MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF3010/D
The RF MOSFET Line
RF Power
Field Effect Transistor
MRF3010
10 W, 1.6 GHz, 28 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
N–Channel Enhancement–Mode Lateral
MOSFET
Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,
CW amplifier applications.
D
•
Guaranteed Performance @ 1.6 GHz, 28 Volts
Output Power = 10 Watts
Minimum Gain = 9.5 dB @ 10 Watts
Minimum Efficiency = 45% @ 10 Watts
•
High Gain, Rugged Device
•
Bottom Side Source Eliminates DC Isolators,
Reducing Common Mode Inductances
•
Broadband Performance of This Device Makes It
Ideal for Applications from 800 to 1700 MHz,
Common–Source Class AB Operation.
•
Typical Performance at Class A Operation:
Pout = 2 Watts, VDD = 28 Volts, IDQ = 1 A,
Gain = 12.5 dB, IMD = –32 dB
•
Capable of Handling 30:1 VSWR, @ 28 Vdc
•
Circuit Board Available Upon Request by Contacting RF Tactical Marketing
in Phoenix, AZ
G
CASE 360B–01, STYLE 1
S
•
Characterized with Small–Signal S–Parameters from 500 to 2500 MHz
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Storage Temperature Range
Operating Junction Temperature
Symbol
VDSS
VGS
Tstg
TJ
Value
65
±
20
– 65 to +150
200
Unit
Vdc
Vdc
°C
°C
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 1
µA)
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0)
Gate–Source Leakage Current
(VGS = 20 V, VDS = 0)
V(BR)DSS
IDSS
IGSS
65
–
–
–
–
–
–
10
1
Vdc
µAdc
µAdc
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
©
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1998
MRF3010
1
ELECTRICAL CHARACTERISTICS – continued
(TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 V, ID = 50 mA)
Drain–Source On–Voltage
(VGS = 10 V, ID = 1 A)
Forward Transconductance
(VDS = 10 V, ID = 1 A)
VGS(th)
VDS(on)
gfs
2
–
0.35
2.5
1.5
0.55
5
–
–
Vdc
Vdc
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 28 V, VGS = 0, f = 1 MHz)
Output Capacitance
(VDS = 28 V, VGS = 0, f = 1 MHz)
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0, f = 1 MHz)
Ciss
Coss
Crss
–
–
–
15
9
0.7
–
–
–
pF
pF
pF
FUNCTIONAL CHARACTERISTICS
Common Source Power Gain
(VDD = 28 Vdc, Pout = 10 W, IDQ = 50 mA, f = 1.6 GHz)
Drain Efficiency
(VDD = 28 Vdc, Pout = 10 W, IDQ = 50 mA, f = 1.6 GHz)
Output Mismatch Stress
(VDS = 28 Vdc, Pout = 10 W, IDQ = 50 mA, f = 1600 MHz,
Load VSWR 30:1 at All Phase Angles)
Series Equivalent Input Impedance
(VDD = 28 Vdc, Pout = 10 W, IDQ = 50 mA, f = 1.6 GHz)
Series Equivalent Output Impedance
(VDD = 28 Vdc, Pout = 10 W, IDQ = 50 mA, f = 1.6 GHz)
Gps
η
9.5
45
10.5
50
–
–
dB
%
Ψ
Zin
Zol
–
–
No Degradation in Output Power
3.1+j7.18
6.16–j4.75
–
–
Ω
Ω
L1
VGG
INPUT
R1
C4
C5
R2
C6
