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PMN48XP,125

MOSFET 20V 4.1A P-channel Trench MOSFET

器件类别:分立半导体    晶体管   

厂商名称:Nexperia

厂商官网:https://www.nexperia.com

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器件参数
参数名称
属性值
Brand Name
Nexperia
厂商名称
Nexperia
零件包装代码
TSOP
包装说明
SC-74, TSOP-6
针数
6
制造商包装代码
SOT457
Reach Compliance Code
compliant
Samacsys Description
MOSFET 20V 4.1A P-channel Trench MOSFET
配置
SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压
20 V
最大漏极电流 (ID)
4.1 A
最大漏源导通电阻
0.055 Ω
FET 技术
METAL-OXIDE SEMICONDUCTOR
JESD-30 代码
R-PDSO-G6
JESD-609代码
e3
湿度敏感等级
1
元件数量
1
端子数量
6
工作模式
ENHANCEMENT MODE
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
P-CHANNEL
参考标准
IEC-60134
表面贴装
YES
端子面层
Tin (Sn)
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
SWITCHING
晶体管元件材料
SILICON
文档预览
PMN48XP
20 V, 4.1 A P-channel Trench MOSFET
Rev. 1 — 21 April 2011
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Low R
DSon
Very fast switching
Trench MOSFET technology
1.3 Applications
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
R
DSon
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
drain-source on-state
resistance
V
GS
= -4.5 V; T
amb
= 25 °C
V
GS
= -4.5 V; I
D
= -2.4 A; T
j
= 25 °C
[1]
Conditions
T
j
= 25 °C
Min
-
-12
-
-
Typ
-
-
-
48
Max
-20
12
-4.1
55
Unit
V
V
A
mΩ
Static characteristics
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm
2
.
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning information
Symbol Description
D
D
G
S
D
D
drain
drain
gate
source
drain
drain
1
2
3
S
017aaa094
Simplified outline
6
5
4
Graphic symbol
D
G
SOT457 (TSOP6)
Nexperia
PMN48XP
20 V, 4.1 A P-channel Trench MOSFET
3. Ordering information
Table 3.
Ordering information
Package
Name
PMN48XP
TSOP6
Description
plastic surface-mounted package (TSOP6); 6 leads
Version
SOT457
Type number
4. Marking
Table 4.
PMN48XP
Marking codes
Marking code
ZV
Type number
5. Limiting values
Table 5.
Symbol
V
DS
V
GS
I
D
I
DM
P
tot
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
V
GS
= -4.5 V; T
amb
= 25 °C
V
GS
= -4.5 V; T
amb
= 100 °C
T
amb
= 25 °C; single pulse; t
p
10 µs
T
amb
= 25 °C
T
sp
= 25 °C
T
j
T
amb
T
stg
I
S
[1]
[2]
[2]
[1]
[1]
[1]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
T
j
= 25 °C
Min
-
-12
-
-
-
-
-
-
-55
-55
-65
T
amb
= 25 °C
[1]
Max
-20
12
-4.1
-2.5
-20
530
1285
6250
150
150
150
-1.4
Unit
V
V
A
A
A
mW
mW
mW
°C
°C
°C
A
junction temperature
ambient temperature
storage temperature
source current
Source-drain diode
-
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm
2
.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
PMN48XP
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 21 April 2011
2 of 15
Nexperia
PMN48XP
20 V, 4.1 A P-channel Trench MOSFET
120
P
der
(%)
80
017aaa123
120
I
der
(%)
80
017aaa124
40
40
0
−75
−25
25
75
125
T
j
(°C)
175
0
−75
−25
25
75
125
T
j
(°C)
175
Fig 1.
Normalized total power dissipation as a
function of junction temperature
Fig 2.
Normalized continuous drain current as a
function of junction temperature
PMN48XP
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 21 April 2011
3 of 15
Nexperia
PMN48XP
20 V, 4.1 A P-channel Trench MOSFET
–10
2
I
D
(A)
–10
(1)
(2)
017aaa202
Limit R
DSon
= V
DS
/I
D
–1
(3)
(4)
(5)
–10
–1
(6)
–10
–2
–10
–1
–1
–10
V
DS
(V)
–10
2
I
DM
= single pulse
(1) t
p
= 100 µs
(2) t
p
= 1 ms
(3) t
p
= 10 ms
(4) DC; T
sp
= 25 °C
(5) t
p
= 100 ms
(6) DC; T
amb
= 25 °C; drain mounting pad 6 cm
2
Fig 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
PMN48XP
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 21 April 2011
4 of 15
Nexperia
PMN48XP
20 V, 4.1 A P-channel Trench MOSFET
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
Conditions
in free air
[1]
[2]
Min
-
-
-
Typ
204
84
17
Max
235
97
20
Unit
K/W
K/W
K/W
R
th(j-sp)
[1]
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm
2
.
10
3
Z
th(j-a)
(K/W)
10
2
017aaa203
duty cycle = 1
0.75
0.5
0.25
0.1
0.05
0.33
0.2
10
0.02
0
1
10
–3
0.01
10
–2
10
–1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 4.
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle = 1
0.75
0.5
0.25
10
0.1
0.33
0.2
0.05
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa204
0
1
10
–3
0.02
0.01
10
–2
10
–1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for drain 6 cm
2
Fig 5.
PMN48XP
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 21 April 2011
5 of 15
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参数对比
与PMN48XP,125相近的元器件有:PMN48XP,115。描述及对比如下:
型号 PMN48XP,125 PMN48XP,115
描述 MOSFET 20V 4.1A P-channel Trench MOSFET MOSFET P-CH -20 V -4.1 A
Brand Name Nexperia Nexperia
厂商名称 Nexperia Nexperia
零件包装代码 TSOP TSOP
包装说明 SC-74, TSOP-6 SC-74, TSOP-6
针数 6 6
制造商包装代码 SOT457 SOT457
Reach Compliance Code compliant compliant
配置 SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压 20 V 20 V
最大漏极电流 (ID) 4.1 A 4.1 A
最大漏源导通电阻 0.055 Ω 0.055 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 代码 R-PDSO-G6 R-PDSO-G6
JESD-609代码 e3 e3
湿度敏感等级 1 1
元件数量 1 1
端子数量 6 6
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED
极性/信道类型 P-CHANNEL P-CHANNEL
参考标准 IEC-60134 IEC-60134
表面贴装 YES YES
端子面层 Tin (Sn) Tin (Sn)
端子形式 GULL WING GULL WING
端子位置 DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED
晶体管应用 SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON
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