DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP88N055CHE, NP88N055DHE, NP88N055EHE
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
These products are N-channel MOS Field Effect
Transistor designed for high current switching
applications.
ORDERING INFORMATION
PART NUMBER
NP88N055CHE
NP88N055DHE
PACKAGE
TO-220AB
TO-262
TO-263
FEATURES
•
Channel temperature 175 degree rated
•
Super low on-state resistance
R
DS(on)
= 5.3 mΩ MAX. (V
GS
= 10 V, I
D
= 44 A)
•
Low C
iss
: C
iss
= 7600 pF TYP.
•
Built-in gate protection diode
NP88N055EHE
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Note1
Drain Current (Pulse)
Note2
Total Power Dissipation (T
A
= 25°C)
Total Power Dissipation (T
C
= 25°C)
Single Avalanche Current
Note3
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
P
T
I
AS
E
AS
T
ch
T
stg
55
±20
±88
±352
1.8
288
65 / 88
422 / 15
175
–55 to +175
V
V
A
A
W
W
A
mJ
°C
°C
(TO-262)
Single Avalanche Energy
Note3
Channel Temperature
Storage Temperature
Notes 1.
Calculated constant current according to MAX. allowable channel
temperature.
2.
PW
≤
10
µ
s, Duty cycle
≤
1 %
3.
Starting T
ch
= 25°C, R
G
= 25
Ω
, V
GS
= 20 V
→
0 V (See Figure 4.)
(TO-263)
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
R
th(ch-C)
R
th(ch-A)
0.52
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D14148EJ5V0DS00 (5th edition)
Date Published March 2001 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
©
1999, 2000
NP88N055CHE, NP88N055DHE, NP88N055EHE
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Drain to Source On-state Resistance
Gate to Source Threshold Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SYMBOL
R
DS(on)
V
GS(th)
| y
fs
|
I
DSS
I
GSS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
TEST CONDITIONS
V
GS
= 10 V, I
D
= 44 A
V
DS
= V
GS
, I
D
= 250
µ
A
V
DS
= 10 V, I
D
= 44 A
V
DS
= 55 V, V
GS
= 0 V
V
GS
= ±20 V, V
DS
= 0 V
V
DS
= 25 V
V
GS
= 0 V
f = 1 MHz
I
D
= 44 A
V
GS(on)
= 10 V
V
DD
= 28 V
R
G
= 1
Ω
I
D
= 88 A
V
DD
= 44 V
V
GS
= 10 V
I
F
= 88 A, V
GS
= 0 V
I
F
= 88 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
7600
1100
480
42
26
120
32
130
31
49
1.0
62
120
2.0
30
MIN.
TYP.
4.2
3.0
60
10
±10
11400
1700
870
93
66
240
81
200
MAX.
