PN200 / MMBT200 / PN200A / MMBT200A
Discrete POWER & Signal
Technologies
PN200
PN200A
MMBT200
MMBT200A
C
E
C
B
TO-92
E
SOT-23
Mark: N2 / N2A
B
PNP General Purpose Amplifier
This device is designed for general purpose amplifier applications
at collector currents to 300 mA. Sourced from Process 68.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Collector-Emitter Voltage
Value
45
75
6.0
500
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
PN200A
625
5.0
83.3
200
Max
*MMBT200A
350
2.8
357
Units
mW
mW/°C
°C/W
°C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
©
1997 Fairchild Semiconductor Corporation
PN200 / MMBT200 / PN200A / MMBT200A
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CES
I
EBO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage*
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
I
C
= 10
µA,
I
B
= 0
I
C
= 1.0 mA, I
E
= 0
I
E
= 10
µA,
I
C
= 0
V
CB
= 50 V, I
E
= 0
V
CE
= 40 V, I
E
= 10
V
EB
= 4.0 V, I
C
= 0
60
45
6.0
50
50
50
V
V
V
nA
nA
nA
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 100
µA,
V
CE
= 1.0 V
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 100 mA, V
CE
= 1.0 V*
I
C
= 150 mA, V
CE
= 5.0 V*
V
CE(
sat
)
V
BE(
sat
)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 200 mA, I
B
= 20 mA*
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 200 mA, I
B
= 20 mA*
200
200A
200
200A
200A
200
200A
80
240
100
300
100
100
100
450
600
350
0.2
0.4
0.85
1.0
V
V
V
V
SMALL SIGNAL CHARACTERISTICS
f
T
C
obo
NF
Current Gain - Bandwidth Product
Output Capacitance
Noise Figure
V
CE
= 20 V, I
C
= 20 mA
V
CB
= 10 V, f = 1.0 MHz
I
C
= 100
µA,
V
CE
= 5.0 V,
R
G
= 2.0 kΩ, f = 1.0 kHz
200
200A
250
6.0
5.0
4.0
MHz
pF
dB
dB
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
500
V
CE
= 5V
V
CESAT
- COLLECTOR EMITTER VOLTAGE (V)
h
FE
- TYPICAL PULSED CURRENT GAIN
Collector-Emitter Saturation
Voltage vs Collector Current
0.3
0.25
0.2
0.15
25 °C
400
300
125 °C
β
= 10
25 °C
200
100
0
0.01
- 40 °C
0.1
0.05
0
0.1
125 ºC
- 40 ºC
0.1
1
10
100
I
C
- COLLECTOR CURRENT (mA)
1
10
100
I
C
- COLLECTOR CURRENT (mA)
P 68
300
PN200 / MMBT200 / PN200A / MMBT200A
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
1.2
1
0.8
0.6
0.4
0.2
0
0.1
V
BEON
- BASE EMITTER ON VOLTAGE (V)
V
BESAT
- BASE EMITTER VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
β
= 10
Base Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
0
0.1
V
CE
= 5V
- 40 ºC
25 °C
125 ºC
- 40 ºC
25 °C
125 ºC
1
10
100
I
C
- COLLECTOR CURRENT (mA)
300
1
10
I
C
- COLLECTOR CURRENT (mA)
100 200
Collector-Cutoff Current
vs. Ambient Temperature
I
CBO
- COLLECTOR CURRENT (nA)
V
CB
= 50V
10
BV
CER
- BREAKDOWN VOLTAGE (V)
100
Collector-Emitter Breakdown
Voltage with Resistance
Between Emitter-Base
95
90
1
85
80
0.1
75
0.01
25
50
75
100
T
A
- AMBIENT TEMPERATURE ( º C)
125
70
0.1
1
10
100
1000
RESISTANCE (k
Ω
)
V
CE
- COLLECTOR-EMITTER VOLTAGE (V)
Collector Saturation Region
4
Input and Output Capacitance
vs Reverse Voltage
100
Ta = 25°C
3
f = 1.0 MHz
2
Ic =
100 uA
CAPACITANCE (pF)
50 mA
300 mA
10
Cib
Cob
1
0
100
300
700
2000 4000
0.1
1
10
100
I
B
- BASE CURRENT (uA)
V
ce
- COLLECTOR VOLTAGE(V)
PN200 / MMBT200 / PN200A / MMBT200A
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
f
T
- GAIN BANDWIDTH PRODUCT (MHz)
Gain Bandwidth Product
vs Collector Current
40
Switching Times vs
Collector Current
300
270
240
210
TIME (nS)
180
150
120
90
60
30
0
10
td
tf
tr
IB1 = IB2 = Ic / 10
V
cc
= 10 V
Vce = 5V
30
ts
20
10
0
1
10
P 68
20
50
100 150
I
C
- COLLECTOR CURRENT (mA)
20
30
50
100
200
I
C
- COLLECTOR CURRENT (mA)
300
Power Dissipation vs
Ambient Temperature
700
P
D
- POWER DISSIPATION (mW)
600
500
400
300
200
100
0
0
25
50
75
100
TEMPERATURE (
o
C)
125
150
SOT-23
TO-92
