Advance Technical Information
TrenchT2
TM
Power MOSFET
IXTV270N055T2
IXTV270N055T2S
V
DSS
I
D25
R
DS(on)
= 55V
= 270A
≤
3.0mΩ
Ω
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
PLUS220 (IXTV)
G
D
S
D (Tab)
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
LRMS
I
DM
I
A
E
AS
P
D
T
J
T
JM
T
stg
T
L
T
sold
F
C
Weight
Test Conditions
T
J
= 25°C to 175°C
T
J
= 25°C to 175°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C (Chip Capability)
Lead Current Limit, RMS
T
C
= 25°C, Pulse Width Limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
Maximum Ratings
55
55
±20
±30
270
120
600
80
600
625
- 55 ... +175
175
- 55 ... +175
V
V
V
V
A
A
A
A
mJ
W
°C
°C
°C
°C
°C
N/lb.
g
Features
175°C Operating Temperature
High Current Handling Capability
Avalanche Rated
Fast Intrinsic Rectifier
Low R
DS(on)
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
V
4.0
V
G = Gate
S = Source
D
= Drain
Tab = Drain
G
S
D (Tab)
PLUS220SMD (IXTV_S)
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 Seconds
Mounting Force (PLUS220)
PLUS220
300
260
11..65/2.5..14.6
4.0
Symbol
Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 250μA
V
DS
= V
GS
, I
D
= 250μA
V
GS
=
±
20V, V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 150°C
V
GS
= 10V, I
D
= 50A, Note 1
Characteristic Values
Min. Typ.
Max.
55
2.0
•
Synchronous Buck Converters
•
High Current Switching Power
•
•
•
•
Supplies
Battery Powered Electric Motors
Resonant-Mode Power Supplies
Electronics Ballast Application
Class D Audio Amplifiers
±200
nA
5
250
2.4
μA
μA
3.0 mΩ
© 2010 IXYS CORPORATION, All Rights Reserved
DS100263(05/10)
IXTV270N055T2
IXTV270N055T2S
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCH
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
I
RM
Q
RM
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= 100A, V
GS
= 0V, Note 1
I
F
= 0.5 • I
D25
, V
GS
= 0V
-di/dt = 100A/μs
V
R
= 27V
63
3.8
120
Characteristic Values
Min. Typ.
Max.
270
1080
1.3
A
A
V
ns
A
nC
TO-220 Outline
0.21
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 100A
R
G
= 2Ω
(External)
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 10V, I
D
= 60A, Note 1
Characteristic Values
Min. Typ.
Max.
48
80
9700
1470
250
19
20
40
37
167
35
43
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.24
°C/W
°C/W
TO-263 Outline
Note:
1.
Pulse test, t
≤
300μs, duty cycle, d
≤
2%.
Pins:
1 - Gate
3 - Source
2 - Drain
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTV270N055T2
IXTV270N055T2S
Fig. 1. Output Characteristics @ T
J
= 25ºC
350
300
250
V
GS
= 15V
10V
9V
8V
7V
400
350
300
V
GS
= 10V
8V
7V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
I
D
- Amperes
200
150
100
5V
50
4V
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
6V
I
D
- Amperes
250
200
150
100
50
0
0
1
2
3
4
5
6
7
5V
6V
4V
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics @ T
J
= 150ºC
280
240
200
V
GS
= 15V
10V
9V
8V
2.2
2.0
7V
1.8
Fig. 4. R
DS(on)
Normalized to I
D
= 135A Value vs.
Junction Temperature
V
GS
= 10V
R
DS(on)
- Normalized
I
D
= 270A
I
D
= 135A
I
D
- Amperes
1.6
1.4
1.2
1.0
0.8
160
6V
120
80
40
4V
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
5V
0.6
-50
-25
0
25
50
75
100
125
150
175
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= 135A Value vs.
