RSR020P05
Pch -45V -2.0A Middle Power MOSFET
Datasheet
l
Outline
V
DSS
R
DS(on)
(Max.)
I
D
P
D
-45V
190mΩ
±2.0A
1.0W
SOT-346T
SC-96
TSMT3
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Inner circuit
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Features
1) Low on - resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT3).
4) Pb-free lead plating ; RoHS compliant
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Packaging specifications
Packing
Reel size (mm)
Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Range of storage temperature
Symbol
V
DSS
I
D
I
D,pulse*1
V
GSS
P
D*2
P
D*3
T
j
T
stg
Value
-45
±2.0
±8.0
±20
1.0
0.76
150
-55 to +150
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Application
Type
Embossed
Tape
180
8
3000
TL
ZH
Unit
V
A
A
V
W
W
℃
℃
Switching
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Absolute maximum ratings
(T
a
= 25°C ,unless otherwise specified)
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© 2015 ROHM Co., Ltd. All rights reserved.
1/11
20150903 - Rev.001
RSR020P05
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Thermal resistance
Datasheet
Parameter
Symbol
R
thJA*2
R
thJA*3
Values
Min.
-
-
Typ.
-
-
Max.
125
165
Unit
℃
/W
℃
/W
Thermal resistance, junction - ambient
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Electrical characteristics (T
a
= 25°C)
Parameter
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Gate threshold voltage
temperature coefficient
Static drain - source
on - state resistance
Gate input resistance
Forward Transfer
Admittance
Symbol
Conditions
Values
Min.
-45
-
-
-
-1.0
-
-
-
-
-
1.2
Typ.
-
-50
-
-
-
3.3
130
180
200
21
-
Max.
-
-
-1
±10
-3.0
-
190
260
280
-
-
Unit
V
(BR)DSS
V
GS
= 0V, I
D
= -1mA
Δ
V
(BR)DSS
I
D
= -1mA
ΔT
j
referenced to 25
℃
V
mV/
℃
μA
μA
V
mV/
℃
I
DSS
I
GSS
V
GS(th)
V
DS
= -45V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= -10V, I
D
= -1mA
Δ
V
GS(th)
I
D
= -1mA
ΔT
j
referenced to 25
℃
V
GS
= -10V, I
D
= -2.0A
R
DS(on)*4
V
GS
= -4.5V, I
D
= -2.0A
V
GS
= -4.0V, I
D
= -2.0A
R
G
|Y
fs
|
*4
f = 1MHz, open drain
V
DS
= -10V, I
D
= -2.0A
mΩ
Ω
S
*1 Pw
≦
10μs , Duty cycle
≦
1%
*2 Mounted on a ceramic board (30x30x0.8mm)
*3 Mounted on a FR4 (25x25x0.8mm)
*4 Pulsed
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© 2015 ROHM Co., Ltd. All rights reserved.
2/11
20150903 - Rev.001
RSR020P05
Datasheet
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Electrical characteristics
(T
a
= 25°C)
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Symbol
C
iss
C
oss
C
rss
t
d(on)*4
t
r*4
t
d(off)*4
t
f*4
Conditions
V
GS
= 0V
V
DS
= -10V
f = 1MHz
V
DD
⋍
-25V,V
GS
= -10V
Values
Min.
-
-
-
-
-
-
-
Typ.
500
80
40
8
10
35
10
Max.
-
-
-
-
-
-
-
Unit
pF
I
D
= -1.0A
R
L
⋍
25Ω
R
G
= 10Ω
ns
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Gate charge characteristics
(T
a
= 25°C)
Parameter
Total gate charge
Gate - Source charge
Gate - Drain charge
Symbol
Q
g*4
Q
gs*4
Q
gd*4
Conditions
V
GS
= -10V
Values
Min.
-
-
-
-
Typ.
9.5
4.5
1.6
1.2
Max.
-
-
-
-
Unit
V
DD
⋍
-25V
I
D
= -2.0A
V
GS
= -4.5V
nC
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Body diode electrical characteristics
(Source-Drain) (T
a
= 25°C)
Parameter
Symbol
I
S
Conditions
Values
Min.
-
Typ.
-
-
-
Max.
-0.8
-8.0
-1.2
Unit
A
A
V
Body diode continuous
forward current
Body diode
pulse current
Forward voltage
T
a
= 25
℃
I
SP*1
V
SD*4
V
GS
= 0V, I
S
= -2.0A
-
-
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© 2015 ROHM Co., Ltd. All rights reserved.
3/11
20150903 - Rev.001
RSR020P05
Datasheet
l
Electrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Fig.4 Single Pulse Maximum Power
dissipation
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© 2015 ROHM Co., Ltd. All rights reserved.
4/11
20150903 - Rev.001
RSR020P05
Datasheet
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Electrical characteristic curves
Fig.5 Typical Output Characteristics(I)
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs.
Junction Temperature
Fig.8 Typical Transfer Characteristics
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© 2015 ROHM Co., Ltd. All rights reserved.
5/11
20150903 - Rev.001
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