型号
- 型号
- 关键词
Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, IPAK-3
厂商名称：SAMSUNG(三星)
厂商官网：http://www.samsung.com/Products/Semiconductor/
下载文档| 型号 | KSC3076-Y-I | KSC3076-O-I | KSC3076-I |
|---|---|---|---|
| 描述 | Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, IPAK-3 | Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, IPAK-3 | Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, IPAK-3 |
| 厂商名称 | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) |
| 包装说明 | IN-LINE, R-PSIP-T3 | IN-LINE, R-PSIP-T3 | IN-LINE, R-PSIP-T3 |
| 针数 | 3 | 3 | 3 |
| Reach Compliance Code | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 |
| 最大集电极电流 (IC) | 2 A | 2 A | 2 A |
| 集电极-发射极最大电压 | 50 V | 50 V | 50 V |
| 配置 | SINGLE | SINGLE | SINGLE |
| 最小直流电流增益 (hFE) | 120 | 70 | 40 |
| JESD-30 代码 | R-PSIP-T3 | R-PSIP-T3 | R-PSIP-T3 |
| 元件数量 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE |
| 极性/信道类型 | NPN | NPN | NPN |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | SINGLE | SINGLE | SINGLE |
| 晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | SILICON | SILICON | SILICON |
| 标称过渡频率 (fT) | 100 MHz | 100 MHz | 100 MHz |