L2
C9
C10
C11
L3
+
R3
R4
C13
VDD
INPUT
RF
INPUT
Z1
C1
C2
Z2
Z3
DUT
C3
Z4
Z5
Z6
C12
RF
OUTPUT
C7
C8
C1, C6, C10, C12
C2, C3, C7, C8
C4, C11
C5, C9
C13
L1
L2
L3
R1
24 pF, “A” Chip Capacitor, ATC
0.8–8.0 pF, Variable Capacitor, Johansen Gigatrim
240 pF, “A” Chip Capacitor, ATC
0.1
µF,
Ceramic Capacitor
50
µF,
50 V, Electrolytic Capacitor
Ferroxcube VK200–19/4B
2 Turns, 0.175′′ ID, 20 AWG, Close Wound
10 Turns, 20 AWG, Close Wound
1 kΩ, 1/4 W Resistor
R2
R3
R4
Z1
Z2
Z3
Z4
Z5
Z6
220
Ω,
1/4 W Resistor
10 kΩ, 2 W Resistor
10 kΩ, 1/8 W Resistor
0.081′′ x 0.42′′ Microstrip
0.081′′ x 1.24′′ Microstrip
0.32′′ x 0.48′′ Microstrip
0.35′′ x 0.5′′ Microstrip
0.15′′ x 0.44′′ Microstrip
0.081′′ x 1.165′′ Microstrip
Figure 1. 1.6 GHz Test Circuit Schematic
MRF3010
2
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
14
14
Pout , OUTPUT POWER (WATTS)
12
10
8
6
4
2
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
Pin, INPUT POWER (Watts)
VDS = 28 Vdc
IDQ = 50 mA
f = 1.6 GHz
Pout , OUTPUT POWER (WATTS)
f = 1.64 GHz
12
10
8
6
4
2
0
13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28
VDS, DRAIN VOLTAGE (V)
0.5 W
0.25 W
VDS = 28 Vdc
IDQ = 50 mA
f = 1.6 GHz
Pin = 1 W
0.75 W
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Drain Voltage
100
Ciss
C, CAPACITANCE (pF)
10
Coss
1.0
Crss
0.1
0
5
10
15
20
25
30
VDS, DRAIN SOURCE VOLTAGE (V)
Figure 4. Capacitance versus Drain Voltage
MOTOROLA RF DEVICE DATA
MRF3010
3
f
MHz
500
510
520
530
540
550
600
650
700
750
800
820
840
860
880
900
920
940
960
980
1000
1010
1020
1030
1040
1050
1060
1070
1080
1090
1100
1120
1140
1160
1180
1200
1220
1240
1260
1280
1300
S11
|S11|
0.806
0.805
0.803
0.805
0.803
0.806
0.818
0.822
0.832
0.838
0.843
0.847
0.852
0.855
0.858
0.859
0.860
0.865
0.874
0.876
0.876
0.877
0.877
0.875
0.878
0.877
0.884
0.882
0.887
0.886
0.888
0.889
0.888
0.892
0.895
0.898
0.906
0.905
0.904
0.902
0.906
∠φ
–164
–164
–165
–165
–166
–166
–169
–171
–174
–175
–178
–179
–179
180
179
179
178
177
176
175
175
174
174
174
173
173
173
172
172
171
171
170
170
169
168
167
167
166
165
164
163
|S21|
4.98
4.87
4.75
4.66
4.55
4.45
4.00
3.64
3.35
3.06
2.84
2.74
2.67
2.59
2.52
2.46
2.39
2.34
2.29
2.22
2.16
2.13
2.11
2.08
2.06
2.03
2.01
1.99
1.96
1.94
1.92
1.88
1.84
1.80
1.77
1.73
1.70
1.67
1.64
1.60
1.55
S21
∠φ
54
53
52
52
51
50
45
41
38
34
30
29
27
26
25
24
22
21
19
18
16
16
16
15
15
14
13
13
12
12
11
10
8
7
6
5
4
2
1
0
–1
|S12|
0.026
0.024
0.024
0.023
0.023
0.023
0.021
0.018
0.017
0.014
0.012
0.011
0.008
0.009
0.006
0.004
0.006
0.009
0.011
0.010
0.010
0.009
0.008
0.008
0.009
0.010
0.009
0.009
0.008
0.009
0.010
0.010
0.013
0.014
0.014
0.015
0.017
0.017
0.018
0.019
0.021
S12
∠φ
–18
–18
–20
–20
–21
–22
