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Jantxv2N6676

Power Bipolar Transistor, 15A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, TO-204AA, 2 PIN

器件类别：分立半导体    晶体管   

厂商名称：Microsemi

厂商官网：https://www.microsemi.com

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
Objectid
1689297330
零件包装代码
TO-3
包装说明
TO-204AA, 2 PIN
针数
2
Reach Compliance Code
unknown
ECCN代码
EAR99
Samacsys Manufacturer
Microsemi Corporation
Samacsys Modified On
2023-02-09 22:29:47
外壳连接
COLLECTOR
最大集电极电流 (IC)
15 A
集电极-发射极最大电压
300 V
配置
SINGLE
最小直流电流增益 (hFE)
8
JEDEC-95代码
TO-204AA
JESD-30 代码
O-MBFM-P2
JESD-609代码
e0
元件数量
1
端子数量
2
最高工作温度
200 °C
封装主体材料
METAL
封装形状
ROUND
封装形式
FLANGE MOUNT
极性/信道类型
NPN
最大功率耗散 (Abs)
175 W
认证状态
Not Qualified
参考标准
MIL
表面贴装
NO
端子面层
TIN LEAD
端子形式
PIN/PEG
端子位置
BOTTOM
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
15 MHz
文档预览
TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/538
Devices
2N6676
2N6678
2N6691
2N6693
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Symbol
V
CEO
V
CBO
V
CEX
V
EBO
I
B
I
C
2N6676 2N6678
2N6691 2N6693
300
400
450
650
450
650
8.0
5.0
15
2N6676 2N6691
2N6678 2N6693
6.0
(2)
3.0
(3)
175
175
-65 to +200
Max.
1.0
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
2N6676, 2N6678
TO-3 (TO-204AA)*
@ T
A
= 25
0
C
@ T
C
= 25
0
C
(1)
Operating & Storage Junction Temperature Range
Total Power Dissipation
P
T
T
op;
T
stg
Symbol
R
θ
JC
W
W
0
C
Unit
C/W
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 1.0 W/
0
C for T
C
> 25
0
C
2) Derate linearly 34.2 mW/
0
C for T
A
> 25
0
C
3)
Derate linearly 17.1 mW/
0
C for T
A
> 25
0
C
0
2N6691, 2N6693
TO-61*
* See Appendix A for Package
Outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 200 mAdc
Collector-Emitter Cutoff Current
V
CE
= 450 Vdc, V
BE
= 1.5 Vdc
V
CE
= 650 Vdc, V
BE
= 1.5 Vdc
2N6676, 2N6691
2N6678, 2N6693
2N6676, 2N6691
2N6678, 2N6693
V
(BR)
CEO
300
400
0.1
0.1
Vdc
I
CEX
mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N6676, 2N6678, 2N6691, 2N6693 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Emitter-Base Cutoff Current
V
EB
= 8.0 Vdc
Collector-Base Cutoff Current
V
CB
= 450 Vdc
V
CB
= 650 Vdc
Symbol
I
EBO
2N6676, 2N6691
2N6678, 2N6693
I
CBO
Min.
Max.
2.0
1.0
1.0
Unit
mAdc
mAdc
ON CHARACTERISTICS
(4)
Forward-Current Transfer Ratio
I
C
= 1.0 Adc; V
CE
= 3.0 Vdc
I
C
= 15 Adc; V
CE
= 3.0 Vdc
Collector-Emitter Saturation Voltage
I
C
= 15 Adc; I
B
= 3.0 Adc
Base-Emitter Saturation Voltage
I
C
= 15 Adc; I
B
= 3.0 Adc
h
FE
V
CE(sat)
V
BE(sat)
15
8.0
40
20
1.0
1.5
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Small-Signal Short-Circuit Forward Current Transfer Ratio
I
C
= 1.0 Adc; V
CE
= 10 Vdc, f = 5 MHz
Output Capacitance
V
CB
= 10 Vdc; I
E
= 0, 100 kHz
≤
f
≤
1.0 MHz
h
fe
C
obo
t
3.0
150
10
500
0.1
0.6
2.5
0.5
0.5
pF
µs
µs
µs
µs
µs
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Cross-Over Time
d
r
t
s
t
f
t
c
t
See Figure 3 of MIL-PRF-19500/538
SAFE OPERATING AREA
DC Tests
T
C
= +25
0
C, 1 Cycle, t = 1.0 s
Test 1
V
CE
= 11.7 Vdc, I
C
= 15 Adc
All Types
Test 2
V
CE
= 30 Vdc, I
C
