CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
PARAMETER
T
A
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
TEST CONDITIONS
I
D
= 250µA, V
GS
= 0V
V
GS
= V
DS
, I
D
= 250µA
V
DS
= 12V,
V
GS
= 0V
V
GS
=
±10V
I
D
= 7A, V
GS
= 5V
V
DD
= 6V, I
D
≅
7A,
R
L
= 0.86Ω, V
GS
=
5V,
R
GS
= 25Ω
(Figures 18, 19)
T
A
= 25
o
C
T
A
= 150
o
C
MIN
12
1
-
-
-
-
-
-
-
-
-
-
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 9.6V,
I
D
≅
7A,
R
L
= 1.37Ω
I
g(REF)
= 1.0mA
(Figures 20, 21)
-
-
-
-
-
-
Pulse Width = 1s
Device mounted on FR-4 material
-
TYP
-
-
-
-
-
-
-
50
150
120
160
-
60
35
2
1850
1600
600
-
MAX
-
2
1
50
100
0.020
250
-
-
-
-
350
75
45
2.5
-
-
-
62.5
UNITS
V
V
µA
µA
nA
Ω
ns
ns
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
o
C/W
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Ambient
I
GSS
r
DS(ON)
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Q
g(TOT)
Q
g(5)
Q
g(TH)
C
ISS
C
OSS
C
RSS
R
θJA
V
DS
= 12V, V
GS
= 0V,
f = 1MHz
(Figure 14)
Source to Drain Diode Specifications
PARAMETERS
Source to Drain Diode Voltage
Reverse Recovery Time
SYMBOL
V
SD
t
rr
I
SD
= 7A
I
SD
= 7A, dI
SD
/dt = 100A/µs
TEST CONDITIONS
MIN
-
-
TYP
-
-
MAX
1.25
95
UNITS
V
ns
2
RF1K49211
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
I
D
, DRAIN CURRENT (A)
6
0.8
8
0.6
0.4
0.2
0
0
25
50
75
100
125
o
C)
T
A
, AMBIENT TEMPERATURE (
150
4
2
0
25
75
100
125
50
o
C)
T
A
, AMBIENT TEMPERATURE (
150
FIGURE 1. NORMALIZED POWER DISSIPATION vs
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
10
Z
θ
JC
, NORMALIZED THERMAL
IMPEDANCE
1
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
0.01
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JA
x R
θ
JA
+ T
A
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
SINGLE PULSE
0.001
10
-5
10
-4
t
1
, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
100
T
J
= MAX RATED
T
A
= 25
o
C
I
DM
, PEAK CURRENT (A)
300
I
D
, DRAIN CURRENT (A)
10
5ms
10ms
1
100ms
1s
0.1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
0.01
0.1
1
DC
V
DSS
MAX = 12V
10
50
100
V
GS
= 5V
T
A
= 25
o
C FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I
=
I
25
150 - T
A
125
10 TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
t, PULSE WIDTH (s)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
3
RF1K49211
Typical Performance Curves
50
I
AS
, AVALANCHE CURRENT (A)
(Continued)
50
V
GS
= 10V
I
D
, DRAIN CURRENT (A)
40
V
GS
= 5V
V
GS
= 4V
30
V
GS
= 3V
20
STARTING T
J
= 25
o
C
10
STARTING T
J
= 150
o
C
1
0.01
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
0.1
1
10
t
AV
, TIME IN AVALANCHE (ms)
100
10
V
GS
= 2.5V
PULSE DURATION = 250µs, T
A
= 25
o
C
0
0
1
2
3
4
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
NOTE:
Refer to Harris Application Notes AN9321 and AN9322.
