DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3509M04
L TO S BAND LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
FEATURES
• Super low noise figure and high associated gain
NF = 0.4 dB TYP., G
a
= 17.5 dB TYP. @ f = 2 GHz, V
DS
= 2 V, I
D
= 10 mA
• Flat-lead 4-pin thin-type super minimold (M04) package
APPLICATIONS
• Satellite radio (SDARS, DMB, etc.) antenna LNA
• GPS antenna LNA
• Low noise amplifier for microwave communication system
ORDERING INFORMATION
Part Number
NE3509M04
NE3509M04-T2
Order Number
NE3509M04-A
NE3509M04-T2-A
Package
Flat-lead 4-pin thin-
type super minimold
(M04) (Pb-Free)
Quantity
50 pcs (Non reel)
3 kpcs/reel
Marking
V80
Supplying Form
• 8 mm wide embossed taping
• Pin 1 (Source), Pin 2 (Drain) face
the perforation side of the tape
Remark
To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE3509M04
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
I
G
P
tot
Note
Ratings
4.0
−3.0
I
DSS
200
150
+150
−65
to +150
Unit
V
V
mA
μ
A
mW
°C
°C
T
ch
T
stg
Note
Mounted on 1.08 cm
2
×
1.0 mm (t) glass epoxy PCB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. PG10608EJ01V0DS (1st edition)
Date Published April 2006 NS CP(K)
Printed in Japan
2005, 2006
NE3509M04
RECOMMENDED OPERATING CONDITIONS (T
A
= +25°C)
Parameter
Drain to Source Voltage
Drain Current
Input Power
Symbol
V
DS
I
D
P
in
MIN.
−
−
−
TYP.
2
10
−
MAX.
3
20
0
Unit
V
mA
dBm
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise specified)
Parameter
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cutoff Voltage
Transconductance
Noise Figure
Associated Gain
Gain 1 dB Compression
Output Power
Symbol
I
GSO
I
DSS
V
GS (off)
g
m
NF
G
a
P
O (1 dB)
V
DS
= 2 V, I
D
= 10 mA (Non-RF),
f = 2 GHz
V
GS
=
−3
V
V
DS
= 2 V, V
GS
= 0 V
V
DS
= 2 V, I
D
= 50
μ
A
V
DS
= 2 V, I
D
= 10 mA
V
DS
= 2 V, I
D
= 10 mA, f = 2 GHz
Test Conditions
MIN.
−
30
−0.25
80
−
16
−
TYP.
0.5
45
−0.5
−
0.4
17.5
11
MAX.
10
60
−0.75
−
0.7
−
−
Unit
μ
A
mA
V
mS
dB
dB
dBm
2
Data Sheet PG10608EJ01V0DS
NE3509M04
TYPICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
250
50
Mounted on Glass Epoxy PCB
(1.08 cm
2
×
1.0 mm (t) )
45
V
DS
= 2 V
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
Total Power Dissipation P
tot
(mW)
Drain Current I
D
(mA)
200
40
35
30
25
20
15
10
5
0
–1.0
150
100
50
0
50
100
150
200
250
–0.8
–0.6
–0.4
–0.2
0
Ambient Temperature T
A
(˚C)
Gate to Source Voltage V
GS
(V)
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. FREQUENCY
2.0
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
Minimum Noise Figure NF
min
(dB)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
5
10
Frequency f (GHz)
NF
min
G
a
Associated Gain G
a
(dB)
14
12
10
8
6
4
2
0
15
Drain Current I
D
(mA)
20
V
DS
= 2 V
18
I
D
= 10 mA
16
80
V
GS
= 0 V
60
40
–0.1
V
–0.2
V
20
–0.3
V
–0.4
V
–0.5
V
0
1
2
3
4
5
Drain to Source Voltage V
DS
(V)
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. DRAIN CURRENT
2.0
MINIMUM NOISE FIGURE, ASSOCIATED GAIN
vs. DRAIN TO SOURCE VOLTAGE
2.0
Minimum Noise Figure NF
min
(dB)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
10
NF
min
Minimum Noise Figure NF
min
(dB)
G
a
Associated Gain G
a
(dB)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.0
1.5
2.0
16
14
12
10
8
6
14
12
10
8
6
4
2
20
30
0
40
NF
min
4
2
2.5
3.0
0
3.5
Drain Current I
D
(mA)
Drain to Source Voltage V
DS
(V)
Remark
The graphs indicate nominal characteristics.
Data Sheet PG10608EJ01V0DS
3
Associated Gain G
a
(dB)
20
f = 2.0 GHz
18
V
DS
= 2 V
16
1.8
f = 2.0 GHz, I
D
= 10 mA
G
a
20
18
NE3509M04
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. DRAIN CURRENT
2.0
20
MINIMUM NOISE FIGURE, ASSOCIATED GAIN
vs. DRAIN TO SOURCE VOLTAGE
2.0
20
f = 2.5 GHz, I
D
= 10 mA
18
16
14
12
10
8
6
NF
min
4
2
1.5
2.0
2.5
3.0
0
3.5
Minimum Noise Figure NF
min
(dB)
Minimum Noise Figure NF
min
(dB)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
f = 2.5 GHz, V
DS
= 2 V
G
a
18
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
Associated Gain G
a
(dB)
14
12
10
8
6
NF
min
4
2
10
20
30
0
40
G
a
0.0
1.0
Drain Current I
D
(mA)
Drain to Source Voltage V
DS
(V)
OUTPUT POWER, IM
3,
DRAIN CURRENT
vs. INPUT POWER
40
50
45
OIP
3
= +25 dBm
P
out (2 tone)
10
IIP
3
= +7.5 dBm
40
35
30
IM
3 (L)
IM
3 (H)
25
20
15
10
–60
I
D
–70
–80
–25
–20
–15
–10
–5
0
f = 2.5 GHz,
V
DS
=
2 V
I
D
= 10 mA (Non-RF)
5
10
15
5
0
30
20
Output power P
out (2 tone)
(dBm)
3rd Order Intermodulation Distortion IM
3
(dBm)
–10
–20
–30
–40
–50
Input Power P
in (2 tone)
(dBm)
Remark
The graphs indicate nominal characteristics.
4
Data Sheet PG10608EJ01V0DS
Drain Current I
D
(mA)
0
Associated Gain G
a
(dB)
16
NE3509M04
S-PARAMETERS
S-parameters/Noise parameters are provided on our web site in a form (S2P) that enables direct import to a
microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave]
→
[Device Parameters]
URL http://www.ncsd.necel.com/
Data Sheet PG10608EJ01V0DS
5
