Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
SO
T6
PMDT670UPE
20 V, 550 mA dual P-channel Trench MOSFET
Rev. 1 — 13 September 2011
Product data sheet
1. Product profile
1.1 General description
Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat
lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
66
1.2 Features and benefits
Very fast switching
Trench MOSFET technology
ESD protection up to 2 kV
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1.
Symbol
Per transistor
V
DS
V
GS
I
D
R
DSon
drain-source voltage
gate-source voltage
drain current
drain-source on-state
resistance
V
GS
= -4.5 V; T
amb
= 25 °C
V
GS
= -4.5 V; I
D
= -400 mA; T
j
= 25 °C
[1]
Quick reference data
Parameter
Conditions
T
j
= 25 °C
Min
-
-8
-
-
Typ
-
-
-
0.67
Max
-20
8
-550
0.85
Unit
V
V
mA
Ω
Static characteristics (per transistor)
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
NXP Semiconductors
PMDT670UPE
20 V, 550 mA dual P-channel Trench MOSFET
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning information
Symbol Description
S1
G1
D2
S2
G2
D1
source TR1
gate TR1
drain TR2
source TR2
gate TR2
drain TR1
1
2
3
S1
S2
G1
G2
Simplified outline
6
5
4
Graphic symbol
D1
D2
SOT666
017aaa260
3. Ordering information
Table 3.
Ordering information
Package
Name
PMDT670UPE
-
Description
plastic surface-mounted package; 6 leads
Version
SOT666
Type number
4. Marking
Table 4.
Marking codes
Marking code
AG
Type number
PMDT670UPE
5. Limiting values
Table 5.
Symbol
Per transistor
V
DS
V
GS
I
D
I
DM
P
tot
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
V
GS
= -4.5 V; T
amb
= 25 °C
V
GS
= -4.5 V; T
amb
= 100 °C
T
amb
= 25 °C; single pulse; t
p
≤
10 µs
T
amb
= 25 °C
T
sp
= 25 °C
Per device
P
tot
T
j
T
amb
PMDT670UPE
Limiting values
Parameter
Conditions
T
j
= 25 °C
[1]
[1]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Min
-
-8
-
-
-
[2]
[1]
Max
-20
8
-550
-350
-2.2
330
390
1090
500
150
150
Unit
V
V
mA
mA
A
mW
mW
mW
mW
°C
°C
-
-
-
total power dissipation
junction temperature
ambient temperature
T
amb
= 25 °C
[2]
-
-55
-55
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 13 September 2011
2 of 16
NXP Semiconductors
PMDT670UPE
20 V, 550 mA dual P-channel Trench MOSFET
Table 5.
Symbol
T
stg
I
S
V
ESD
[1]
[2]
[3]
Limiting values
…continued
Parameter
storage temperature
source current
electrostatic discharge voltage
T
amb
= 25 °C
HBM
[1]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
Min
-65
-
-
Max
150
-370
2000
Unit
°C
mA
V
Source-drain diode
ESD maximum rating
[3]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Measured between all pins.
120
P
der
(%)
80
017aaa123
120
I
der
(%)
80
017aaa124
40
40
0
−75
−25
25
75
125
T
j
(°C)
175
0
−75
−25
25
75
125
T
j
(°C)
175
Fig 1.
Normalized total power dissipation as a
function of junction temperature
Fig 2.
Normalized continuous drain current as a
function of junction temperature
PMDT670UPE
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 13 September 2011
3 of 16
NXP Semiconductors
PMDT670UPE
20 V, 550 mA dual P-channel Trench MOSFET
–10
I
D
(A)
–1
(1)
017aaa373
Limit R
DSon
= V
DS
/I
D
–10
–1
(2)
(3)
(4)
(5)
–10
–2
–10
–1
–1
–10
V
DS
(V)
–10
2
I
DM
= single pulse
(1) t
p
= 1 ms
(2) t
p
= 10 ms
(3) DC; T
sp
= 25 °C
(4) t
p
= 100 ms
(5) DC; T
amb
= 25 °C; drain mounting pad 1 cm
2
Fig 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
6. Thermal characteristics
Table 6.
Symbol
Per device
R
th(j-a)
thermal resistance
from junction to
ambient
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
in free air
[1]
Thermal characteristics
Parameter
Conditions
Min
-
Typ
-
Max
250
Unit
K/W
Per transistor
R
th(j-a)
in free air
[1]
[2]
-
-
-
330
280
-
380
320
115
K/W
K/W
K/W
R
th(j-sp)
[1]
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm
2
.
PMDT670UPE
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 13 September 2011
4 of 16
无线连接