= 5.9 Adc
2N6676, 2N6678
Test 3
V
CE
= 100 Vdc, I
C
= 0.25 Adc
All Types
Test 4
V
CE
= 25 Vdc, I
C
= 7.0 Adc
2N6691, 2N6693
Test 5
V
CE
= 300 Vdc, I
C
= 20 mAdc
2N6676, 2N6691
V
CE
= 400 Vdc, I
C
= 10 mAdc
2N6678, 2N6693
Clamped Switching
T
A
= 25
0
C;
V
CC
= 15 Vdc
I
C
= 15 Adc; Clamped Voltage = 350 Vdc
2N6676, 2N6691
I
C
= 15 Adc; Clamped Voltage = 450 Vdc
2N6678, 2N6693
(4) Pulse Test: Pulse Width = 300µs, Duty Cycle
≤
2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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参数对比
与Jantxv2N6676相近的元器件有：Jantxv2N6693、Jantxv2N6678、Jan2N6693、FP52SP-2083-CT50Q、Jantx2N6678、GUS-TS0A-02-1840-DD。描述及对比如下：
型号 Jantxv2N6676 Jantxv2N6693 Jantxv2N6678 Jan2N6693 FP52SP-2083-CT50Q Jantx2N6678 GUS-TS0A-02-1840-DD
描述 Power Bipolar Transistor, 15A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, TO-204AA, 2 PIN Bipolar Transistors - BJT Power BJT Power Bipolar Transistor, 15A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, TO-204AA, 2 PIN Bipolar Transistors - BJT Power BJT Fixed Resistor, Metal Film, 0.4W, 208000ohm, 200V, 0.25% +/-Tol, 50ppm/Cel, Power Bipolar Transistor, 15A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, TO-204AA, 2 PIN Array/Network Resistor, Isolated, Tantalum Nitride/nickel Chrome, 0.1W, 184ohm, 100V, 0.5% +/-Tol, -50,50ppm/Cel, 2617,
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合 不符合
Reach Compliance Code unknown compliant unknown compliant compliant unknown compliant
JESD-609代码 e0 e0 e0 e0 e0 e0 e0
端子数量 2 3 2 3 2 2 20
最高工作温度 200 °C 200 °C 200 °C 200 °C 160 °C 200 °C 125 °C
封装形式 FLANGE MOUNT POST/STUD MOUNT FLANGE MOUNT POST/STUD MOUNT Axial FLANGE MOUNT SMT
端子面层 TIN LEAD Tin/Lead (Sn/Pb) TIN LEAD Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) TIN LEAD Tin/Lead (Sn/Pb)
是否无铅 含铅 含铅 含铅 含铅 - 含铅 -
Objectid 1689297330 - 1689297336 - 240993002 1689294090 801248180
零件包装代码 TO-3 TO-63 TO-3 TO-63 - TO-3 -
包装说明 TO-204AA, 2 PIN POST/STUD MOUNT, O-MUPM-X3 TO-204AA, 2 PIN POST/STUD MOUNT, O-MUPM-X3 - TO-204AA, 2 PIN -
针数 2 3 2 3 - 2 -
ECCN代码 EAR99 - EAR99 - EAR99 EAR99 EAR99
外壳连接 COLLECTOR COLLECTOR COLLECTOR COLLECTOR - COLLECTOR -
最大集电极电流 (IC) 15 A 15 A 15 A 15 A - 15 A -
集电极-发射极最大电压 300 V 400 V 400 V 400 V - 400 V -
配置 SINGLE SINGLE SINGLE SINGLE - SINGLE -
最小直流电流增益 (hFE) 8 8 8 8 - 8 -
JEDEC-95代码 TO-204AA TO-61 TO-204AA TO-61 - TO-204AA -
JESD-30 代码 O-MBFM-P2 O-MUPM-X3 O-MBFM-P2 O-MUPM-X3 - O-MBFM-P2 -
元件数量 1 1 1 1 - 1 -
封装主体材料 METAL METAL METAL METAL - METAL -
封装形状 ROUND ROUND ROUND ROUND CYLINDRICAL PACKAGE ROUND -
极性/信道类型 NPN NPN NPN NPN - NPN -
最大功率耗散 (Abs) 175 W 175 W 175 W 175 W - 175 W -
认证状态 Not Qualified Qualified Qualified Qualified - Not Qualified -
参考标准 MIL MIL MIL MIL - MIL -
表面贴装 NO NO NO NO - NO -
端子形式 PIN/PEG UNSPECIFIED PIN/PEG UNSPECIFIED - PIN/PEG -
端子位置 BOTTOM UPPER BOTTOM UPPER - BOTTOM -
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING - SWITCHING -
晶体管元件材料 SILICON SILICON SILICON SILICON - SILICON -
标称过渡频率 (fT) 15 MHz 15 MHz 15 MHz 15 MHz - 15 MHz -
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