–27
–20
–28
–32
–23
–21
–27
–17
–16
–6
24
34
25
21
25
21
26
28
28
40
38
52
54
51
44
56
56
60
62
62
68
66
63
56
55
|S22|
0.598
0.604
0.610
0.619
0.623
0.628
0.646
0.663
0.683
0.704
0.722
0.724
0.725
0.732
0.741
0.752
0.758
0.777
0.790
0.780
0.782
0.782
0.786
0.788
0.791
0.795
0.793
0.795
0.796
0.803
0.803
0.809
0.817
0.826
0.836
0.841
0.847
0.849
0.862
0.861
0.867
S22
∠φ
–125
–126
–127
–128
–128
–129
–132
–135
–138
–141
–143
–144
–145
–146
–147
–147
–147
–148
–150
–152
–152
–153
–153
–153
–153
–154
–154
–154
–155
–155
–156
–156
–157
–157
–158
–159
–160
–161
–162
–163
–163
Table 1. Common Source S–Parameters (VDS = 28 V, ID = 750 mA)
MRF3010
4
MOTOROLA RF DEVICE DATA
f
MHz
1320
1340
1360
1380
1400
1420
1440
1460
1480
1500
1520
1540
1560
1570
1580
1590
1600
1610
1620
1630
1640
1650
1660
1670
1680
1690
1700
1750
1800
1850
1900
1950
2000
2050
2100
2150
2200
2250
2300
2350
2400
2500
S11
|S11|
0.901
0.906
0.907
0.905
0.901
0.900
0.903
0.912
0.905
0.910
0.903
0.899
0.902
0.902
0.906
0.906
0.909
0.911
0.912
0.907
0.905
0.895
0.893
0.890
0.894
0.899
0.899
0.905
0.887
0.893
0.888
0.883
0.887
0.875
0.885
0.882
0.865
0.875
0.864
0.857
0.849
0.841
∠φ
162
162
161
161
160
159
158
158
161
156
156
155
154
153
153
153
152
152
152
151
151
150
150
150
149
148
148
147
144
142
141
138
135
134
130
128
125
121
118
114
111
102
|S21|
1.52
1.49
1.47
1.44
1.42
1.39
1.37
1.34
1.44
1.30
1.27
1.26
1.24
1.22
1.22
1.21
1.20
1.20
1.19
1.18
1.17
1.16
1.15
1.14
1.13
1.12
1.12
1.09
1.06
1.03
1.00
0.99
0.97
0.94
0.93
0.93
0.91
0.90
0.89
0.88
0.87
0.86
S21
∠φ
–2
–3
–4
–5
–7
–7
–9
–10
–5
–11
–12
–13
–15
–15
–16
–16
–17
–17
–17
–18
–18
–18
–19
–19
–20
–20
–21
–24
–26
–28
–31
–34
–36
–38
–42
–45
–47
–50
–54
–56
–59
–66
|S12|
0.018
0.021
0.022
0.022
0.021
0.022
0.022
0.021
0.022
0.024
0.023
0.025
0.026
0.026
0.024
0.025
0.026
0.028
0.026
0.026
0.027
0.024
0.027
0.027
0.026
0.027
0.027
0.028
0.029
0.029
0.031
0.032
0.032
0.035
0.037
0.038
0.040
0.040
0.037
0.042
0.042
0.040
S12
∠φ
49
61
61
58
58
57
58
56
58
56
57
58
56
52
53
51
49
49
53
51
55
53
52
53
51
49
53
51
50
50
51
51
44
46
45
37
37
30
27
31
23
13
|S22|
0.866
0.873
0.875
0.877
0.881
0.884
0.885
0.887
0.877
0.889
0.891
0.892
0.893
0.894
0.892
0.892
0.892
0.891
0.889
0.888
0.889
0.889
0.889
0.891
0.891
0.889
0.888
0.881
0.889
0.885
0.883
0.888
0.887
0.894
0.894
0.905
0.907
0.911
0.915
0.917
0.906
0.887
S22
∠φ
–164
–165
–166
–167
–168
–168
–169
–170
–167
–171
–172
–173
–173
–174
–174
–174
–175
–175
–175
–176
–176
–177
–177
–177
–178
–178
–178
–180
179
178
176
176
174
173
172
170
169
168
165
163
162
160
Table 1. Common Source S–Parameters (VDS = 28 V, ID = 750 mA) (continued)
MOTOROLA RF DEVICE DATA
MRF3010
5
