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KRC241M

EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

器件类别:分立半导体    晶体管   

厂商名称:KEC

厂商官网:http://www.keccorp.com/

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器件参数
参数名称
属性值
厂商名称
KEC
零件包装代码
TO-92M
包装说明
CYLINDRICAL, R-PBCY-T3
针数
3
Reach Compliance Code
unknow
ECCN代码
EAR99
其他特性
BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC)
0.8 A
集电极-发射极最大电压
50 V
配置
SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)
33
JESD-30 代码
R-PBCY-T3
元件数量
1
端子数量
3
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
CYLINDRICAL
极性/信道类型
NPN
认证状态
Not Qualified
表面贴装
NO
端子形式
THROUGH-HOLE
端子位置
BOTTOM
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
200 MHz
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参数对比
与KRC241M相近的元器件有:KRC246M、KRC245M、KRC242M、KRC244M、KRC243M。描述及对比如下:
型号 KRC241M KRC246M KRC245M KRC242M KRC244M KRC243M
描述 EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT) EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT) EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT) EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT) EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT) EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
厂商名称 KEC KEC KEC KEC KEC KEC
零件包装代码 TO-92M TO-92M TO-92M TO-92M TO-92M TO-92M
包装说明 CYLINDRICAL, R-PBCY-T3 CYLINDRICAL, R-PBCY-T3 CYLINDRICAL, R-PBCY-T3 CYLINDRICAL, R-PBCY-T3 CYLINDRICAL, R-PBCY-T3 CYLINDRICAL, R-PBCY-T3
针数 3 3 3 3 3 3
Reach Compliance Code unknow unknown unknown unknow unknown unknow
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 4.55 BUILT-IN BIAS RESISTOR RATIO IS 10 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC) 0.8 A 0.8 A 0.8 A 0.8 A 0.8 A 0.8 A
集电极-发射极最大电压 50 V 50 V 50 V 50 V 50 V 50 V
配置 SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE) 33 56 56 39 56 47
JESD-30 代码 R-PBCY-T3 R-PBCY-T3 R-PBCY-T3 R-PBCY-T3 R-PBCY-T3 R-PBCY-T3
元件数量 1 1 1 1 1 1
端子数量 3 3 3 3 3 3
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
极性/信道类型 NPN NPN NPN NPN NPN NPN
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO NO NO NO
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 200 MHz 200 MHz 200 MHz 200 MHz 200 MHz 200 MHz
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器件捷径:
E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ
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