MMBT3646
MMBT3646
Switching Transistor
3
2
SOT-23
Mark: 23
1. Base 2. Emitter 3. Collector
1
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
P
D
T
J
, T
STG
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
Total Device Dissipation
- Derate above 25°C
- Continuous
@ T
A
=25°C
Parameter
Value
15
40
40
5
300
625
5
150
mA
mW
mW/°C
°C
Units
V
V
V
Operating and Storage Junction Temperature Range
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
Off Characteristics
V
(BR)CES
V
CEO(
SUS
)
V
(BR)CBO
V
(BR)EBO
I
CES
Parameter
Min.
40
15
40
5
0.5
3
30
25
15
120
Typ.
Max.
Units
V
V
V
V
µA
Collector-Emitter Breakdown Voltage (I
C
= 100µAdc, V
BE
= 0)
Collector-Emitter Sustaining Voltage (1) (I
C
= 10mAdc, I
B
= 0)
Collector-Base Breakdown Voltage (I
C
= 100µAdc, I
E
= 0)
Emitter-Base Breakdown Voltage (I
E
= 100µAdc, I
C
= 0)
Collector Cut-off Current (V
CE
= 20Vdc, V
BE
= 0)
(V
CE
= 20Vdc, V
BE
= 0, T
A
= 65°C)
DC Current Gain (I
C
= 30mAdc, V
CE
= 0.4Vdc)
(I
C
= 100mAdc, V
CE
= 0.5Vdc)
(I
C
= 300mAdc, V
CE
= 1Vdc)
Collector-Emitter Saturation Voltage (I
C
= 30mAdc, I
B
= 3mAdc)
(I
C
= 100mAdc, I
B
= 10mAdc)
(I
C
= 300mAdc, I
B
= 30mAdc)
(I
C
= 30mA, I
B
= 3mA, T
A
=65°C)
Base-Emitter Saturation Voltage (I
C
= 30mAdc, I
B
= 3mAdc)
(I
C
= 100mAdc, I
B
= 10mAdc)
(I
C
= 300mAdc, I
B
= 30mAdc)
0.73
On Characteristics (1)
h
FE
V
CE(sat)
0.2
0.28
0.5
0.3
0.95
1.2
1.7
V
V
BE(sat)
V
©2001 Fairchild Semiconductor Corporation
Rev. A, August 2001
MMBT3646
Electrical Characteristics
T
C
=25°C unless otherwise noted) (Continued)
Symbol
Small-Signal Characteristics
C
obo
C
ibo
Parameter
Min.
Typ.
Max.
5
8
Units
pF
pF
Output Capacitance
(V
CE
= 5Vdc, I
E
= 0, f = 1MHz)
Input Capacitance
(V
EB
= 0.5Vdc, I
C
= 0, f = 1MHz)
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Fall Time
Storge Time
V
CC
= 10Vdc, I
C
= 300mAdc,
I
B1
= I
B2
= 30mAdc
V
CC
= 10Vdc, I
C
= 300mAdc,
I
B1
= 30mAdc, V
CE(off)
= 3V
Switching Characteristics
t
on
t
d
t
r
t
off
t
f
t
s
18
10
15
28
15
20
ns
ns
ns
ns
ns
ns
Thermal Characteristics
Symbol
R
θJA
R
θJC
Parameter
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Min.
Typ.
Max.
200
83.3
Units
°C
°C
©2001 Fairchild Semiconductor Corporation
Rev. A, August 2001
MMBT3646
Package Demensions
SOT-23
0.20 MIN
2.40
±0.10
0.40
±0.03
1.30
±0.10
0.45~0.60
0.03~0.10
0.38 REF
0.40
±0.03
0.96~1.14
2.90
±0.10
0.12
–0.023
+0.05
0.95
±0.03
0.95
±0.03
1.90
±0.03
0.508REF
0.97REF
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A, August 2001
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E
2
CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FAST
®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER
®
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
UltraFET
®
VCX™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2001 Fairchild Semiconductor Corporation
Rev. H4