5.3
4.0
UNIT
mΩ
V
S
µ
A
µ
A
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
V
GS
R
L
V
DD
V
DS
90 %
90 %
10 % 10 %
V
GS
Wave Form
0
10 %
V
GS(on)
90 %
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
τ
τ
= 1
µs
Duty Cycle
≤
1 %
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
2
Data Sheet D14148EJ5V0DS
NP88N055CHE, NP88N055DHE, NP88N055EHE
TYPICAL CHARACTERISTICS (T
A
= 25°C)
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
350
dT - Percentage of Rated Power - %
P
T
- Total Power Dissipation - W
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
100
80
60
40
20
0
300
250
200
150
100
50
0
0
25
50
75
100 125 150 175 200
0
25
50
75
100 125 150 175 200
T
C
- Case Temperature - ˚C
T
C
- Case Temperature - ˚C
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
Single Pulse Avalanche Energy - mJ
5
Figure3. FORWARD BIAS SAFE OPERATING AREA
1000
d
ite V)
Lim 10
)
on S
=
S(
I
D(DC)
R
D
t V
G
(a
I
D(pulse)
10
PW
800
700
600
500
422 mJ
=
I
D
- Drain Current - A
100
10
Po
Lim wer DC
ite Dis
d
sip
ms
1m
s
0
µ
s
10
µ
s
ati
on
10
400
300
200
100
0
25
15 mJ
I
AS
= 65 A
88 A
1
T
C
= 25˚C
Single Pulse
0.1
0.1
1
10
100
50
75
100
125
150
175
V
DS -
Drain to Source Voltage - V
Starting T
ch
- Starting Channel Temperature - ˚C
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1 000
r
th(t)
- Transient Thermal Resistance - ˚C/W
100
R
th(ch-A)
= 83.3˚C/W
10
1
R
th(ch-C)
= 0.52˚C/W
0.1
Single Pulse
T
C
= 25˚C
100
µ
1m
10 m
100 m
1
10
100
1 000
0.01
10
µ
PW - Pulse Width - s
Data Sheet D14148EJ5V0DS
3
NP88N055CHE, NP88N055DHE, NP88N055EHE
Figure6. FORWARD TRANSFER CHARACTERISTICS
100
Pulsed
500
I
D
- Drain Current - A
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
1
T
A
=
−25˚C
25˚C
75˚C
150˚C
175˚C
I
D
- Drain Current - A
10
400
300
200
100
V
GS
=10 V
0.1
0.01
2
3
4
5
V
DS
= 10 V
6
7
Pulsed
0
0.5
1.0
1.5
2.0
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
V
DS
- Drain to Source Voltage - V
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
Pulsed
| y
fs
| - Forward Transfer Admittance - S
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
V
DS
=10V
Pulsed
10
T
A
= 175˚C
75˚C
25˚C
−25˚C
1
5
I
D
= 44 A
0.1
0.01
0.01
0.1
0
0
T
A
= 25˚C
2
4
6
8
10
12
16
18
1
10
100
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
V
GS
- Gate to Source Voltage - V
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
4.0
V
DS
= V
GS
I
D
= 250
µ
A
15
Pulsed
V
GS(th)
- Gate to Source Threshold Voltage - V
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
10
3.0
2.0
5
V
GS
= 10 V
1.0
0
0
1
10
100
1000
−50
0
50
100
150
I
D
- Drain Current - A
T
ch
- Channel Temperature - ˚C
4
Data Sheet D14148EJ5V0DS
NP88N055CHE, NP88N055DHE, NP88N055EHE
R
DS(on)
- Drain to Source On-state Resistance - mΩ
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
9
8
7
6
5
4
3
2
1
0
- 50
0
50
100
I
D
= 44 A
150
V
GS
= 10 V
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
I
SD
- Diode Forward Current - A
Pulsed
V
GS
= 10 V
100
V
GS
= 0 V
10
1
0.1
0
0.5
1.0
1.5
T
ch
- Channel Temperature - ˚C
V
SD
- Source to Drain Voltage - V
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
C
iss
, C
oss
, C
rss
- Capacitance - pF
Figure14. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
100 000
V
GS
= 0 V
f = 1 MHz
Figure15. SWITCHING CHARACTERISTICS
1 000
t
f
t
d(off)
100
t
d(on)
10 000
C
iss
1 000
C
oss
C
rss
t
r
10
100
0.1
1
10
100
1
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
Figure16. REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1 000
t
rr
- Reverse Recovery Time - ns
di/dt = 100 A/µs
V
GS
= 0 V
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
100
V
DS
- Drain to Source Voltage - V
10
V
GS
8
V
GS
- Gate to Source Voltage - V
80
100
60
V
DD
= 44 V
6
4
10
40
20
V
DS
I
D
= 88 A
0
20
40
60
80
2
1
0.1
1.0
10
100
100 120 140 160
I
F
- Drain Current - A
Q
G
- Gate Charge - nC
Data Sheet D14148EJ5V0DS
5
RF/无线
