PSMN004-36P/36B
N-channel enhancement mode field-effect transistor
Rev. 01 — 19 November 2001
Product data
1. Description
N-channel logic level field-effect power transistor in a plastic package using
TrenchMOS™
1
technology.
Product availability:
PSMN004-36P in SOT78 (TO-220AB)
PSMN004-36B in SOT404 (D
2
-PAK).
2. Features
s
Very low on-state resistance
s
Fast switching.
3. Applications
s
DC to DC converters
s
Switch mode power supplies.
4. Pinning information
Table 1:
Pin
1
2
3
mb
Pinning - SOT78 and SOT404, simplified outline and symbol
Description
gate (g)
drain (d)
source (s)
drain (d)
g
s
Simplified outline
[1]
mb
mb
Symbol
d
MBB076
2
1
MBK106
3
MBK116
1 2 3
SOT78 (TO-220AB)
[1]
SOT404 (D
2-
PAK)
It is not possible to make connection to pin 2 of the SOT404 package.
1.
TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
Philips Semiconductors
PSMN004-36P/36B
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2:
V
DS
I
D
P
tot
T
j
R
DSon
Quick reference data
Conditions
T
j
= 25 to 175
°C
T
mb
= 25
°C;
V
GS
= 5 V
T
mb
= 25
°C
V
GS
= 10 V; I
D
= 25 A; T
j
= 25°C
V
GS
= 5 V; I
D
= 25 A; T
j
= 25°C
Typ
−
−
−
−
3.5
4
Max
36
75
230
175
4
5
Unit
V
A
W
°C
mΩ
mΩ
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
Symbol Parameter
6. Limiting values
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
V
DGR
V
GS
V
GSM
I
D
I
DM
P
tot
T
stg
T
j
I
S
I
SM
E
AS
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
gate-source voltage
drain current (DC)
peak drain current
total power dissipation
storage temperature
operating junction temperature
source (diode forward) current (DC) T
mb
= 25
°C
peak source (diode forward) current T
mb
= 25
°C;
pulsed; t
p
≤
10
µs
non-repetitive avalanche energy
unclamped inductive load;
I
D
= 75 A; t
p
= 0.1 ms; V
DD
= 15 V;
R
GS
= 50
Ω;
V
GS
= 5V; starting T
j
= 25
°C;
unclamped inductive load;
V
DD
= 15 V; R
GS
= 50
Ω;
V
GS
= 5V;
starting T
j
= 25
°C
t
p
≤
50
µs;
pulsed;
duty cycle 25 %; T
j
≤
150
°C
T
mb
= 25
°C;
V
GS
= 5 V;
Figure 2
and
3
T
mb
= 100
°C;
V
GS
= 5 V;
Figure 2
T
mb
= 25
°C;
pulsed; t
p
≤
10
µs;
Figure 3
T
mb
= 25
°C;
Figure 1
Conditions
T
j
= 25 to 175
°C
T
j
= 25 to 175
°C;
R
GS
= 20 kΩ
Min
−
−
−
−
−
−
−
−
−55
−55
−
−
−
Max
36
36
±15
±20
75
75
240
230
+175
+175
75
240
120
Unit
V
V
V
V
A
A
A
W
°C
°C
A
A
mJ
Source-drain diode
Avalanche ruggedness
I
AS
non-repetitive avalanche current
−
75
A
9397 750 08621
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 — 19 November 2001
2 of 13
Philips Semiconductors
PSMN004-36P/36B
N-channel enhancement mode field-effect transistor
120
Pder
(%)
80
03aa16
03ag42
120
ID
(%)
80
40
40
0
0
50
100
150
200
o
Tmb ( C)
0
0
50
100
150
200
Tmb (ºC)
P
tot
P
der
=
----------------------
×
100%
-
P
°
tot
(
25 C
)
I
D
I
der
=
-------------------
×
100%
I
°
D
(
25 C
)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
103
03ag44
ID
(A)
102
RDS(on) = VDS/ ID
tp = 10 us
100 us
1 ms
DC
10
10 ms
100 ms
1
1
10
VDS (V)
102
T
mb
= 25
°C;
I
DM
is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 08621
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 — 19 November 2001
3 of 13
Philips Semiconductors
PSMN004-36P/36B
N-channel enhancement mode field-effect transistor
7. Thermal characteristics
Table 4:
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Conditions
Figure 4
vertical in still air; SOT78 package
mounted on a printed circuit board;
minimum footprint; SOT404 package
Value Unit
0.65
60
50
K/W
K/W
K/W
thermal resistance from junction to mounting
base
thermal resistance from junction to ambient
Symbol Parameter
7.1 Transient thermal impedance
1
03ag43
Zth
j-mb
(K/W)
10-1
δ
= 0.5
0.2
0.1
0.05
0.02
10-2
P
δ
=
tp
T
single pulse
tp
T
t
10-3
10-6
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 08621
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 — 19 November 2001
4 of 13
Philips Semiconductors
PSMN004-36P/36B
N-channel enhancement mode field-effect transistor
8. Characteristics
Table 5:
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown voltage
I
D
= 0.25 mA; V
GS
= 0 V
T
j
= 25
°C
T
j
=
−55 °C
V
GS(th)
gate-source threshold voltage
I
D
= 1 mA; V
DS
= V
GS
;
Figure 9
T
j
= 25
°C
T
j
= 175
°C
T
j
=
−55 °C
I
DSS
drain-source leakage current
V
DS
= 30 V; V
GS
= 0 V
T
j
= 25
°C
T
j
= 175
°C
I
GSS
R
DSon
gate-source leakage current
drain-source on-state resistance
V
GS
=
±10
V; V
DS
= 0 V
V
GS
= 5 V; I
D
= 25 A;
Figure 7
and
8
T
j
= 25
°C
T
j
= 175
°C
V
GS
= 4.5 V; I
D
= 25 A;
Figure 7
and
8
T
j
= 25
°C
V
GS
= 10 V; I
D
= 25 A;
Figure 7
and
8
T
j
= 25
°C
Dynamic characteristics
Q
g(tot)
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
SD
V
SD
t
rr
Q
r
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
turn-on rise time
turn-off delay time
turn-off fall time
source-drain (diode forward) voltage I
S
= 25 A; V
GS
= 0 V;
Figure 12
source-drain (diode forward) voltage I
S
= 75 A; V
GS
= 0 V;
Figure 12
reverse recovery time
recovered charge
I
S
= 20 A; dI
S
/dt =
−100
A/µs; V
GS
= 0 V
V
DD
= 15 V; R
D
= 1.2
Ω;
V
GS
= 5 V; R
G
= 6
Ω;
resistive load
V
GS
= 0 V; V
DS
= 20 V; f = 1 MHz;
Figure 11
I
D
= 75 A; V
DD
= 15 V; V
GS
= 5 V;
Figure 13
−
−
−
−
−
−
−
−
−
−
−
−
−
−
97
20
39
−
−
−
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
ns
µC
−
3.5
4
mΩ
−
−
5.4
mΩ
−
−
4
−
5
9.25
mΩ
mΩ
−
−
−
0.05
−
1
10
500
100
µA
µA
nA
1
0.5
−
1.5
−
−
2
−
2.3
V
V
V
36
32
−
−
−
−
V
V
Conditions
Min
Typ
Max
Unit
6000
−
1700
−
1400
−
45
220
435
320
0.85
1.1
400
1
−
−
−
−
1.2
−
−
−
Source-drain diode
9397 750 08621
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 — 19 November 2001
5 of 13
电源技术