Drain Current
2.4
2.2
2.0
T
J
= 175ºC
200
180
160
140
Fig. 6. Input Admittance
R
DS(on)
- Normalized
1.8
I
D
- Amperes
120
100
80
60
40
T
J
= 150ºC
25ºC
- 40ºC
1.6
1.4
1.2
1.0
0.8
0.6
0
V
GS
= 10V
15V
- - - - -
T
J
= 25ºC
20
0
50
100
150
200
250
300
350
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
I
D
- Amperes
V
GS
- Volts
© 2010 IXYS CORPORATION, All Rights Reserved
IXTV270N055T2
IXTV270N055T2S
Fig. 7. Transconductance
140
T
J
= - 40ºC
120
25ºC
100
250
300
Fig. 8. Forward Voltage Drop of Intrinsic Diode
g
f s
- Siemens
80
60
40
20
0
0
20
40
60
80
100
120
140
160
180
200
I
S
- Amperes
150ºC
200
150
100
T
J
= 150ºC
T
J
= 25ºC
50
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
I
D
- Amperes
V
SD
- Volts
Fig. 9. Gate Charge
10
9
8
7
V
DS
= 27.5V
I
D
= 135A
I
G
= 10mA
100,000
Fig. 10. Capacitance
f
= 1 MHz
Capacitance - PicoFarads
Ciss
10,000
V
GS
- Volts
6
5
4
3
2
1
0
0
20
40
60
80
100
120
140
160
180
Coss
1,000
Crss
100
0
5
10
15
20
25
30
35
40
Q
G
- NanoCoulombs
V
DS
- Volts
Fig. 11. Drain Current vs. Case Temperature
140
External Lead Current limit
120
1,000
Fig. 12. Forward-Bias Safe Operating Area
R
DS(on)
Limit
100
25µs
100
80
60
40
20
0
-50
-25
0
25
50
75
100
125
150
175
1
0.1
1
10
100
I
D
- Amperes
I
D
- Amperes
External Lead Limit
100µs
1ms
10
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
10ms
100ms
DC
T
C
- Degrees Centigrade
V
DS
- Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTV270N055T2
IXTV270N055T2S
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
32
R
G
= 2Ω , V
GS
= 10V
28
V
DS
= 27.5V
23
24
R
G
= 2Ω , V
GS
= 10V
V
DS
= 27.5V
T
J
= 125ºC
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
t
r
- Nanoseconds
t
r
- Nanoseconds
24
22
20
I
D
= 100A
21
16
I
D
= 200A
20
T
J
= 25ºC
12
19
8
25
35
45
55
65
75
85
95
105
115
125
18
40
60
80
100
120
140
160
180
200
T
J
- Degrees Centigrade
I
D
- Amperes
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
350
300
250
70
50
45
40
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
62
t
r
V
DS
= 27.5V
t
d(on)
- - - -
I
D
= 200A , 100A
T
J
= 125ºC, V
GS
= 10V
60
50
40
30
20
10
0
t
f
V
DS
= 27.5V
t
d(off)
- - - -
58
54
50
46
42
I
D
= 200A
38
34
30
125
R
G
= 2Ω, V
GS
= 10V
t
d(on)
- Nanoseconds
t
d(off)
- Nanoseconds
t
f
- Nanoseconds
t
r
- Nanoseconds
35
30
25
20
15
10
25
35
45
55
65
200
150
100
50
0
2
4
6
8
10
12
14
16
I
D
= 100A
75
85
95
105
115
R
G
- Ohms
T
J
- Degrees Centigrade
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
55
50
45
70
280
240
200
160
120
80
40
0
2
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
280
65
60
t
f
V
DS
= 27.5V
t
d(off)
- - - -
t
f
V
DS
= 27.5V
t
d(off)
- - - -
I
D
= 100A
R
G
= 2Ω, V
GS
= 10V
T
J
= 125ºC, V
GS
= 10V
240
200
160
I
D
t
d(off)
- Nanoseconds
t
d(off)
- Nanoseconds
t
f
- Nanoseconds
40
35
30
25
20
15
10
40
60
80
100
120
140
160
180
T
J
= 25ºC, 125ºC
55
50
45
40
35
30
25
200
t
f
- Nanoseconds
= 200A
120
80
40
0
4
6
8
10
12
14
16
I
D
- Amperes
R
G
- Ohms
© 2010 IXYS CORPORATION, All Rights Reserved
