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LF347N

Operational Amplifiers - Op Amps Quad Wideband JFET

器件类别:模拟混合信号IC    放大器电路   

厂商名称:ST(意法半导体)

厂商官网:http://www.st.com/

器件标准:

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器件参数
参数名称
属性值
Brand Name
STMicroelectronics
是否Rohs认证
符合
厂商名称
ST(意法半导体)
零件包装代码
DIP
包装说明
DIP, DIP14,.3
针数
14
Reach Compliance Code
unknown
ECCN代码
EAR99
Factory Lead Time
16 weeks
放大器类型
OPERATIONAL AMPLIFIER
架构
VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB)
0.02 µA
25C 时的最大偏置电流 (IIB)
0.0002 µA
标称共模抑制比
86 dB
频率补偿
YES
最大输入失调电流 (IIO)
0.004 µA
最大输入失调电压
13000 µV
JESD-30 代码
R-PDIP-T14
JESD-609代码
e4
低-偏置
YES
低-失调
NO
负供电电压上限
-18 V
标称负供电电压 (Vsup)
-15 V
功能数量
4
端子数量
14
最高工作温度
70 °C
最低工作温度
封装主体材料
PLASTIC/EPOXY
封装代码
DIP
封装等效代码
DIP14,.3
封装形状
RECTANGULAR
封装形式
IN-LINE
峰值回流温度(摄氏度)
NOT SPECIFIED
电源
+-15 V
认证状态
Not Qualified
座面最大高度
5.1 mm
最小摆率
12 V/us
标称压摆率
16 V/us
最大压摆率
10.8 mA
供电电压上限
18 V
标称供电电压 (Vsup)
15 V
表面贴装
NO
技术
BIPOLAR
温度等级
COMMERCIAL
端子面层
Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式
THROUGH-HOLE
端子节距
2.54 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
标称均一增益带宽
4000 kHz
最小电压增益
25000
宽度
7.62 mm
文档预览
LF147 - LF247
LF347
WIDE BANDWIDTH
QUAD J-FET OPERATIONAL AMPLIFIERS
s
LOW POWER CONSUMPTION
s
WIDE COMMON-MODE (UP TO V
CC+
) AND
DIFFERENTIAL VOLTAGE RANGE
s
LOW INPUT BIAS AND OFFSET CURRENT
s
OUTPUT SHORT-CIRCUIT PROTECTION
s
HIGH INPUT IMPEDANCE J–FET INPUT
STAGE
N
DIP14
(Plastic Package)
s
INTERNAL FREQUENCY COMPENSATION
s
LATCH UP FREE OPERATION
s
HIGH SLEW RATE : 16V/µs (typ)
D
SO14
(Plastic Micropackage)
DESCRIPTION
These circuits are high speed J–FET input quad
operational amplifiers incorporating well matched,
high voltage J–FET and bipolar transistors in a
monolithic integrated circuit.
The devices feature high slew rates, low input bias
and offset currents, and low offset voltage tem-
perature coefficient.
PIN CONNECTIONS
(top view)
ORDER CODE
Package
Part Number
Temperature Range
N
LF147
LF247
LF347
Example :
LF347IN
-55°C, +125°C
-40°C, +105°C
0°C, +70°C
D
N =
Dual in Line Package (DIP)
D =
Small Outline Package (SO) - also available in Tape & Reel (DT)
Output 1 1
Inverting Input 1 2
Non-inverting Input 1 3
V
CC
+ 4
Non-inverting Input 2 5
Inverting Input 2 6
Output 2 7
+
-
+
-
-
+
-
+
14 Output 4
13 Inverting Input 4
12 Non-inverting Input 4
11 V
CC
-
10 Non-inverting Input 3
9
8
Inverting Input 3
Output 3
March 2001
1/10
LF147 - LF247 - LF347
SCHEMATIC DIAGRAM
(each amplifier)
V
CC
Non-inverting input
Inverting input
100
W
100
W
200
W
Output
30k
8.2k
1.3k
V
CC
35k
1.3k
35k
100
W
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CC
V
i
V
id
P
tot
T
oper
T
stg
1.
2.
3.
4.
Parameter
Supply voltage - note
1)
Input Voltage - note
2)
Differential Input Voltage - note
3)
Power Dissipation
Output Short-circuit Duration - note
4)
Operating Free-air Temperature Range
Storage Temperature Range
LF147
LF247
LF347
Unit
V
V
V
mW
±18
±15
±30
