首页 > 器件类别 > 分立半导体 > 晶体管

MT6C03AE

VHF~UHF Band Low Noise Amplifier Applications

器件类别:分立半导体    晶体管   

厂商名称:Toshiba(东芝)

厂商官网:http://toshiba-semicon-storage.com/

下载文档
器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
Toshiba(东芝)
包装说明
SUPER THIN, EXTREME SUPER MINI, ES6, 2-2N1B, 6 PIN
针数
6
Reach Compliance Code
unknow
其他特性
LOW NOISE
最大集电极电流 (IC)
0.04 A
基于收集器的最大容量
1.15 pF
集电极-发射极最大电压
5 V
配置
SEPARATE, 2 ELEMENTS
最高频带
ULTRA HIGH FREQUENCY BAND
JESD-30 代码
R-PDSO-F6
JESD-609代码
e0
元件数量
2
端子数量
6
最高工作温度
125 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
240
极性/信道类型
NPN
认证状态
Not Qualified
表面贴装
YES
端子面层
TIN LEAD
端子形式
FLAT
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
标称过渡频率 (fT)
10000 MHz
文档预览
MT6C03AE
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT6C03AE
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
Two devices are built in to the super-thin and extreme super mini (6
pins) package: ES6
Mounted Devices
Q1/Q2: SSM (TESM)
Three-pins (SSM/TESM) mold products are
corresponded.
MT3S03AS (MT3S03AT)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
(Note 1)
T
j
T
stg
Q1/Q2
10
5
2
40
10
100
125
−55~125
Unit
V
V
V
mA
mA
JEDEC
mW
°C
°C
2-2N1B
JEITA
TOSHIBA
Weight: 0.003 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total power dissipation of Q1 and Q2.
Marking
Pin Assignment
(top view)
1
2007-11-01
MT6C03AE
Electrical Characteristics Q1/Q2
(Ta
=
25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Symbol
I
CBO
I
EBO
h
FE
f
T
(1)
f
T
(2)
⎪S
21e
(1)
⎪S
21e
(2)
NF (1)
NF (2)
C
re
2
2
Test Condition
V
CB
=
5 V, I
E
=
0
V
EB
=
1 V, I
C
=
0
V
CE
=
1 V, I
C
=
5 mA
V
CE
=
1 V, I
C
=
5 mA
V
CE
=
3 V, I
C
=
10 mA
V
CE
=
1 V, I
C
=
5 mA, f
=
2 GHz
V
CE
=
3 V, I
C
=
20 mA, f
=
2 GHz
V
CE
=
1 V, I
C
=
5 mA, f
=
2 GHz
V
CE
=
3 V, I
C
=
7 mA, f
=
2 GHz
V
CB
=
1 V, I
E
=
0, f
=
1 MHz
(Note 2)
Min
80
5
7
3
Typ.
7
10
5
6.5
1.7
1.4
0.8
Max
0.1
1
160
3
2.2
1.15
Unit
μA
μA
GHz
Insertion gain
dB
Noise figure
Reverse transfer capacitance
dB
pF
Note 2: C
re
is measured by 3 terminal method with capacitance bridge.
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
2
2007-11-01
MT6C03AE
RESTRICTIONS ON PRODUCT USE
The information contained herein is subject to change without notice.
20070701-EN GENERAL
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
3
2007-11-01
查看更多>
参数对比
与MT6C03AE相近的元器件有:MT6C03AE_07。描述及对比如下:
型号 MT6C03AE MT6C03AE_07
描述 VHF~UHF Band Low Noise Amplifier Applications VHF~UHF Band Low Noise Amplifier Applications
热门器件
热门资源推荐
器件捷径:
L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ
需要登录后才可以下载。
登录取消