.0052
0.0003
0.0162
0.1
Z
thJC
1
2
3
0.01
0.001
0.00001
DSEP 29-06
0.0001
0.001
0.01
0.1
t
s
1
Fig. 18 Transient thermal resistance junction to case
© 2003 IXYS All rights reserved
51单片机
