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The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 29 April 2013.

INCH-POUND

MIL-PRF-19500/543N

29 March 2013

SUPERSEDING

MIL-PRF-19500/543M

22 September 2011

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON

REPETITIVE AVALANCHE, TYPES 2N6764, 2N6764T1, 2N6766, 2N6766T1, 2N6768, 2N6768T1,

2N6770, AND 2N6770T1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall consist of

this specification sheet and

MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for N-channel, enhancement-mode,

MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as

specified in

MIL-PRF-19500

and two levels of product assurance for each unencapsulated die, with avalanche energy

ratings (EAS and EAR) and maximum avalanche current (IAR).

1.2 Physical dimensions. See

figure 1

(TO-204AE for types 2N6764 and 2N6766; TO-204AA for types 2N6768

and 2N6770 (formerly TO-3)), see

figure 2

(TO-254AA for types 2N6764T1, 2N6766T1; 2N6768T1, and 2N6770T1),

and

figures 3, 4,

and

for JANHC and JANKC (die) dimensions.

1.3 Maximum ratings.

= +25°C, unless otherwise specified).

TA = +25°C

θJC

(2)

°C/W

0.83

VDS

V dc

100

200

400

500

VDG

V dc

100

200

400

500

VGS

V dc

±20

ID1 (3) (4)

TC = +25°C

A dc

38.0

30.0

14.0

12.0

A dc

38.0

30.0

14.0

12.0

ID2 (3) (4)

TC = +100°C

A dc

24.0

19.0

9.0

7.75

Type

PT (1)

TC = +25°C

150

2N6764, 2N6764T1

2N6766, 2N6766T1

2N6768, 2N6768T1

2N6770, 2N6770T1

See notes on next page.

* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,

ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to

Semiconductor@dla.mil.

Since contact

information can change, you may want to verify the currency of this address information using the ASSIST

Online database at

https://assist.dla.mil/.

AMSC N/A

FSC 5961

MIL-PRF-19500/543N

1.3 Maximum ratings - Continued.

Type

IDM

(5)

A pk

2N6764, 2N6764T1

2N6766, 2N6766T1

2N6768, 2N6768T1

2N6770, 2N6770T1

152

120

EAS

EAR

IAR

(5)

VISO

70,000 ft.

attitude

TSTG

and

°C

-55

+150

Max rDS(on); (6)

VGS = 10 V dc, ID = ID2

TJ = +25°C

Ω

0.055

0.085

0.300

0.400

TJ = +150°C

Ω

0.105

0.170

0.750

1.000

150

500

700

750

38.0

30.0

14.0

12.0

400

500

(1) Derate linearly 1.2 W/°C for T

> +25°C.

(2) See

figure 6,

thermal impedance curves.

(3) The following formula derives the maximum theoretical I

limit. I

is also limited by package and internal

wires:

(

- T

)

(

( on ) at T

)

(4) See

figure 7,

maximum drain current graphs.

(5) IDM = 4 x ID1 as calculated in note 2.

(6) Pulsed (see

4.5.1).

1.4 Primary electrical characteristics at T

= +25°C.

Type

Min V

(BR)DSS

= 0

= 1.0mA

V dc

2N6764, 2N6764T1

2N6766, 2N6766T1

2N6768, 2N6768T1

2N6770, 2N6770T1

(1) Pulsed (see

4.5.1).

100

200

400

500

GS(TH)1

≥

= 0.25 mA dc

V dc

Min

Max

2.0

4.0

Max I

DSS1

= 0

= 80 percent of rated V

µA

MIL-PRF-19500/543N

FIGURE 1. Physical dimensions of transistor types 2N6764 and 2N6766, TO-204AE;

for types 2N6768 and 2N6770, TO-204AA.

MIL-PRF-19500/543N

Dimensions

Ltr

Min

.250

.495

.131

.060

.057

.038

MHD

MHS

.151

1.177

.420

.205

.655

.312

Inches

Max

.875

.360

.525

.188

.135

.063

.043

.500

.050

.161

1.197

.440

.225

.675

3.84

29.90

10.67

5.21

16.64

6.35

12.57

3.33

1.52

1.45

0.97

7.92

Millimeter

Min

Max

22.23

9.15

13.3

4.78

3.43

1.60

1.10

12.70

1.27

4.09

30.40

11.18

5.72

17.15

Notes

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. These dimensions shall be measured at points .050 inch (1.27 mm) and .055 inch (1.40 mm)

below the seating plane. When gauge is not used, measurement will be made at the seating

plane.

4. The seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch

(0.10 mm) convex inside a .930 inch (23.62 mm) diameter circle on the center of the header

and flat within .001 inch (0.03 mm) concave to .006 inch (0.15 mm) convex overall.

5. These dimensions pertain to the 2N6764 and 2N6766 types.

6. These dimensions pertain to the 2N6768 and 2N6770 types.

7. Mounting holes shall be deburred on the seating plane side.

8. Drain is electrically connected to the case.

9. In accordance with ASME Y14.5M, diameters are equivalent to

φx

symbology.

FIGURE 1. Physical dimensions of transistor types 2N6764 and 2N6766 TO-204AE;

for types 2N6768 and 2N6770, TO-204AA - Continued.

