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KSH41CTM

transistor npn 100v 6A dpak

器件类别:分立半导体    晶体管   

厂商名称:Fairchild

厂商官网:http://www.fairchildsemi.com/

器件标准:

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器件:KSH41CTM

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器件参数
参数名称
属性值
是否Rohs认证
符合
零件包装代码
TO-252
包装说明
LEAD FREE, DPAK-3
针数
3
Reach Compliance Code
_compli
ECCN代码
EAR99
Is Samacsys
N
最大集电极电流 (IC)
6 A
集电极-发射极最大电压
100 V
配置
SINGLE
最小直流电流增益 (hFE)
15
JEDEC-95代码
TO-252
JESD-30 代码
R-PSSO-G2
JESD-609代码
e3
湿度敏感等级
1
元件数量
1
端子数量
2
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
极性/信道类型
NPN
最大功率耗散 (Abs)
20 W
认证状态
Not Qualified
表面贴装
YES
端子面层
Matte Tin (Sn)
端子形式
GULL WING
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
标称过渡频率 (fT)
3 MHz
Base Number Matches
1
文档预览
KSH41C
KSH41C
General Purpose Amplifier Low Speed
Switching Applications
D-PAK for Surface Mount Applications
• Lead Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular TIP41 and TIP41C
1
D-PAK
1.Base
1
I-PAK
3.Emitter
2.Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Collector Dissipation (T
a
=25°C)
Junction Temperature
Storage Temperature
Parameter
Value
100
100
5
6
10
2
20
1.75
150
- 65 ~ 150
Units
V
V
V
A
A
A
W
W
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
I
CEO
I
CES
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
Parameter
* Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter On Voltage
Current Gain Bandwidth Product
Test Condition
I
C
= 30mA, I
B
= 0
V
CE
= 60V, I
B
= 0
V
CE
= 100V, V
BE
= 0
V
BE
= 5V, I
C
= 0
V
CE
= 4V, I
C
= 0.3A
V
CE
= 4V, I
C
= 3A
I
C
= 6A, I
B
= 600mA
V
CE
= 6A, I
C
= 4A
V
CE
= 10V, I
C
= 500mA
3
30
15
Min.
100
Max.
50
10
0.5
75
1.5
2
V
V
MHz
Units
V
µA
uA
mA
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
KSH41C
Typical Characteristics
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
1000
10
V
CE
= 2V
I
C
= 10 I
B
h
FE
, DC CURRENT GAIN
100
1
V
BE
(sat)
10
0.1
V
CE
(sat)
1
0.01
0.1
1
10
0.01
0.01
0.1
1
10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
1000
V
CC
= 30V
I
C
= 10.I
B
C
ob
[pF], CAPACITANCE
t
R
, t
D
[
µ
s], TURN ON TIME
1
100
t
R
0.1
10
t
D
. V
BE
(off)=5V
1
0.1
0.01
0.01
0.1
1
10
1
10
100
V
CB
[V], COLLECTOR-BASE VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 3. Collector Capacitance
Figure 4. Turn On Time
10
100
t
F
, t
STG
[
µ
s], TURN OFF TIME
I
C
[A], COLLECTOR CURRENT
10
I
CP
(max)
10
50
0
µ
0
µ
s
1
t
STG
I
C
(max)
1
5m
s
DC
1m
s
s
0.1
t
F
0.1
0.01
0.01
0.1
1
10
0.01
1
10
100
1000
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Turn Off Time
Figure 6. Safe Operating Area
©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
KSH41C
Typical Characteristics
(Continued)
25
P
C
[W], POWER DISSIPATION
20
15
10
5
0
0
25
50
o
75
100
125
150
175
T
C
[ C], CASE TEMPERATURE
Figure 7. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
KSH41C
Package Dimensions
D-PAK
6.60
±0.20
5.34
±0.30
(0.50)
(4.34)
(0.50)
0.70
±0.20
2.30
±0.10
0.50
±0.10
0.60
±0.20
6.10
±0.20
2.70
±0.20
9.50
±0.30
0.91
±0.10
0.80
±0.20
MAX0.96
2.30TYP
[2.30±0.20]
0.76
±0.10
2.30TYP
[2.30±0.20]
0.89
±0.10
0.50
±0.10
1.02
±0.20
2.30
±0.20
(0.70)
(0.90)
(0.10)
(3.05)
6.10
±0.20
9.50
±0.30
2.70
±0.20
(2XR0.25)
0.76
±0.10
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
(1.00)
6.60
±0.20
(5.34)
(5.04)
(1.50)
MIN0.55
KSH41C
Package Dimensions
(Continued)
I-PAK
6.60
±0.20
5.34
±0.20
(0.50)
(4.34)
(0.50)
0.50
±0.10
2.30
±0.20
0.60
±0.20
0.70
±0.20
0.80
±0.10
6.10
±0.20
1.80
±0.20
MAX0.96
0.76
±0.10
9.30
±0.30
2.30TYP
[2.30±0.20]
2.30TYP
[2.30±0.20]
0.50
±0.10
©2002 Fairchild Semiconductor Corporation
16.10
±0.30
Dimensions in Millimeters
Rev. A4, October 2002
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参数对比
与KSH41CTM相近的元器件有:KSH41CITU。描述及对比如下:
型号 KSH41CTM KSH41CITU
描述 transistor npn 100v 6A dpak transistor npn 100v 6A I-pak
是否Rohs认证 符合 符合
零件包装代码 TO-252 TO-251
包装说明 LEAD FREE, DPAK-3 IPAK-3
针数 3 3
Reach Compliance Code _compli _compli
ECCN代码 EAR99 EAR99
Is Samacsys N N
最大集电极电流 (IC) 6 A 6 A
集电极-发射极最大电压 100 V 100 V
配置 SINGLE SINGLE
最小直流电流增益 (hFE) 15 15
JEDEC-95代码 TO-252 TO-251
JESD-30 代码 R-PSSO-G2 R-PSIP-T3
JESD-609代码 e3 e3
元件数量 1 1
端子数量 2 3
最高工作温度 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE IN-LINE
峰值回流温度(摄氏度) 260 NOT SPECIFIED
极性/信道类型 NPN NPN
最大功率耗散 (Abs) 20 W 20 W
认证状态 Not Qualified Not Qualified
表面贴装 YES NO
端子面层 Matte Tin (Sn) Matte Tin (Sn)
端子形式 GULL WING THROUGH-HOLE
端子位置 SINGLE SINGLE
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED
晶体管应用 AMPLIFIER AMPLIFIER
晶体管元件材料 SILICON SILICON
标称过渡频率 (fT) 3 MHz 3 MHz
Base Number Matches 1 1
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器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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