MMBT4400D87Z,MMBT4400D87Z pdf中文资料,MMBT4400D87Z引脚图,MMBT4400D87Z电路-Datasheet-电子工程世界

器件参数

参数名称

属性值

厂商名称

Fairchild

包装说明

SMALL OUTLINE, R-PDSO-G3

Reach Compliance Code

unknown

ECCN代码

EAR99

最大集电极电流 (IC)

0.6 A

集电极-发射极最大电压

40 V

配置

SINGLE

最小直流电流增益 (hFE)

JESD-30 代码

R-PDSO-G3

元件数量

端子数量

最高工作温度

150 °C

封装主体材料

PLASTIC/EPOXY

封装形状

RECTANGULAR

封装形式

SMALL OUTLINE

极性/信道类型

NPN

认证状态

Not Qualified

表面贴装

YES

端子形式

GULL WING

端子位置

DUAL

晶体管应用

SWITCHING

晶体管元件材料

SILICON

最大关闭时间（toff）

255 ns

最大开启时间（吨）

35 ns

参数对比

与MMBT4400D87Z相近的元器件有：2N4400D27Z、2N4400D74Z、2N4400D26Z、2N4400D75Z、2N4400H1TF、2N4400J05Z、2N4400J18Z、2N4400H1TA。描述及对比如下：

型号	MMBT4400D87Z	2N4400D27Z	2N4400D74Z	2N4400D26Z	2N4400D75Z	2N4400H1TF	2N4400J05Z	2N4400J18Z	2N4400H1TA
描述	Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon	Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92	Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92	Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92	Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92	Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92	Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN	Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN	Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
包装说明	SMALL OUTLINE, R-PDSO-G3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown	unknow	unknow	unknow	unknow	unknow	unknow	unknow	unknow
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
最大集电极电流 (IC)	0.6 A	0.6 A	0.6 A	0.6 A	0.6 A	0.6 A	0.6 A	0.6 A	0.6 A
集电极-发射极最大电压	40 V	40 V	40 V	40 V	40 V	40 V	40 V	40 V	40 V
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
最小直流电流增益 (hFE)	20	20	20	20	20	20	20	20	20
JESD-30 代码	R-PDSO-G3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
元件数量	1	1	1	1	1	1	1	1	1
端子数量	3	3	3	3	3	3	3	3	3
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
封装形式	SMALL OUTLINE	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
极性/信道类型	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	NO	NO	NO	NO	NO	NO	NO	NO
端子形式	GULL WING	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子位置	DUAL	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
最大关闭时间（toff）	255 ns	255 ns	255 ns	255 ns	255 ns	255 ns	255 ns	255 ns	255 ns
最大开启时间（吨）	35 ns	35 ns	35 ns	35 ns	35 ns	35 ns	35 ns	35 ns	35 ns
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	-	150 °C	150 °C	-
JEDEC-95代码	-	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92
Base Number Matches	-	1	1	1	1	1	1	1	-