型号
- 型号
- 关键词
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-8, 2 PIN
厂商名称：Mitsubishi(日本三菱)
厂商官网：http://www.mitsubishielectric.com/semiconductors/
下载文档| 型号 | MGFC36V5964-51 | MGFC36V5964-01 |
|---|---|---|
| 描述 | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-8, 2 PIN | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-8, 2 PIN |
| 厂商名称 | Mitsubishi(日本三菱) | Mitsubishi(日本三菱) |
| 包装说明 | FLANGE MOUNT, R-CDFM-F2 | FLANGE MOUNT, R-CDFM-F2 |
| 针数 | 2 | 2 |
| Reach Compliance Code | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 |
| 外壳连接 | SOURCE | SOURCE |
| 配置 | SINGLE | SINGLE |
| 最大漏极电流 (ID) | 2.8 A | 2.8 A |
| FET 技术 | JUNCTION | JUNCTION |
| 最高频带 | C BAND | C BAND |
| JESD-30 代码 | R-CDFM-F2 | R-CDFM-F2 |
| 元件数量 | 1 | 1 |
| 端子数量 | 2 | 2 |
| 工作模式 | DEPLETION MODE | DEPLETION MODE |
| 最高工作温度 | 175 °C | 175 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL |
| 功耗环境最大值 | 25 W | 25 W |
| 最小功率增益 (Gp) | 9 dB | 9 dB |
| 认证状态 | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES |
| 端子形式 | FLAT | FLAT |
| 端子位置 | DUAL | DUAL |
| 晶体管应用 | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | GALLIUM ARSENIDE | GALLIUM ARSENIDE |