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KSC1393YTA

VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, LEAD FREE PACKAGE-3

器件类别:分立半导体    晶体管   

厂商名称:Rochester Electronics

厂商官网:https://www.rocelec.com/

器件标准:  

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Rochester Electronics
零件包装代码
TO-92
包装说明
LEAD FREE PACKAGE-3
针数
3
Reach Compliance Code
unknown
其他特性
LOW NOISE
最大集电极电流 (IC)
0.02 A
基于收集器的最大容量
0.5 pF
集电极-发射极最大电压
30 V
配置
SINGLE
最高频带
VERY HIGH FREQUENCY BAND
JEDEC-95代码
TO-92
JESD-30 代码
O-PBCY-T3
JESD-609代码
e3
湿度敏感等级
NOT APPLICABLE
元件数量
1
端子数量
3
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
CYLINDRICAL
峰值回流温度(摄氏度)
NOT APPLICABLE
极性/信道类型
NPN
认证状态
COMMERCIAL
表面贴装
NO
端子面层
MATTE TIN
端子形式
THROUGH-HOLE
端子位置
BOTTOM
处于峰值回流温度下的最长时间
NOT APPLICABLE
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
标称过渡频率 (fT)
700 MHz
文档预览
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KSC1393
KSC1393
TV VHF Tuner RF Amplifier (Forward AGC)
• High Current Gain Bandwidth Product : f
T
=700MHz (TYP.)
• Low Noise Figure : NF=3.0dB (MAX.) at f=200MHz
• Low Reverse Transfer Capacitance : C
RE
=0.5pF (MAX.)
1
TO-92
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
30
30
4
20
250
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
f
T
C
RE
G
PE
I
AGC
NF
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Current Gain Bandwidth Product
Reverse Transfer Capacitance
Power Gain
AGC Current
Noise Figure
Test Condition
I
C
=10µA, I
E
=0
I
C
=5mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=20V, I
E
=0
V
CE
=10V, I
C
=2mA
V
CE
=10V, I
C
=3mA
V
CB
=10V, I
E
=0, f=1MHz
V
CE
=10V, I
C
=3mA
f=200MHz
I
E
at G
R
= -30dB, f=200MHz
V
CE
=10V, I
C
= 3mA
f=200MHz
20
40
400
700
0.35
24
-10
2.0
-12
3.0
0.5
Min.
30
30
4
0.1
180
MHz
pF
dB
mA
dB
Typ.
Max.
Units
V
V
V
µA
h
FE
Classification
Classification
h
FE
R
40 ~ 80
O
60 ~ 140
Y
90 ~ 180
©2002 Fairchild Semiconductor Corporation
Rev. B1, September 2002
KSC1393
Typical Characteristics
10
9
I
B
= 200
µ
A = 180
µ
A
I
B
I
B
= 160
µ
A
I
B
= 140
µ
A
I
B
= 120
µ
A
I
B
= 100
µ
A
I
B
= 80
µ
A
I
B
= 60
µ
A
I
B
= 40
µ
A
V
CE
= 2V
100
I
C
[mA], COLLECTOR CURRENT
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
I
B
= 20
µ
A
6
7
8
9
10
10
0.1
1
10
h
FE
, DC CURRENT GAIN
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
10
10
I
C
=10I
B
f=1MHz
I
E
=0
1
V
BE
(sat)
C
re
[pF], CAPACITANCE
10
1
V
CE
(sat)
0.1
0.01
0.1
1
0.1
1
100
I
C
[mA], COLLECTOR CURRENT
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Reverse Capacitance
10000
f
T
[MHz],
CURRENT GAIN-BANDWIDTH PRODUCT
V
CE
= 10V
1000
100
10
0.1
1
10
100
I
C
[mA], COLLECTOR CURRENT
Figure 5. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
Rev. B1, September 2002
KSC1393
Package Dimensions
TO-92
4.58
–0.15
+0.25
0.46
14.47
±0.40
±0.10
4.58
±0.20
1.27TYP
[1.27
±0.20
]
3.60
±0.20
1.27TYP
[1.27
±0.20
]
0.38
–0.05
+0.10
3.86MAX
1.02
±0.10
0.38
–0.05
+0.10
(R2.29)
(0.25)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. B1, September 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
FACT™
ActiveArray™
FACT Quiet series™
Bottomless™
FAST
®
FASTr™
CoolFET™
CROSSVOLT™
FRFET™
GlobalOptoisolator™
DOME™
EcoSPARK™
GTO™
2
CMOS™
E
HiSeC™
EnSigna™
I
2
C™
Across the board. Around the world.™
The Power Franchise™
Programmable Active Droop™
DISCLAIMER
ImpliedDisconnect™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
SILENT SWITCHER
®
SMART START™
SPM™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
®
VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. I1
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参数对比
与KSC1393YTA相近的元器件有:KSC1393OBU、KSC1393OTA、KSC1393YBU。描述及对比如下:
型号 KSC1393YTA KSC1393OBU KSC1393OTA KSC1393YBU
描述 VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, LEAD FREE PACKAGE-3 VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, LEAD FREE PACKAGE-3 VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, LEAD FREE PACKAGE-3 VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, LEAD FREE PACKAGE-3
是否无铅 不含铅 不含铅 不含铅 不含铅
是否Rohs认证 符合 符合 符合 符合
厂商名称 Rochester Electronics Rochester Electronics Rochester Electronics Rochester Electronics
零件包装代码 TO-92 TO-92 TO-92 TO-92
包装说明 LEAD FREE PACKAGE-3 LEAD FREE PACKAGE-3 LEAD FREE PACKAGE-3 LEAD FREE PACKAGE-3
针数 3 3 3 3
Reach Compliance Code unknown unknown unknown unknown
其他特性 LOW NOISE LOW NOISE LOW NOISE LOW NOISE
最大集电极电流 (IC) 0.02 A 0.02 A 0.02 A 0.02 A
基于收集器的最大容量 0.5 pF 0.5 pF 0.5 pF 0.5 pF
集电极-发射极最大电压 30 V 30 V 30 V 30 V
配置 SINGLE SINGLE SINGLE SINGLE
最高频带 VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND
JEDEC-95代码 TO-92 TO-92 TO-92 TO-92
JESD-30 代码 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
JESD-609代码 e3 e3 e3 e3
湿度敏感等级 NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE
元件数量 1 1 1 1
端子数量 3 3 3 3
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 ROUND ROUND ROUND ROUND
封装形式 CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
峰值回流温度(摄氏度) NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE
极性/信道类型 NPN NPN NPN NPN
认证状态 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
表面贴装 NO NO NO NO
端子面层 MATTE TIN MATTE TIN MATTE TIN MATTE TIN
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM
处于峰值回流温度下的最长时间 NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE
晶体管应用 AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
晶体管元件材料 SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 700 MHz 700 MHz 700 MHz 700 MHz
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S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY
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