680
Infinite
-55 to +125
-40 to +105
-65 to +150
0 to +70
°C
°C
All voltage values, except differential voltage, are with respect to the zero reference level (ground) of the supply voltages where the zero reference
level is the midpoint between V
CC +
and V
CC -
.
The magnitude of the input voltage must never exceed the magnitude of the supply voltage or 15 volts, whichever is less.
Differential voltages are the non-inverting input terminal with respect to the inverting input terminal.
The output may be shorted to ground or to either supply. Temperature and/or supply voltages must be limited to ensure that the dissipation rating
is not exceeded
2/10
LF147 - LF247 - LF347
ELECTRICAL CHARACTERISTICS
V
CC
= ±15V, T
amb
= +25°C (unless otherwise specified)
Symbol
V
io
DV
io
I
io
Parameter
Input Offset Voltage (R
s
=
10kΩ)
T
amb
= 25°C
T
min
T
amb
T
max
Input Offset Voltage Drift
Input Offset Current - note
1)
T
amb
= 25°C
T
min
T
amb
T
max
Input Bias Current - note 1
T
amb
= 25°C
T
min
T
amb
T
max
Large Signal Voltage Gain (R
L
= 2kΩ, V
o
= ±10V) ,
T
amb
= 25°C
T
min
T
amb
T
max
Supply Voltage Rejection Ratio (R
S
=
10kΩ)
T
amb
= 25°C
T
min
T
amb
T
max
Supply Current, Per Amp, no Load
T
amb
= 25°C
T
min
T
amb
T
max
Input Common Mode Voltage Range
Common Mode Rejection Ratio (R
S
=
10kΩ)
T
amb
= 25°C
T
min
T
amb
T
max
Output Short-Circuit Current
T
amb
= 25°C
T
min
T
amb
T
max
Output Voltage Swing
T
amb
= 25°C
±V
opp
T
min
T
amb
T
max
R
L
= 2kΩ
R
L
= 10kΩ
R
L
= 2kΩ
R
L
= 10kΩ
±11
50
25
80
80
Min.
Typ.
3
10
5
100
4
200
20
Max.
10
13
µV/°C
pA
nA
pA
nA
V/mV
200
dB
86
mA
1.4
+15
-12
86
mA
10
10
10
12
10
12
12
40
60
60
V
12
13.5
2.7
2.7
V
dB
70
70
Unit
mV
I
ib
20
A
vd
SVR
I
CC
V
icm
CMR
I
OS
SR
t
r
K
ov
GBP
R
i
Slew Rate
V
i
= 10V, R
L
= 2kΩ, C
L
= 100pF, T
amb
= 25°C, unity gain
Rise Time
V
i
= 20mV, R
L
= 2kΩ,C
L
= 100pF, T
amb
= 25°C, unity gain
Overshoot
V
i
= 20mV, R
L
= 2kΩ, C
L
= 100pF, T
amb
= 25°C, unity gain
Gain Bandwidth Product
f =100kHz, T
amb
= 25°C, V
in
= 10mV, R
L
=2kΩ, C
L
= 100pF
Input Resistance
V/µs
16
µs
0.1
%
10
MHz
2.5
4
10
12
%
THD
Total Harmonic Distortion
f =1kHz, A
v
= 20dB, R
L
= 2kΩ, C
L
= 100pF
T
amb
= 25°C, V
O
= 2Vpp
Equivalent Input Noise Voltage (R
S
=
100Ω, f = 1KHz)
0.01
15
45
120
nV
-----------
-
Hz
Degrees
dB
e
n
∅m
Phase Margin
V
o1
/V
o2
Channel Separation ( A
v
= 100)
1.
The input bias currents are junction leakage currents which approximately double for every 10°C increase in the junction temperature.
3/10
LF147 - LF247 - LF347
MAXIMUM PEAK-TO-PEAK OUTPUT
VOLTAGE versus FREQUENCY
MAXIMUM PEAK-TO-PEAK OUTPUT
VOLTAGE versus FREQUENCY
MAXIMUM PEAK-TO-PEAK OUTPUT
VOLTAGE versus FREQUENCY
MAXIMUM PEAK-TO-PEAK OUTPUT
VOLTAGE versus FREE AIR TEMP.
MAXIMUM PEAK-TO-PEAK OUTPUT
VOLTAGE versus LOAD RESISTANCE
MAXIMUM PEAK-TO-PEAK OUTPUT
VOLTAGE versus SUPPLY VOLTAGE
MAXIMUM PEAK-TO-PEAK OUTPUT
VOLTAGE (V)
30
25
R
L
= 10 kΩ
T
amb
= +25˚C
20
15
10
5
0
2
12
SUPPLY VOLTAGE ( V)