MIL-PRF-19500/543N

Dimensions

Ltr

Inches

Min

.535

.249

.035

.510

Max

.545

.260

.045

.570

Millimeters

Min

13.59

6.32

0.89

12.95

Max

13.84

6.60

1.14

14.48

3, 4

Notes

TO-254

MHD

MHO

Term 1

Term 2

Term 3

.150 BSC

.139

.665

.790

.040

.535

.149

.685

.800

.050

.545

3.81 BSC

3.53

16.89

20.07

1.02

13.59

Drain

Source

Gate

3.78

17.40

20.32

1.27

13.84

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. Protrusion thickness of ceramic eyelets included in dimension LL.

4. All terminals are isolated from case.

5. In accordance with ASME Y14.5M, diameters are equivalent to

φx

symbology.

FIGURE 2. Physical dimensions for 2N6764T1, 2N6766T1, 2N6768T1, and 2N6770T1 (TO-254AA).

参数对比

与JANHCA2N6766相近的元器件有：JANTXV2N6768、JANTX2N6768、JANHCA2N6768、JANHCA2N6764、JANTXV2N6764、JANHCA2N6770、JANTX2N6764、JANTXV2N6766。描述及对比如下：

型号	JANHCA2N6766	JANTXV2N6768	JANTX2N6768	JANHCA2N6768	JANHCA2N6764	JANTXV2N6764	JANHCA2N6770	JANTX2N6764	JANTXV2N6766
描述	Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3	Power Field-Effect Transistor, 14A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN	Power Field-Effect Transistor, 14A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN	Power Field-Effect Transistor, 14A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3	Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3	Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN	Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3	Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN	Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合
包装说明	DIE-3	TO-204, 2 PIN	TO-204, 2 PIN	DIE-3	DIE-3	TO-204, 2 PIN	DIE-3	TO-204, 2 PIN	HERMETIC SEALED, TO-204, 2 PIN
Reach Compliance Code	unknown	compli	compli	compli	compliant	unknown	unknown	unknown	unknown
雪崩能效等级（Eas）	500 mJ	11.3 mJ	11.3 mJ	700 mJ	150 mJ	150 mJ	750 mJ	150 mJ	60 mJ
外壳连接	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN
配置	SINGLE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE	SINGLE	SINGLE WITH BUILT-IN DIODE	SINGLE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	200 V	400 V	400 V	400 V	100 V	100 V	500 V	100 V	200 V
最大漏极电流 (Abs) (ID)	30 A	14 A	14 A	14 A	38 A	38 A	12 A	38 A	30 A
最大漏极电流 (ID)	30 A	14 A	14 A	14 A	38 A	38 A	12 A	38 A	30 A
最大漏源导通电阻	0.085 Ω	0.4 Ω	0.4 Ω	0.3 Ω	0.055 Ω	0.065 Ω	0.4 Ω	0.065 Ω	0.09 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	S-XUUC-N3	O-MBFM-P2	O-MBFM-P2	S-XUUC-N3	S-XUUC-N3	O-MBFM-P2	S-XUUC-N3	O-MBFM-P2	O-MBFM-P2
JESD-609代码	e0	e0	e0	e0	e0	e0	e0	e0	e0
元件数量	1	1	1	1	1	1	1	1	1
端子数量	3	2	2	3	3	2	3	2	2
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	UNSPECIFIED	METAL	METAL	UNSPECIFIED	UNSPECIFIED	METAL	UNSPECIFIED	METAL	METAL
封装形状	SQUARE	ROUND	ROUND	SQUARE	SQUARE	ROUND	SQUARE	ROUND	ROUND
封装形式	UNCASED CHIP	FLANGE MOUNT	FLANGE MOUNT	UNCASED CHIP	UNCASED CHIP	FLANGE MOUNT	UNCASED CHIP	FLANGE MOUNT	FLANGE MOUNT
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大功率耗散 (Abs)	150 W	150 W	150 W	150 W	150 W	150 W	150 W	150 W	150 W
最大脉冲漏极电流 (IDM)	120 A	56 A	56 A	56 A	152 A	152 A	48 A	152 A	120 A
认证状态	Qualified	Qualified	Qualified	Qualified	Qualified	Qualified	Qualified	Qualified	Qualified
参考标准	MIL-19500/543G	MIL-19500/543	MIL-19500/543	MIL-19500/543G	MIL-19500/543G	MIL-19500/543	MIL-19500/543G	MIL-19500/543	MIL-19500/543
表面贴装	YES	NO	NO	YES	YES	NO	YES	NO	NO
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	NO LEAD	PIN/PEG	PIN/PEG	NO LEAD	NO LEAD	PIN/PEG	NO LEAD	PIN/PEG	PIN/PEG
端子位置	UPPER	BOTTOM	BOTTOM	UPPER	UPPER	BOTTOM	UPPER	BOTTOM	BOTTOM
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
厂商名称	Infineon(英飞凌)	-	-	-	Infineon(英飞凌)	Infineon(英飞凌)	Infineon(英飞凌)	Infineon(英飞凌)	Infineon(英飞凌)
ECCN代码	EAR99	EAR99	EAR99	-	EAR99	EAR99	-	EAR99	EAR99
其他特性	-	HIGH RELIABILITY	HIGH RELIABILITY	-	-	HIGH RELIABILITY	-	HIGH RELIABILITY	HIGH RELIABILITY
JEDEC-95代码	-	TO-204	TO-204	-	-	TO-204	-	TO-204	TO-204