4
6
8
10
14
16
4/10
LF147 - LF247 - LF347
INPUT BIAS CURRENT versus FREE AIR
TEMPERATURE
LARGE SIGNAL DIFFERENTIAL VOLTAGE
AMPLIFICATION AND PHASE SHIFT versus
FREQUENCY
100
V
CC
=
INPUT BIAS CURRENT (nA)
10
1
0.1
15V
DIFFERENTIAL VOLTAGE
AMPLIFICATION (V/V)
1000
400
200
100
40
20
10
4
2
1
-75
V
CC
= 15V
V
O
= 10V
R
L
= 2k
-50
0.01
-50
-25
0
25
50
75
100
125
-25
0
25
50
75
100
125
TEMPERATURE (˚C)
TEMPERATURE (˚C)
LARGE SIGNAL DIFFERENTIAL VOLTAGE
AMPLIFICATION AND PHASE SHIFT versus
FREQUENCY
TOTAL POWER DISSIPATION versus FREE AIR
TEMPERATURE
PHASE SHIFT
(right scale)
DIFFERENTIAL
VOLTAGE
AMPLIFICATION
(left scale)
180
10
1
100
R = 2kW
L
C
L
= 100pF
V
CC
= 15V
T
amb
= +125°C
1K
10K
100K
1M
10M
FREQUENCY (Hz)
90
0
TOTAL POWER DISSIPATION (mW)
100
250
225
200
175
150
125
100
75
50
25
0
-75
-50
-25
0
25
50
TEMPERATURE (˚C)
DIFFERENTIAL VOLTAGE
AMPLIFICATION (V/V)
V
CC
= 15V
No signal
No load
75
100
125
SUPPLY CURRENT PER AMPLIFIER versus
FREE AIR TEMPERATURE
COMMON MODE REJECTION RATIO versus
FREE AIR TEMPERATURE
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
-75
-50
-25
0
25
50
TEMPERATURE (˚C)
SUPPLY CURRENT (mA)
SUPPLY CURRENT (mA)
V
CC
= 15V
No signal
No load
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
T
amb
= +25°C
No signal
No load
75
100
125
0
2
4
6
8
10
12
14
16
SUPPLY VOLTAGE (V)
5/10
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参数对比
与LF347N相近的元器件有:LF347D。描述及对比如下:
型号 LF347N LF347D
描述 Operational Amplifiers - Op Amps Quad Wideband JFET Operational Amplifiers - Op Amps Dual Low Noise JFET
Brand Name STMicroelectronics STMicroelectronics
是否Rohs认证 符合 符合
厂商名称 ST(意法半导体) ST(意法半导体)
零件包装代码 DIP SOIC
包装说明 DIP, DIP14,.3 SOP, SOP14,.25
针数 14 14
Reach Compliance Code unknown compliant
ECCN代码 EAR99 EAR99
Factory Lead Time 16 weeks 25 weeks
放大器类型 OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
架构 VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB) 0.02 µA 0.02 µA
25C 时的最大偏置电流 (IIB) 0.0002 µA 0.0002 µA
标称共模抑制比 86 dB 86 dB
频率补偿 YES YES
最大输入失调电流 (IIO) 0.004 µA 0.004 µA
最大输入失调电压 13000 µV 13000 µV
JESD-30 代码 R-PDIP-T14 R-PDSO-G14
JESD-609代码 e4 e4
低-偏置 YES YES
低-失调 NO NO
负供电电压上限 -18 V -18 V
标称负供电电压 (Vsup) -15 V -15 V
功能数量 4 4
端子数量 14 14
最高工作温度 70 °C 70 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 DIP SOP
封装等效代码 DIP14,.3 SOP14,.25
封装形状 RECTANGULAR RECTANGULAR
封装形式 IN-LINE SMALL OUTLINE
峰值回流温度(摄氏度) NOT SPECIFIED 260
电源 +-15 V +-15 V
认证状态 Not Qualified Not Qualified
座面最大高度 5.1 mm 1.75 mm
最小摆率 12 V/us 12 V/us
标称压摆率 16 V/us 16 V/us
最大压摆率 10.8 mA 10.8 mA
供电电压上限 18 V 18 V
标称供电电压 (Vsup) 15 V 15 V
表面贴装 NO YES
技术 BIPOLAR BIPOLAR
温度等级 COMMERCIAL COMMERCIAL
端子面层 Nickel/Palladium/Gold (Ni/Pd/Au) Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式 THROUGH-HOLE GULL WING
端子节距 2.54 mm 1.27 mm
端子位置 DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED 40
标称均一增益带宽 4000 kHz 4000 kHz
最小电压增益 25000 25000
宽度 7.62 mm 3.9 mm
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